Page 1
APM4220
N-Channel Enhancement Mode MOSFET
Features
• 25V/14A, R
R
••
• Super High Dense Cell Design for
••
Extremely Low R
••
• Reliable and Rugged
••
••
• SOP-8 Package
••
=7.5mΩ(typ.) @ VGS=10V
DS(ON)
=10mΩ(typ.) @ VGS=4.5V
DS(ON)
DS(ON)
Pin Description
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
APM4220
Lead Free Code
Handling Code
Temp. Range
Package Co de
Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Re el
Lead Free Code
L : Lead Free Device Blank : Orginal Device
1
S
S
GD
2
3
45
8S
7
6
D
D
D
SO − 8
D
G
S
N-Channel MOSFET
APM4220 K :
Absolute Maximum Ratings
APM4220
XXXXX
XXXXX - Date C od e
(TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V
Drain-Source Voltage 25
DSS
V
Gate-Source Voltage ±20
GSS
*
I
Maximum Drain Current – Continuous 14
D
IDM Maximum Drain Current – Pulsed 60
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw1
Page 2
APM4220
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD
Maximum Power Dissipation
=100°C
T
A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
TA=25°C
R
θ
JA
Thermal Resistance – Junction to Ambient 50
2.5
W
1.0
°C
°C
°C/W
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM4220
Min.
Typ. Max.
Unit
Static
BV
Drain-Source Breakdown Voltage
DSS
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±20V, VDS=0V
GSS
a
R
DS(ON)
V
Drain-Source On-state Resistance
a
Diode Forward Voltage IS=16A, VGS=0V
SD
=0V, IDS=250µA
V
GS
=20V , VGS=0V 1 µA
V
DS
V
DS=VGS
VGS=10V, IDS=14A
=4.5V,IDS=8A
V
GS
, IDS=250µA
25
1 1.5 2
±100
7.5 9
10 12
0.7 1.2
V
V
nA
mΩ
V
Dynamicb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
VDS=15V, IDS=14A
=4.5V,
V
GS
V
=15V, IDS=1A,
DD
=10V,RG=6Ω,
V
GEN
VGS=0V
V
=15V
DS
Fre
uency=1.0MHz
16 20
6
nC
6
10 15
7 13
35 50
ns
10 20
1785
605
pF
490
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Page 3
APM4220
Typical Characteristics
Output Characteristics
60
VGS= 4,5,6,7,8,9,10V
50
40
30
20
-Drain Current (A)
DS
I
10
0
0246810
VGS=3V
VGS=2.5V
VGS=2V
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
Transfer Characteristics
60
50
40
30
Tj=125oC
20
-Drain Current (A)
D
I
10
0
012345
Tj=25oC
Tj=-55oC
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.014
1.0
0.8
(Normalized)
-Thershold Voltage (V)
0.6
GS(th)
V
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
-On-Resistance (Ω)
DS(ON)
R
0.012
VGS=4.5V
0.010
0.008
0.006
0.004
0 102030405060
VGS=10V
IDS-Drain Current (A)
www.anpec.com.tw3
Page 4
APM4220
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
0.015
0.010
-On-Resistance (Ω)
DS (ON)
0.005
R
0.000
0246810
VGS-Gate-to-Source Voltage (V)
ID= 14A
Gate Charge
10
VDS=10 V
I
=14A
DS
8
On-Resistaence vs. Junction T emperature
1.6
VGS=10V
=14A
I
1.4
1.2
DS
1.0
(Normalized)
-On-Resistance (Ω)
0.8
DS(ON)
R
0.6
-50 -25 0 25 50 75 100 125 150
Tj-Junction T emperature (°C)
Capacitance
3000
2500
Frequency=1MHz
6
4
2
-Gate-to-Source Voltage (V)
GS
V
0
0 8 16 24 32
QG-Total-Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
2000
1500
1000
Capacitance (pF)
500
0
0 5 10 15 20 25
Crss
VDS-Drain-to-Source Voltage (V)
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Ciss
Coss
Page 5
APM4220
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage Single Pulse Power
16
10
Tj=125oC
1
-Source Current (A)
SD
I
0.1
0.0 0.3 0.6 0.9 1.2 1.5
VSD-Source to Drain Voltage (V)
80
60
Tj=-55oC
Tj=25oC
Normalized Transient Thermal Transient Impedence, Junction to Ambient
40
Power (W)
20
0
0.01 0.1 1 10 30
Time (sec)
2
1
Duty Cycle=0.
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
D=0.02
D=0.01
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 30
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
Square Wave Pulse Duration (sec)
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
3. TJM-TA=PDMZ
4. Surface Mounted
thJA
thJA
www.anpec.com.tw5
=50°C/W
Page 6
APM4220
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw6
Page 7
APM4220
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Clas sific atio n R e flow Pr ofile s
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak ) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 18 3°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down ra te
Time 2 5°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Pac k age Reflo w Condition s
pkg. thickness ≥≥≥≥ 2.5m m
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
pkg. thickness < 2.5mm an d
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350m m³
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Page 8
APM4220
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
SOP-8
Application
SOP-8
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
A B C J T1 T2 W P E
330±1 62 ± 1.5
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1
12.75 +
0.1 5
1.55+ 0.25
2 + 0.5 12.4 +0.2
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
2± 0.2
12 + 0.3
- 0.1
8± 0.1 1.75± 0.1
(mm)
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Page 9
APM4220
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw9
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