Datasheet APM4416KC-TR, APM4416KC-TU Datasheet (ANPEC)

APM4416

N-Channel Enhancement Mode MOSFET

Features

• 30V/8A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=15mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

SO-8

1

S

S

GD

2

3

45

8S

D

7

D

6

D

T op View

D

G

S

N-Channel MOSFET

APM4416

Handling Code
Temp. Range
Package Cod e

APM 4416 K :

APM4416
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 8
Maximum Drain Current – Pulsed 32

Parameter Rating Unit

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw1

APM4416

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

VDS=24V , VGS=0V 1

=24V, VGS=0V, Tj= 55°C

V

DS

V
V

, IDS=250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=10V , IDS=4A

=4.5V , IDS=2A

V

GS

=15V , IDS= 10A

V

DS

=5V

V

GS

V

=15V , IDS=2A ,

DD

V

=10V , RG=6

GEN

=0V

V

GS

=15V

V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

2.5

1.0

APM4416

Min. Typ. Max.

30 V

5

13

100

±

15 18
22 30

0.6 1.3

15 20

5.8

3.8
11 18
17 26
37 54
20 30

1150

230
100

W

°
°

C/W

°

C
C

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

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APM4416

Typical Characteristics

Output Characteristics

30

25

20

15

-Drain Current (A)

10

DS

I

5

0

0246810

VGS=5,6,7,8,9,10V

VGS=4V

VGS=3.5V

VGS=3V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

Transfer Characteristics

40

30

20

-Drain Current (A)

DS

10

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

1.0

0.8

(Normalized)

-Threshold Voltage (V)

0.6

GS(th)

V

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

0.030

VGS=4.5V

0.025

0.020

VGS=10V

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

IDS-Drain Current (A)

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APM4416

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage

0.045

0.040

0.035

0.030

0.025

0.020

-On-Resistance (Ω)

0.015

0.010

DS (ON)

R

0.005

0.000
345678910

IDS=4A

Gate Voltage (V)

Gate Charge

10

VDS=15V

IDS=10A

8

On-Resistaence vs. Junction T emperature

1.6

1.4

1.2

VGS=10V

=4A

I

DS

1.0

0.8

-On Resistance (Ω) (Normalized)

DS(ON)

0.6

R

-50 -25 0 25 50 75 100 125

Tj-Junction T emperature (°C)

Capacitance Characteristics

2000

1000

Ciss

150

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 5 10 15 20 25 30

QG-T otal Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

500

C-Capacitance (pF)

100

Coss

Crss

Frequency=1MHz

0.1 1 10

30

VDS-Drain-to-Source Voltage (V)

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APM4416

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

100

10

1

-Source Current (A)

SD

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=125°C

TJ=25°C

TJ=-55°C

VSD-Source to Drain Voltage

Normalized Transient Thermal Transient Impedence, Junction to Ambient

60

50

40

30

Power (W)

20

10

0

-2

10

Single Pulse Power

-1

10

0

10

Time (sec)

1

10

2

10

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

D=0.02

SINGLE PULSE

0.01

-4

10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

-3

10

-2

10

-1

10

10

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

4. Surface Mounted

0

thJA

10

thJA

1

=50°C/W

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2

10

APM4416

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw6

APM4416

Physical Specifications

Terminal Material Solder-Plated Copper (Solder M aterial : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Ca te gory 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4416

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

E

F

W

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

T1

Application

A B C J T1 T2 W P E

330 ± 1 62 +1.5

SOP- 8

F D D1 Po P1 Ao Bo Ko t

5.5± 1 1.55 +0.1 1.55+ 0 .25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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8

APM4416

Cover Tape Dimensions

Application Carrier Width Cover Tap e Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

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