Page 1
N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO − 8
APM 4408
Handling Code
Temp. Range
Package Code
Package Code
K : SO -8
Operation Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : T u b e
TR : T a p e & R ee l
APM 4408 K :
APM 4408
XXXXX
XXXXX - Date Code
• 20V/21A, R
DS(ON)
= 3.5mΩ(typ.) @ VGS = 10V
R
DS(ON)
= 5mΩ(typ.) @ VGS = 4.5V
R
DS(ON)
= 8mΩ(typ.) @ VGS = 2.5V
••
••
•
High Density Cell Design
••
••
•
Reliable and Rugged
••
••
•
SO-8 Package
Symbol
Parameter Rating Unit
V
DSS
Drain-Source Voltage 20
V
GSS
Gate-Source Voltage ±16
V
I
D
*
Maximum Drain Current – Continuous 21
I
DM
Maximum Drain Current – Pulsed 60
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
N-Channel MOSFET
G
S
D
1
2
3
45
6
7
8S
S
S
GD
D
D
D
Page 2
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw2
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Absolute Maximum Ratings Cont. (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
TA=25°C
1.6
P
D
Maximum Power Dissipation
T
A
=100°C
0.625
W
T
J
Maximum Junction Temperature 150
°
C
T
STG
Storage Temperature Range -55 to 150
°
C
R
θ
JA
Thermal Resistance – Junction to Ambient 80
°
C/W
APM4408
Symbol Parameter Test Condition
Min. Typ. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , IDS=250µA
20 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=18V , VGS=0V 1
µ
A
V
GS(th)
Gate Threshold Voltage
V
DS=VGS
, IDS=250µA
0.8 1.5
V
I
GSS
Gate Leakage Current
V
GS
=±16V , VDS=0V
±
100
nA
VGS=10V , IDS=21A
3.5 4.5
VGS=4.5V , IDS=17A
56
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , IDS=10A
810
m
Ω
V
SD
a
Diode Forward Voltage ISD=2.9 A , VGS=0V
0.6 1.3
V
Dynamic
b
Q
g
Total G ate Charg e
45 65
Q
gs
Gate-Source Charge
20
Q
gd
Gate-Dra in C harge
V
DS
=10V , IDS= 21A
V
GS
=4.5V ,
17
nC
t
d(ON)
Turn-on De lay T im e
35 50
T
r
Turn - on Ris e Time
19 28
t
d(OFF)
Turn-off Delay Time
110 170
T
f
Turn-off Fall Time
V
DD
=10 V , IDS=1A ,
V
GEN
=4.5V , RG=6
Ω
60 75
ns
C
iss
Input Capacitance
5300
C
oss
Output Capacitance
1000
C
rss
Reverse Transfer Capacitance
VGS=0V
V
DS
=15V
Frequency=1.0MHz
300
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Page 3
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw3
Typical Characteristics
012345
0
10
20
30
40
50
Output Characteristics
VDS-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
VGS=4,5,6,7,8,9,10V
VGS=3V
0123456
0
10
20
30
40
50
Transfer Characteristics
VGS-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
TJ=125°C
TJ=25°C
TJ=-55°C
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Threshold Voltage vs. Junction Temperature
Tj-Junction T emperature (°C)
IDS=250µA
0 1020304050
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
On-Resistance vs. Drain Current
IDS-Drain Current (A)
R
DS(ON)
-On-Resistance (Ω)
VGS=10V
VGS=4.5V
VGS(th)-Threshold Voltage (V)
(Normalized)
Page 4
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw4
0 5 10 15 20
0
1000
2000
3000
4000
5000
6000
7000
8000
Typical Characteristics Cont.
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
On-Resistaence vs. Junction T emperature
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
Tj-Junction T emperature (°C)
VGS=10V
I
DS
=21A
012345678910
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (Ω)
Gate Voltage (V)
IDS=21A
Capacitance Characteristics
VDS-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
0 102030405060708090
0
2
4
6
8
10
Gate Charge
QG-T otal Gate Charge (nC)
V
GS
-Gate-to-Source Voltage (V)
VDS=10V
IDS=21A
Frequency=1MHz
Page 5
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw5
Typical Characteristics Cont.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
50
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
VSD-Source to Drain Voltage
TJ=25°C
TJ=150°C
0.01 0.1 1 10
0
20
40
60
80
100
Time (sec)
Single Pulse Power
Power (W)
1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50°C/W
3. TJM-TA=PDMZ
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Page 6
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw6
Packaging Information
Millimeters Inches
Dim
Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0. 020
e2 1.27BSC 0.50BSC
φ
18
°
8
°
HE
e1 e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Page 7
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw7
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature
10 –20 seconds 60 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
≥≥≥≥
2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥
350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition (IR/Convection or VPR
Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Terminal Material Solder-Plated C opper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Sp ecification RSI86-91, A NSI/J-STD-002 Category 3.
Page 8
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw8
R e lia bilit y te s t pr o g ra m
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003
245°C , 5 SEC
HO LT MIL-STD-883D-1005.7
1000 Hrs Bias @ 125 °C
PCT JESD-22-B, A102
168 Hrs, 100 % RH , 121°C
TST MIL-STD-883D-1011.9
-65°C ~ 150°C, 200 Cycles
ESD MIL-STD-883D-3015.7 VHB M > 2KV, VMM > 200V
La tc h -Up JES D 78 10 ms , Itr > 100mA
Carrier Tape
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Application
A B C J T1 T2 W P E
330 ± 1 62 +1.5
12.75+
0.15
2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
F D D1 Po P1 Ao Bo Ko t
SOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
Page 9
Copyright ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw9
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
12 9.3 2500
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