Datasheet APM4420KC-TU, APM4420KC-TR Datasheet (ANPEC)

APM4420

N-Channel Enhancement Mode MOSFET

Features

• 30V/12.5A, R

R

••

• Super High Dense Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

=6mΩ(typ.) @ VGS=10V

DS(ON)

=10mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems .

Ordering and Marking Information

APM4420

Handling Code
Temp. Range
Package Co de

Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : Tube
TR : Tape & Reel

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

APM4420 K :

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

Drain-So urc e Voltage 30
Gate-Source Voltage ±20
Maximum Drain Cu rr e nt – Continuou s 12.5
Maximu m D rain Curre nt – Pulsed 50

APM4420
XXXXX

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

Parameter Rating Unit

V

A

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APM4420

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

θjA

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Drain-Source Brea k do w n

DSS

Voltage
Zero Gate Voltage Drain

Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2.3A, VGS=0V

SD

b

Parameter Rating Unit

= 25°C unless otherwise noted)

A

V

=0V, ID=250µA

GS

VDS=24V , VGS=0V 1
V
V

DS=VGS

=

±16

GS

, ID=250µA

V, VDS=0V

VGS=10V, ID=12.5A

=4.5V, ID=7A

V

GS

= 25°C unless otherwise noted)

A

TA=25°C

=100°C

T

A

2.5

1.0

APM4420

Min. Typ. Max.

30 V

13

±

69

10 13

0.6 1.3

100

W

°
°

C/W

°

C
C

Unit

A

µ

V

nA

m

Ω

V

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T
C
C
C

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

=15V, ID=12.5A

V

DS

V

=5V ,

GS

V

=15V, ID=1A,

DD

V

GEN

VGS=0V

=15V

V

DS

Frequency=1.0MHz

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

=10V, RG=6Ω, RL=15

28 36

8

nC

5

13 20

915

Ω

43 66

ns

14 28

3200

680

pF

275

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APM4420

Typical Characteristics

Output Characteristics

50

VGS=5,6,7,8,9,10V

40

VGS=4V

30

20

-Drain Current (A)

DS

I

10

VGS=3V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.4

1.2

1.0

IDS=250µA

Transfer Characteristics

50

40

30

20

-Drain Current (A)

DS

I

10

0

0123456

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.016

0.014

0.012

0.010

TJ=25°C

TJ=-55°C

TJ=125°C

VGS=4.5V

0.8

(Normalized)

0.6

-Thershold Voltage (V)

GS(th)

0.4

V

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

0.008

0.006

-On-Resistance (Ω)

0.004

DS(ON)

R

0.002

0.000
0 1020304050

VGS=10V

IDS-Drain Current (A)

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APM4420

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage

0.050

0.045

0.040

0.035

0.030

0.025

0.020

-On-Resistance (Ω)

0.015

DS (ON)

0.010

R

0.005

0.000
345678910

Gate Voltage (V)

Gate Charge

10

VDS=15V

IDS = 12.5A

8

IDS=12.5A

On-Resistaence vs. Junction T emperature

1.8

VGS=10V
IDS=12.5A

1.6

1.4

1.2

1.0

(Normalized)

-On-Resistance (Ω)

0.8

DS(ON)

R

0.6

0.4

-50-250 255075100125150

Tj-Junction T emperature (°C)

Capacitance Characteristics

5000

4000

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 102030405060708090

QG-T otal Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

Ciss

3000

2000

C-Capacitance (pF)

1000

0

0 5 10 15 20 25 30

Coss

Crss

VDS-Drain-to-Source Voltage (V)

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APM4420

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

50

10

TJ=150°C

-Source Current (A)

SD

I

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

VSD-Source to Drain Voltage

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

60

50

40

30

Power (W)

20

10

0

-2

10

-1

10

0

10

Time (sec)

1

10

2

10

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

SINGLE PULSE

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

4. Surface Mounted

thJA

thJA

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=50°C/W

APM4420

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

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APM4420

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a te g ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Clas sific atio n R e flow Pro file s

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak ) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Tem perature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down ra te
Time 2 5°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Pac k age Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5m m
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

pkg. thickness < 2.5mm an d
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350m m³

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APM4420

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

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APM4420

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

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