Page 1
APM4430
N-Channel Enhancement Mode MOSFET
Features
• 30V/23A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 Package
••
=4.5mΩ(typ.) @ VGS=10V
DS(ON)
=7mΩ(typ.) @ VGS=5V
DS(ON)
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems .
Ordering and Marking Information
APM 4430
Handling Code
Temp. Range
Package Code
Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l
Pin Description
5
6
7
8
SO − 8
4
3
2
1
APM 4430 K :
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 23
Maximum Drain Current – Pulsed ± 60
APM 4430
XXXXX
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
Parameter Rating Unit
V
A
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Page 2
APM4430
Absolute Maximum Ratings (T
Symbol
Parameter Rating Unit
= 25°C unless otherwise noted)
A
TA = 25°C 1.6
P
D
T
J
T
STG
R
thJA
Maximum Power Dissipation*
T
= 70°C 0.625
A
Maximum Junction Te mperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter Test Condition
Static
BV
V
I
R
V
DSS
I
DSS
GS(th)
GSS
DS(ON)
SD
Drain-Source Breakdown
Zero Gate Voltage Drain Current
=0V, ID=250µA
V
GS
VDS=24V, VGS=0V 1
VDS =24V, VGS =0V, T j = 55°C
Gate Threshold Voltage
V
DS=VGS
, ID=250µA
Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
Drain-Source On-state
Resistance
VGS=10V, ID=23A 4.5 5
V
=5V, ID=17A 7 8
GS
Diode Forward Voltage IS=6A, VGS=0V 0.6 1.1 V
W
°C
80 °C/W
APM4430
Unit
Min. Typ. Max.
30 V
A
µ
5
A
µ
13V
m
Ω
Dynamic
Q
Total Gate Charge 40 55 nC
g
Q
Gate-Source Charge 17 nC
gs
Q
t
t
d(OFF)
C
C
C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
gd
d(ON)
t
r
t
f
iss
oss
rss
Gate-Drain Charge
Turn-on Delay Time 30 45 ns
Turn-on Rise Time 16 24 ns
Turn-off Delay Time 100 150 ns
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
=15V, VGS=4.5V,
V
DS
=23A
I
D
V
=15V, ID=1A,
DD
V
=10V, RG=0.2
GEN
=0V
V
GS
=15V
V
DS
Ω
Frequency=1.0MHz
14 nC
55 70 ns
4800 pF
900 pF
320 pF
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Page 3
APM4430
Typical Characteristics
Output Characteristics
80
70
60
50
40
30
-Drain Current (A)
D
20
I
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS-Drain-to-Source Voltage (V)
0.4
0.2
0.0
VGS=5,6,7,8,9,10V
VGS=4.5V
VGS=4V
VGS=3V
ID=250uA
Transfer Characteristics
60
48
36
TJ=25°C
24
-Drain Current (A)
D
I
12
TJ=125°C
TJ=-55°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain CurrentThreshold Voltage
0.010
0.008
VGS=5V
-0.2
-0.4
-V ariance (V)
GS(th)
-0.6
V
-0.8
-1.0
-50-250 255075100125150
TJ-Junction T emperature (°C) ID-Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
0.006
VGS=10V
0.004
(on)-On-Resistance(Ω)
DS
0.002
R
0.000
0 102030405060
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Page 4
APM4430
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.016
ID=23A
0.014
0.012
0.010
0.008
0.006
(on)-On Resistance (Ω)
DS
R
0.004
0.002
0246810
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Junction T emperature
1.8
VGS=10V
ID = 23A
1.6
On-Resistance vs. Junction T emperature
0.008
0.007
0.006
0.005
0.004
0.003
0.002
(on)-On Resistance (Ω)
DS
R
0.001
0.000
10
VGS=10V
I
= 23A
D
-50-250 255075100125150
TJ-Junction T emperature (°C )
Gate Charge
VDS=15V
ID = 23A
8
1.4
1.2
(Normalized)
1.0
(on)-On-Resistance(Ω)
DS
0.8
R
0.6
-50 -25 0 25 50 75 100 125 150
T
-Junction T emperature (°C)
J
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
6
4
-Gate-Source Voltage (V)
2
GS
V
0
0 102030405060708090
QG-Gate Charge (nC)
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Page 5
APM4430
Typical Characteristics
Capacitance
7000
6000
5000
4000
3000
2000
Capacitance (pF)
1000
0
0 5 10 15 20 25 30
0
10
Time (sec)
60
50
40
30
Power (W)
20
10
0
-2
10
VDS-Drain-to-Source Voltage (V)
Single Pulse Power
-1
10
Ciss
Coss
Crss
10
Source-Drain Diode Forward Voltage
70
TJ=150°C
10
-Source Current (Α)
S
I
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VDS-Source-to-Drain Voltage (V )
Safe Operation Area
I
D M
100
I
D
10us
10
100us
1
10
2
1
-Drain Current (A)
D
I
0.1
V
=10V
G S
Single Pulse
TC=25°C
0.01
0.01 0.1 1 10 100
VDS-Drain-to-Source Voltage (V)
1ms
10ms
100ms
DC
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
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Page 6
APM4430
Typical Characteristics
S
2
1
Duty Cycle=0.5
0.2
0.1
0.1
0.05
Thermal Impedance
Normalized Effective Transient
0.01
-4
10
0.02
SINGLE PULSE
10
-3
-2
10
-1
10
0
10
Square Wave Pulse Duration (sec)
1.Duty Cycle,D=t1/t2
2.Per Unit Base=R
3.T
JM-TA=PD MZ t h J A
4.Surface Mounted
thJA
1
10
=80°C
2
10
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
www.anpec.com.tw6
Page 7
APM4430
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50B SC
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
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Page 8
APM4430
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb).
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classificatio n R e flo w P r of ile s
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/ -0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 9
APM4430
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
SOP-8
Application
SOP-8
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
A B C J T1 T2 W P E
330±1 62 ± 1.5
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1
12.75 +
0.1 5
1.55+ 0.25
2 + 0.5 12.4 +0.2
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
2± 0.2
12 + 0.3
- 0.1
8± 0.1 1.75± 0.1
(mm)
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Page 10
APM4430
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
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