Datasheet APM4431KC-TU Datasheet (ANPEC)

APM4431

P-Channel Enhancement Mode MOSFET

Features

• -30V/-6A, R

R

••

• Super High Density Cell Design

••

• Reliable and Rugged

••

• SO-8 Package

••

= 32mΩ(typ.) @ VGS = -10V

DS(ON)

= 50mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems

Ordering and Marking Information

1

S

GD

2

3

45

8S

7

6

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 4431

Handling Code Tem p. Range Package Code

APM4431 K :

AP M4431 XXXXX

Absolute Maximum Ratings (T

Package C ode K : S O -8 Operation Junction Tem p. Range C : -5 5 to 15 0 °C Handling Code TU : T ub e TR : T ap e & R ee l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID* Maximum Drain Current – Continuous I

DM

Drain-Source Voltage -30 Gate-Source Voltage ±20

= 25°C

T

A

-6

Maximum Drain Current – Pulsed -30

V

A

* Surface Mounted o n F R4 Board , t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

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APM4431

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum Junction Temperature 150 Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q Q Q

t

d(ON)

t

d(OFF)

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID= -250µA

GS

Zero Gate Voltage Drain Current VDS= -24V, VGS=0V -1 Gate Threshold Voltage

Gate Leakage Current

Drain-Sour c e On-state Res istance

V

DS=VGS

V

GS

VGS= -10V, ID= -5.3A

b

, ID= -250µA

= ±20V , VDS=0V

VGS= -4.5V, ID= -2A

Diode Forward Voltage

SD

a

Total Gate Charge 27 35

g

Gate-Source Charge 5

gs

Gate-Drain Charge

gd

b

ISD= -2.3A, VGS=0V -0.6 -1.3 V

V

= -15V, VGS= -10V,

DS

= -3A

I

D

Turn-on Delay Time 12 22

= -15V, ID= -2A,

V

t

Turn-on Rise Time 15 22

r

Turn - off Delay Time 35 58

t

Turn-off Fall Time

f

Input Capacitance 1450

iss

Output Capacitance 225

oss

Reverse Trans fer Capacitance

rss

DD

= -10V, RG=6

V

GEN

R

=7.5

Ω

L

V

=0V, VDS=-25V

GS

Frequenc y = 1.0 MH Z

Ω

APM4431

a

Min. Typ

.

Max.

-30 V

-1 -3 V

±

32 40 50 60

4.1

15 30

150

100

°

W

C

Unit

A

µ

nA

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; puls e width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

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APM4431

Typical Characteristics

Output Characteristics

30

-VGS=5,6,7,8,9,10V

25

20

15

10

-ID-Drain Current (A)

5

0

0246810

-VDS - Drain-to-Source V oltage (V)

-VGS=4V

-VGS=3V

Transfer Characteristics

30

25

20

15

10

-ID-Drain Current (A)

5

0

012345

TJ=25°C

TJ=125°C

-V

GS - Gate-to-Source Voltage (V)

TJ=-55°C

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

-IDS=250µA

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

On-Resistance vs. Drain Current

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00 0 5 10 15 20

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

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APM4431

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.150

0.125

0.100

0.075

0.050

RDS(on)-On-Resistance (Ω)

0.025

0.000 2345678910

-VGS - Gate-to-Source Voltage (V)

-ID=5.3A

Gate Charge

10

-VD=15V

-ID=3A

8

On-Resistance vs. Junction T emperature

1.8

-VGS=10V

-ID=5.3A

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(on)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

2100

1800

1500

Capacitance

Frequency=1MHz

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25 30

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

1200

900

600

Capacitance (pF)

300

0

0 5 10 15 20 25 30

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

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APM4431

Typical Characteristics

Source-Drain Diode Forward Voltage

30

10

1

-Source Current (Α)

S

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=150°C

TJ=25°C

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedance, Junction to Ambient

Single Pulse Power

50

40

30

20

Power (W)

10

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

0.1

D= 0.05

Thermal Impedance

D= 0.02

Normalized Effective Transient

0.01

1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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30

APM4431

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0. 10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0. 020 e2 1.27B SC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

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APM4431

Physical Specifications

Terminal Material Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb ) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) Tem perat ur e m ainta ined abov e 1 83°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature

120 seconds max 60 – 150 seconds 10 –20 seconds 60 seconds 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C 6 °C /second max. 10 °C /second max. 6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg. volume < 350mm³

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APM4431

Reliability Test Program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 1 62 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM4431

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Pe r Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, T aiwan, R.O.C. T el : 886-3-5642000 Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. T el : 886-2-89191368 Fax : 886-2-89191369

12 9.3 2500

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002

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