Page 1
APM4429
P-Channel Enhancement Mode MOSFET
Features
• -30V/-13A, R
R
R
••
• Super High Density Cell Design
••
••
• Reliable and Rugged
••
••
• SO-8 Package
••
= 8mΩ(typ.) @ V
DS(ON)
= 9mΩ(typ.) @ V
DS(ON)
=13mΩ(typ.) @ V
DS(ON)
= -20V
GS
= -10V
GS
= -4.5V
GS
Pin Description
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
5
5
/,
!
"#
&5
%
$
,
,
,
SO − 8
SSS
G
D
DDD
P-Channel MOSFET
APM 4429
Lead Free Code
Handling Code
Temp. Range
Package Code
APM 4429 K:
APM 4429
XXXXX
Absolute Maximum Ratings (T
Package Code
K : S O -8
Operation Junction Tem p. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Bland : Orginal Device
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage -30
DSS
V
Gate-Source Voltage ±20
GSS
*
I
Maximum Drain Current Continuous
D
T
= 25°C
A
-13
V
A
IDM Maximum Drain Current Pulsed -50
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw1
Page 2
APM4429
Absolute Maximum Ratings (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
)
T
T
J
R
θ
JA
Maximum Operating and Storage Junction Temperature -55 to 150
STG
*
Thermal Resistance - Junction to Ambient 62.5 °C/W
T
= 25°C
A
T
= 100°C
A
2.5
1.0
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
VSD Diode Forward Voltage> I
Dynamic=
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
d(ON)
Tr Turn-on Rise Time
t
d(OFF)
Tf Turn-off Fall Time
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
>
Turn-on Delay Tim e
Turn-off Delay Time
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
V
V
V
V
VGS=-20V , IDS=-13A
VGS=-10V , IDS=-13A
V
V
l
V
V
R
V
V
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
=0V , I
GS
=-24V , V
DS
DS=VGS
=±20V , V
GS
=-4.5V , ID=-12A
GS
=-3A, VGS=0V
SD
=-15V , VGS=-10V
DS
=-13A
D
=-15V , ID=-1A ,
DD
=-10V , RG=6Ω
GEN
=15Ω
L
=0V
GS
=-25V
DS
=-250µA
DS
=0V -1 µA
GS
, I
=-250µA
DS
=0V
DS
APM4429
=
Typ
Min.
. Max.
-30
-1 -1.5 -2
±100
8 11
9 12
13 17
-0.7 -1.3
105 135
10.8
13.6
15 30
20 30
55 85
40 65
4730
800
240
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
W
°C
Unit
V
V
nA
m Ω
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw2
Page 3
APM4429
Typical Characteristics
Output Characteristics
50
-VGS= 4,5,6,7,8,9,10V
40
30
20
-VGS=3V
-VGS=2.5V
-ID-Drain Current (A)
10
-VGS=2V
0
0246810
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
1.50
-IDS =250µA
Transfer Characteristics
50
40
30
20
-ID-Drain Current (A)
10
0
01234
-V
On-Resistance vs. Drain Current
0.030
0.025
Tj=25oC
GS - Gate-to-Source Voltage (V)
Tj=125oC
Tj=-55oC
1.25
1.00
0.75
(Normalized)
0.50
0.25
-VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
0.020
0.015
0.010
0.005
RDS(on)-On-Resistance (Ω)
0.000
0 20406080100
-VGS=20V
-VGS=4.5V
-VGS=10V
-ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM4429
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
-ID= 13A
RDS(on)-On-Resistance (Ω)
0.00
0 5 10 15 20
-VGS - Gate-to-Source Voltage (V)
Gate Charge
10
-VDS= 15 V
-I
= 13 A
D
8
6
On-Resistance vs. Junction Temperature
1.75
-VGS = 10V
-I
= 13A
1.50
1.25
1.00
(Normalized)
0.75
RDS(on)-On-Resistance (Ω)
0.50
D
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
7000
6000
5000
4000
Capacitance
Frequency=1MHz
Ciss
4
2
-VGS-Gate-Source Voltage (V)
0
0306090120
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
3000
2000
Capacitance (pF)
1000
0
0 5 10 15 20 25 30
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM4429
Typical Characteristics
Source-Drain Diode Forward Voltage
50
10
1
-Source Current (A)
S
-I
0.1
0.0 0.4 0.8 1.2 1.6 2.0
Tj=150oC
Tj=25oC
-VSD-Source-to-Drain Voltage (V )
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Single Pulse Power
120
90
60
Power (W)
30
0
0.01 0.1 1 10 30
Time (sec)
Duty Cycle=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
D=0.02
SINGLE PULSE
1E-3
1E-4 1E-3 0.01 0.1 1 10 30
Square Wave Pulse Duration (sec)
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
www.anpec.com.tw5
=62.5oC/W
Page 6
APM4429
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
1 8
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw6
Page 7
APM4429
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 150 seconds
10 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
www.anpec.com.tw7
Page 8
APM4429
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
P
P1
Ao
J
W
E
F
Po
A
t
D
Bo
D1
C
Ko
T2
B
T1
Application A B C J T1 T2 W P E
330 ± 1 62 +1.5
F D D1 Po P1 Ao Bo Ko tSOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
12.75+
0.15
2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
www.anpec.com.tw8
Page 9
APM4429
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw9
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