Datasheet APM4427KC-TU, APM4427KC-TR Datasheet (ANPEC)

APM4427

P-Channel Enhancement Mode MOSFET

Features

• -30V/-4A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOP-8 Package

••

=88mΩ(typ.) @ VGS=-10V

DS(ON)

=147mΩ(typ.) @ VGS=-4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4427

Handling Code
Temp. Range
Package Cod e

APM 4427 K :

APM4427
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous -4
Maximum Drain Current – Pulsed -16

Parameter Rating Unit

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Re e l

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

www.anpec.com.tw1

APM4427

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-24V , VGS=0V -1

DS

V
V

, IDS=-250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=-10V , IDS=-4A

=-4.5V , IDS=-2.3A

V

GS

=-15V , IDS=-2A

V

DS

=-10V

V

GS

=-15V , IDS=-1A ,

V

DD

=-10V , RG=6

V

GEN

R

=15

Ω

L

Ω

VGS=0V

=-25V

V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

2.5

1.0

°

APM4427

Min. Typ. Max.

-30 V

-1 -1.5 -2
100

±

88 115

147 185

-0.7 -1.3

12.3 15

3.5

1.1
10 20
10 25
25 55

515
550
100

60

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

www.anpec.com.tw2

APM4427

Typical Characteristics

Output Characteristics

20

-VGS=6,7,8,9,10V

16

-VGS=5V

12

8

-ID-Drain Current (A)

4

0

0246810

-VGS=4V

-VGS=3V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

-IDS=250uA

Transfer Characteristics

20

16

12

8

-ID-Drain Current (A)

4

0

01234567

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.30

0.25

TJ=125°C

TJ=25°C

TJ=-55°C

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

0.20

-VGS=4.5V

0.15

0.10

0.05

RDS(ON)-On-Resistance (Ω)

0.00
012345678

-VGS=10V

-ID - Drain Current (A)

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APM4427

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.40

0.35

0.30

0.25

0.20

0.15

0.10

RDS(ON)-On-Resistance (Ω)

0.05

0.00
2345678910

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VDS=15V

-ID=2A

8

-ID=4A

On-Resistance vs. Junction T emperature

2.00

-VGS=10V

-I

D=4A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 1 50

TJ - Junction Temperature (°C)

Capacitance

800
700
600

Frequency=1MHz

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

02468101214

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

500
400
300

Capacitance (pF)

200
100

0

0 5 10 15 20 25 30

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

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APM4427

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

20
10

1

TJ=150°C

TJ=25°C

-IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

80
70
60
50
40
30

Power (W)

20
10

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle=0.5

D=0.2
D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

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APM4427

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

www.anpec.com.tw6

APM4427

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow C ond itio n

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Pre-heat temperature

°

183 C

Classificatio n R e flow Profiles

Peak temperature

Time

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak

temperature
Peak temperature range
Ramp-down rate

Time 25°C to peak temperature

120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds

220 +5/-0°C or 235 +5/-0°C 215~ 2 19°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bags

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and p kg .
volume < 350mm³

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APM4427

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

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APM4427

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2003

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