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APM3040NDC-TR
Datasheet (ANPEC)
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Datasheet APM3040NDC-TR Datasheet (ANPEC)

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Page 1
APM3040N
N-Channel Enhancement Mode MOSFET
Features
• 30V/4.5A, R
R R
••
•
Super High Dense Cell Design for Extremely
••
••
• High Power and Current Handling Capability
••
••
• SOT-89 Package
••
=31mΩ(typ.) @ VGS=10V
DS(ON)
=35mΩ(typ.) @ VGS=4.5V
DS(ON)
=55mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer.
• Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
123
GDS
Top View of SOT-89
D
G
S
N-Channel MOSFET
APM 3040N
Handling Code Tem p. Range Package Code
APM 3040N D :
APM 3040N XXXXX
Absolute Maximum Ratings (T
Package Code
Operating Junction Tem p. Range
C : -55 to 125 C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
= 25°C unless otherwise noted)
A
°
Symbol Parameter Rating Unit
V
Drain-Source Voltage 30 Gate-Source Voltage ±12 Maximum Drain Current – Continuous 4.5 Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
V
A
20
V
IDM
DSS
GSS
ID
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw1
Page 2
APM3040N
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
TA=25°C 1.4
W
T R
PD
TJ
STG
θ
Maximum Power Dissipation
T
=100°C 0.5
A
Maximum Junction Temperature Storage Temperature Range -55 to 150 °C
JA
Thermal Resistance – Junction to Ambient 85 °C/W
150 °C
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
V
I
DSS
DSS
GS(th)
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Curren t
= 25°C unless otherwise noted)
A
V
=0V, IDS=250µA
GS
V
=24V, VGS=0V
DS
V
DS=VGS
V
GS
, IDS=250µA
=±12V, VDS=0V
APM3040N
Min. Typ. Max.
Unit
30 V

1
µA
0.6 0.75 1.5 V

±100
nA
VGS=10V, IDS=3A 31 40
Drain-Source On-s tate
R
a
DS(ON)
V
SD
Resistance
a
Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V
VGS=4.5V, IDS=1.5A 35 50
=2.5V, IDS=0.5A 55 70
V
GS
Dynamicb
Qg Total Gate Charge 9.2 13
V
=10V, VGS=4.5V,
Qgs Gate-Source Charge 2.5
Qgd Gate-Drain Charge
t
Turn-on Delay Time 11 22
d(ON)
tr Turn-on Rise Time 17 32
t
Turn-off Delay Time 37 68
d(OFF)
tf Turn-off Fall Time
C
iss
C
oss
C
rss
Input Capacitance 426
Output Capacitance 80
Reverse Transfer
DS
I
=3A
DS
V
=15V,ID=3A,
DD
V
=10V, RG=6Ω
GS
=0V
V
GS
=25V
V
DS
Frequency=1.0MHz
2
20 38
39
Notes: a: Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
b
: Guaranteed by design, not subject to production testing.
mΩ
nC
ns
pF
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw2
Page 3
APM3040N
Typical Characteristics
Output Characteristics
20 18 16 14 12 10
8 6
ID-Drain Current (A)
4 2 0
012345678910
VGS=3,4,5,6,7,8,9,10 V
Threshold Voltage vs. Temperature
1.6
1.4
1.2
1.0
0.8
VGS=2V
VGS=1.5V
IDS =250µA
(Normalzed)
0.6
0.4
VGS(th)-Threshold Voltage (V)
0.2
-50 -25 0 25 5 0 75 100 125 150
Tj - Junction T emperature (°C)
Transfer Characteristics
20 18 16 14 12 10
8 6
ID-Drain Current (A)
4 2 0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
Tj=125oC
Tj=25oC
Tj=-55oC
VGS - Gate-to-Source V oltage (V)VDS - Drain-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
DS(on)-On-Resistance (Ω)
0.02
R
0.01
0.00 0246810
VGS=2.5V
VGS=4.5V
VGS=10V
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw3
Page 4
APM3040N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.055
0.050
0.045
0.040
0.035
0.030
RDS(on)-On-Resistance (Ω)
0.025
0.020 012345678910
ID=3A
VGS - Gate-to-Source V oltage (V)
Gate Charge
5
VDS= 10 V I
= 3 A
D
4
On-Resistance vs. Junction T emperature
2.0 VGS = 10V
1.8 I
= 3A
DS
1.6
1.4
1.2
1.0
(Normalized)
0.8
0.6
RDS(on)-On-Resistance
0.4
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
600
500
RON@TJ = 25°C: 31m
Capacitance
Ciss
Ω
Frequency= 1MH z
3
2
1
VGS-Gate-Source Voltage (V)
0
0246810
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
400
300
200
Capacitance (pF)
100
0
0 5 10 15 20 25 30
Coss
Crss
VDS - Drain-to-Source V oltage (V)
www.anpec.com.tw4
Page 5
APM3040N
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
Tj=150oC
1
Tj=25oC
IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2 1
Duty Cycle=0.5
D=0.2
0.1
D=0.01
Thermal Impedance
0.01
D=0.1
D=0.05
D=0.02
SINGLE PU LS E
Normalized Effective Transient
1E-3
1E-4 1E-3 0.01 0.1 1 10 100 300
Single Pulse Power
250
200
150
100
Power (W)
50
0
1E-4 1E-3 0.01 0.1 1 10 100 300
Time (sec)
P
DM
t
1
t
2
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
=85oC/W
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
Square Wave Pulse Duration (sec)
www.anpec.com.tw5
Page 6
APM3040N
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
H
L
123
a
E
C
Dim
B1
B
e
e1
A
a
Millim eters Inches
Min. Max. Min. Max.
A 1.40 1.60 0.055 0.063 B 0.40 0.56 0.016 0.022
B1 0.35 0.48 0.014 0.019
C 0.35 0.44 0.014 0.017 D 4.40 4.60 0.173 0.181
D1 1.35 1.83 0.053 0.072
e 1.50 BSC 0.059 BSC
e1 3.00 BSC 0.118 BSC
E 2.29 2.60 0.090 0.102
H 3.75 4.25 0.148 0.167
L 0 .80 1.20 0.031 0.047
α
10
°
10
°
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw6
Page 7
APM3040N
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max . Preheat temperature 125 ± 25°C) Temperature maintained abov e 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature
120 seconds max 60 – 150 seconds 10 –20 seconds 60 seconds 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C 6 °C /second max . 10 °C /second max . 6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness and all bgas
Convection 220 +5/-0 °C Convection 235 +5/- 0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
2.5mm
≥≥≥≥
pkg. thickness < 2.5mm and pkg. volume
350 mm³
≥≥≥≥
pkg. thickness < 2.5mm and pkg. volume < 350mm³
www.anpec.com.tw7
Page 8
APM3040N
R e lia bilit y te s t p r o g r a m
SOLDERA BILITY MIL-STD-883D-2003 HO LT MIL-STD-883D-1005.7 PCT JESD-22-B, A102 TST MIL-STD-883D-1011.9
245°C , 5 SEC 1000 Hrs Bias @ 125 °C 168 Hrs, 100 % RH , 121°C
-65°C ~ 150°C, 200 Cycles ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V La tc h -Up JESD 7 8 10 ms , Itr > 100mA
Test item Method Description
Carrier Tape
W
E
F
Po
P
P1
Ao
D
Bo
D1
t
Ko
T2
J
C
A
B
T1
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw8
Page 9
APM3040N
Application A B C J T1 T2 W P E
178 ±1 70 ± 2 13.5 ± 0.15 3 ± 0.15 14 ± 2 1.3 ± 0.3
SOT-89
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.05 1.5± 0.1 1.5± 0.1 4.0 ± 0.1 2.0 ± 0.1 4.8 ± 0.1 4.5± 0.1 1.80± 0.1 0.3±0.013
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 89
12 9.3 1000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, T aiwan, R.O.C. T el : 886-3-5642000 Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. T el : 886-2-89191368 Fax : 886-2-89191369
12 + 0.3
12 - 0.1
8 ± 0.1 1.75± 0.1
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003
www.anpec.com.tw9
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