Datasheet APM4461KC-TR Datasheet (ANPEC)

APM4461

P-Channel Enhancement Mode MOSFET

Pin DescriptionFeatures

• -20V/-7A, R

R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SOP-8 Package

••

= 25mΩ(typ.) @ VGS = -10V

DS(ON)

= 35mΩ(typ.) @ VGS = -4.5V

DS(ON)

= 55mΩ(typ.) @ VGS = -2.5V

DS(ON)

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

APM 4461

Handling Code

Temp. Range

Package Code

Package Code
K : S O-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & R eel

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

°

APM 4461 K :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

Drain-Source Voltage -20

Gate-Source Voltage ±20

Maximum Drain Current – Continuous -7

APM 4461
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw1

APM4461

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

I

DM

P

D

T

J

T

STG

R

JA

θ

Electrical Characteristics (T

Symbol Parameter Test Condition

Maximum Drain Current – Pulsed -25 A

Maximum Power Dissipation

TA=25 ºC 2.5

T

=100 ºC 1.0

A

Maximum Junction Temperature 150 ºC

Storage Temperature Range -55 to 150 ºC

Thermal Resistance – Junction to Ambient 50

= 25°C unless otherwise noted)

A

APM4461

Min. Typ. Max.

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage VGS=0V , IDS=-250A -20 V

DSS

Zero Gate Voltage Drain Current VDS=-24V , VGS=0V -1 µA

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

-0.6 -1.5

Gate Leakage Current VGS=±20V , VDS=0V

Drain-Source On-state

a

VGS=-4.5V , IDS=-4A

Resistance

V

VGS=-10V , IDS=-7A

a

Diode Forward Voltage ISD=-2A, VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

I

DS

Turn-on Delay Time

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

V

V

V

V

Frequency=1.0MHz

=-2.5V , IDS=-2A

GS

=-10V , VGS=-4.5V,

DS

=-2A

=-10V , IDS=-2A ,

DD

=-4.5 V , RG=0.2

GEN

=0V

GS

=-15V

DS

-0.7 -1.3

Ω

25 35

35 50

55 65

17.8 21

4

5.2

10 15

15 20

32 26

15 25

1240

340

216

±

100

W

ºC/W

Unit

m

V

nA

[

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw2

APM4461

Typical Characteristics

Output Characteristics

25

20

15

10

-Drain Current (A)

D

-I

5

0

012345

-VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

-VGS=3,4,5,6,7,8,9,10V

-VGS=2V

-IDS=250µA

Transfer Characteristics

25

20

15

10

-Drain Current (A)

D

-I

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.06

0.05

TJ=125°C

-VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

TJ=25°C

TJ=-55°C

1.25

1.00

0.75

(Normalized)

-Threshold Voltage (V)

0.50

GS(th)

0.25

-V

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

0.04

0.03

-On-Resistance (Ω)

0.02

DS(ON)

R

0.01

0.00
0 5 10 15 20 25

-VGS=4.5V

-VGS=10V

-IDS-Drain Current (A)

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APM4461

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.30

-IDS=7A

0.25

0.20

0.15

-On-Resistance (Ω)

0.10

DS (ON)

0.05

R

0.00
12345678910

-V

-Gate-to-Source Voltage (V)

GSj

10

-VDS=10V

-IDS=2A

8

6

4

-Gate-to-Source Voltage (V)

2

GS

-V

0

0 5 10 15 20 25 30 35

Gate Charge

On-Resistaence vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

(Normalized)

-On Resistance (Ω)

0.8

DS(ON)

R

0.6

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

-VGS=10V
=7A

-I

DS

1800

1600

1400

1200

1000

800

600

C-Capacitance (pF)

400

200

0

0 5 10 15 20

Frequency=1MHz

Ciss

Coss

Crss

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

-VDS-Drain-to-Source Voltage (V)

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APM4461

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

25

10

1

TJ=150°C

-Source Current (A)

0.1

S

-I

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

-VSD-Source to Drain Voltage

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

60

50

40

30

Power (W)

20

10

0

0.01 0.1 1 10

30

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

0.0 1
1E-4 1E-3 0. 01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

thJA

thJA

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=50°C/W

30

APM4461

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw6

APM4461

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4461

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

P

P1

Ao

J

C

D

Bo

Ko

D1

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw8

APM4461

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : [phone]
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : [phone]
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw9