Datasheet APM4425KC-TU, APM4425KC-TR Datasheet (ANPEC)

APM4425

P-Channel Enhancement Mode MOSFET

Features

• -30V/-11A, R

R

= 11mΩ(typ.) @ VGS = -10V

DS(ON)

= 15mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

• Super High Density Cell Design

••

• Reliable and Rugged

••

••

• SO-8 Package

••

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4425

Handling Code
Temp. Range
Package Cod e

APM 4425 K :

APM4425
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID* Maximum Drain Current – Continuous
I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±25

= 25°C

T

A

-11

Maximum Drain Current – Pulsed -50

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw1

APM4425

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum J unction Tem p era ture 150
Storage Temperature Ra ng e -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

T

T

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-2.1A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

=0V , IDS=-250µA

GS

V

=-24V , VGS=0V -1

DS

V

DS=VGS

=±25V , VDS=0V

V

GS

VGS=-10V , IDS=-11A
V

=-4.5V , IDS=-8.5A

GS

=-15V , VGS=-10V ,

V

DS

I

=-11A

D

Turn -on Del ay Time

=-15V , ID=-1A ,

Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

V

DD

V

GEN

=0V , VDS=-25V

V

GS

Frequency=1.0MHz

, IDS=-250µA

=-10V , RG=6

Ω

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

APM4425

Min. Typ. Max.

-30 V

-1 -3
100

±

11 14
15 20

-0.6 -1.3

70 91
16

11

20 30

920

118 190

38 76

4600

800
230

W

C

°

Unit

µ

V

nA

m

V

nC

ns

pF

A

Ω

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw2

APM4425

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-VGS=3V

-ID-Drain Current (A)

10

0

012345

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

50

40

30

20

-ID-Drain Current (A)

10

0

012345

TJ=125°C

TJ=25°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

-IDS=250µA

On-Resistance vs. Drain Current

0.0225

0.0200

0.0175

0.0150

0.0125

0.0100

RDS(on)-On-Resistance (Ω)

0.0075

0.0050
0 1020304050

VGS=-4.5V

VGS=-10V

-ID - Drain Current (A)

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APM4425

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
2345678910

-VGS - Gate-to-Source Voltage (V)

-ID=1 1 A

Gate Charge

10

-VD=15V

-ID=11A

8

On-Resistance vs. Junction T emperature

2.0

-VGS=10V

1.8

D=11A

-I

1.6

1.4

1.2

1.0

0.8

(Normalized)

0.6

0.4

RDS(on)-On-Resistance (Ω)

0.2

0.0

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

6000

4800

Frequency=1MHz

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

020406080

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

3600

2400

Capacitance (pF)

1200

0

0 5 10 15 20 25 30

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM4425

Typical Characteristics

Source-Drain Diode Forward Voltage

50

10

TJ=150°C

-Source Current (Α)

S

-I

1

0.00 0.25 0.50 0.75 1.00 1.25 1.50

-VSD-Source-to-Drain Voltage (V )

2

TJ=25°C

Normalized Thermal Transient Impedance, Junction to Ambient

Single Pulse Power

50

40

30

20

Power (W)

10

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

0.1

D= 0.05

Thermal Impedance

D= 0.02

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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30

APM4425

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0. 004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0. 51 0.013 0.020
e2 1.27BSC 0.50B SC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw6

APM4425

Physical Specifications

Terminal Material Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Tem perat ur e m ainta ined abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4425

Reliability Test Program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM4425

Cover Tape Dimensions

Application Carrier Width Cover Tap e Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

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