Datasheet APM4410KC-TU, APM4410KC-TR Datasheet (ANPEC)

APM4410

N-Channel Enhancement Mode MOSFET

Features

• 30V/11.5A, R

R

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

= 9mΩ(typ.) @ VGS = 10V

DS(ON)

=14.5mΩ(typ.) @ VGS = 4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

APM4410

Handling Code

Temp. Range

Package Code

Package Code
K : S O -8
Operating Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : Tube
TR : Tape & R ee l

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

APM 4410 K :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

I

D

I

DM

P

D

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 11.5

Maximum Drain Current – Pulsed 50

Maximum Power Dissipation

APM 4410
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

V

A

TA=25°C

=100°C

T

A

2.5

1.0

W

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APM4410

Thermal Characteristics

Symbol

T

J

T

STG

R

θJA

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

Parameter Rating Unit

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID=250µA

GS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 uA

Gate Threshold Voltage

Gate Leakage Current VGS=±20V, V

Drain-Source On-state Resistance

V

DS=VGS

VGS=10V, ID=11.5A 9 11

b

, ID=250µA

=0V ±100 nA

DS

VGS=4.5V, ID=5A

Diode Forward Voltage

SD

a

Total Gate Charge 45 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD=2.3A, VGS=0V 0.6 1.2 V

V

=15V, VGS=10V,

DS

=10A

I

D

Turn-on Delay Time 16 25

=15V, RL=15Ω,

V

t

Turn-on Rise Time 24 35

r

Turn-off Delay Time 78 110

t

Turn-off Fall Time

f

Input Capacitance 2000

iss

Output Capacitance 400

oss

Reverse Transfer Capacitance

rss

DD

=1A , V

I

D

=6Ω,

R

G

V

=0V, VDS=25V

GS

GEN

=10V,

Frequency = 1.0MHZ

Min. Typ

30 V

°C

APM4410

a

.

Max.

Unit

13V

m

14.5 16

Ω

nC

8

ns

42 80

pF

220

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

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APM4410

Typical Characteristics

Output Characteristics

50

VGS=5,6,7,8,9,10V

40

30

20

-Drain Current (A)

DS

I

10

0

0246810

VGS=4V

VGS=3V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.4

IDS=250µA

1.2

Transfer Characteristics

50

40

30

20

-Drain Current (A)

DS

I

10

0

012345

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.020

0.016

TJ=25°C

TJ=-55°C

TJ=125°C

1.0

0.8

(Normalized)

0.6

0.4

VGS(th)-Threshold Voltage (V)

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

VGS=4.5V

0.012

0.008

VGS=10V

-On-Resistance (Ω)

DS(ON)

0.004

R

0.000
0 5 10 15 20 25 30 35

IDS-Drain Current (A)

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APM4410

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage

0.10

0.08

0.06

0.04

-On-Resistance (Ω)

DS (ON)

0.02

R

0.00
0246810

Gate Voltage (V)

Gate Charge

10

VDS=15V

IDS=11.5A

8

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

0 9 18 27 36 45

IDS=11.5A

On-Resistaence vs. Junction Temperature

2.00

VGS=10V
IDS=11.5A

1.75

1.50

1.25

1.00

0.75

(Normalized)

-On-Resistance (Ω)

0.50

DS(ON)

R

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

3000

2500

Ciss

2000

1500

1000

C-Capacitance (pF)

500

0

0 5 10 15 20 25 30

Coss

Crss

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

VDS-Drain-to-Source Voltage (V)

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APM4410

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

50

10

-Source Current (A)

SD

I

TJ=150°C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

VSD-Source to Drain Voltage

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

80

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

SINGLE PULSE

0.01
1E-4 1E-3 0. 01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

4. Surface Mounted

thJA

thJA

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=50°C/W

APM4410

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

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APM4410

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb).
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4410

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

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APM4410

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

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