Page 1
APM3095P
P-Channel Enhancement Mode MOSFET
Features
• -30V/-6A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• TO-252 Package
••
=95mΩ(typ.) @ VGS=-10V
DS(ON)
=140mΩ(typ.) @ VGS=-4.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
GDS
Top View of T O-252
S
G
DD
P-Channel MOSFET
APM 3095P
Handling Code
Temp. Range
Package Code
APM 3095P U :
APM 3095P
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage -30
Gate-Source Voltage ±25
Maximum Drain Current – Continuous -12
Maximum Drain Current – Pulsed -30
Parameter Rating Unit
Package Code
U : T O-2 5 2
Operating Junction Temp. Range
C : -5 5 to 1 5 0 °C
Handling Code
TU : T u b e
TR : Tape & Reel
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw1
Page 2
APM3095P
Absolute Maximum Ratings Cont. (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakd o w n
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=-1.25A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=-250µA
GS
V
=-24V , VGS=0V -1
DS
V
V
, IDS=-250µA
DS=VGS
=±25V , VDS=0V
GS
VGS=-10V , IDS=-6A
=-4.5V , IDS=-3A
V
GS
=-15V , IDS=-3A
V
DS
=-10V
V
GS
=-15V , IDS=-1A ,
V
DD
=-10V , RG=6
V
GEN
R
=15
Ω
L
Ω
VGS=0V
=-25V
V
DS
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
50
20
°
APM3095P
Min. Typ. Max.
-30 V
-1 -1.5 -2
100
±
95 110
140 160
-0.7 -1.3
813
1.9
1.1
10 20
820
25 50
515
550
120
75
W
C
°
C
°
C/W
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw2
Page 3
APM3095P
Typical Characteristics
Output Characteristics
10
-VGS=5,6,7,8,9,10V
8
6
4
-ID-Drain Current (A)
2
0
0246810
-VGS=4V
-VGS=3V
-VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
1.00
-IDS=250uA
Transfer Characteristics
10
8
6
4
-ID-Drain Current (A)
2
0
012345
TJ=125°C
TJ=-55°C
TJ=25°C
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.24
0.21
0.18
0.15
-VGS=4.5V
0.75
(Normalized)
0.50
0.25
-VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
0.12
0.09
0.06
RDS(ON)-On-Resistance (Ω)
0.03
0.00
012345678
-VGS=10V
-ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM3095P
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.30
0.25
0.20
0.15
0.10
RDS(ON)-On-Resistance (Ω)
0.05
0.00
0246810
-ID=3A
-VGS - Gate-to-Source Voltage (V)
Gate Charge
10
-VDS=15V
9
-ID=3A
8
7
6
5
4
3
2
-VGS-Gate-Source Voltage (V)
1
0
012345678
Q
G - Gate Charge (nC)
On-Resistance vs. Junction T emperature
2.00
-VGS=10V
-I
D=6A
1.75
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
800
700
600
500
400
300
Capacitance (pF)
200
100
0
0 5 10 15 20 25 30
Capacitance
Frequency=1MHz
Ciss
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw4
Page 5
APM3095P
Typical Characteristics
Source-Drain Diode Forward Voltage
10
1
TJ=150°C
TJ=25°C
-IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
250
200
150
100
Power (W)
50
0
1E-3 0.01 0.1 1 10 100 1000
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
Thermal Impedance
Normalized Effective Transient
0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
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Page 6
APM3095P
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0. 035
b2 5.207 5.4 61 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.2 45
E 6.35 6.73 0.250 0.265
e1 3.96 5.1 8 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.0 2 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
Min. Max. Min. Max .
Millimeters Inches
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Page 7
APM3095P
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow C ond itio n
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classificatio n R e flow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and p kg .
volume < 350mm³
www.anpec.com.tw7
Page 8
APM3095P
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 9
APM3095P
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw9
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