Datasheet APM3023NVC-TR, APM3023NUC-TR, APM3023NFC-TR Datasheet (ANPEC)

APM3023N

N-Channel Enhancement Mode MOSFET

Features

• 30V/30A, R

R

••

•

Super High Dense Cell Design

••

••

• High Power and Current Handling Capability

••

••

• TO-252.TO-220 and SOT-223 Packages

••

=15mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=5V

DS(ON)

Pin Description

Top View of T O-252

Applications

• Switching Regulators

• Switching Converters

Ordering and Marking Information

APM 3023N

Handling Code
Tem p. Range
Package Code

Package Code

U : TO-252 V : S O T -22 3 F : T O -2 20

Operating Junction Tem p. Range

C : -55 to 150 C

Handling Code

TR : Tape & Reel

123

G DS

TO-220 Package

°

123

SDG

Top View of SOT-223

3
2
1

S
D

G

APM 3023N U /F:
:

APM3023N V :

APM 3023N
XXXXX

APM 3023N
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 30
Maximum Drain Current – Pulsed 70

Parameter Rating Unit

XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

- Da te C o d e

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

www.anpec.com.tw1

APM3023N

Absolute Maximum Ratings (Cont.) (T

Symbol

Parameter Rating Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

Electrical Characteristics (T

Maximum Power Dissipation

D

T

=100°C

A

Maximum Junction Temperature

J

Storage Temperature Range -55 to 150 °C

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=15A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

VDS=24V , VGS=0V 1
V

DS

V

DS=VGS

V

GS

VGS=10V , IDS=20A
V

GS

V

DS

V

GS

Turn-on Delay Time

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall T ime

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

V

DD

V

GEN

V

GS

V

DS

Frequency=1.0MHz

=0V , IDS=250µA

=24V, VGS=0V, Tj= 55°C

, IDS=250µA

=±20V , VDS=0V

=5V , I

DSs

=10A

=15V , IDS= 10A
=5V ,

=15V , IDS=2A ,

=10V , RG=6

=0V
=15V

TO-252/TO-220 62.5

SOT-223 3

TO-252/TO220 25

SOT-223 1.2

150 °C

APM3023N

Min. Typ. Max.

30 V

11.52

15 20
22 28

0.7 1.3

15 20

5.8

3.8
11 18
17 26

Ω

37 54
20 30

1200

220
100

±

5

100

W

W

Unit

m

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

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APM3023N

Typical Characteristics

Output Characteristics

30

VGS=5,6,7,8,9,10V

25

20

15

10

-Drain Current (A)

DS

I

5

0

0246810

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

1.0

VGS=4V

VGS=3V

IDS=250µA

Transfer Characteristics

40

VDS=10V

30

20

-Drain Current (A)

10

DS

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

0.030

VGS=5V

0.8

(Normalized)

0.6

GS(th)-Threshold Voltage (V)

V

0.
4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

VGS=10V

IDS-Drain Current (A)

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APM3023N

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

45
40
35
30
25
20

-On-Resistance (Ω)

15
10

DS (ON)

R

5
0

345678910

Gate Voltage (V)

Gate Charge

IDS=20A

10

VDS=15V

IDS=10A

8

On-Resistaence vs. Junction Temperature

1.6

VGS=10V
ID=12A

1.4

1.2

1.0

(Normalized)

-On-Resistance (Ω)

DS(ON)

0.8

R

0.6

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

2000

1000

Ciss

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

0 5 10 15 20 25 30

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

500

Coss

Crss

C-Capacitance (pF)

100

Frequency=1MHz

0.1 1 10

VDS-Drain-to-Source Voltage (V)

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30

APM3023N

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

100

10

TJ=125°C

1

-Source Current (A)

SD

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

TJ=-55°C

VSD-Source to Drain Voltage

Single Pulse Power

3000

SOT-223

Single Pulse Power

TO-252 / TO-220

3000

2500

2000

1500

Power (W)

1000

500

0

10-510-410-310-210

-1

Time (sec)

10010

1

2500

2000

1500

Power (W)

1000

500

0

10-510-410-310-210

Time (sec)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

-1

10010

1

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APM3023N

Typical Characteristics (Cont.)

Normalized Thermal Transient Impedence, Junction to Ambient

TO-252 / TO-220

2

1

Duty Cycle=0.5

D=0.2
D=0.1
D=0.05

0.1

D=0.02

0.01

D=0.01

SINGLE PULSE

-5

10

-4

10

-3

10

Thermal Impedance

Normalized Effective Transient

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

-2

10

-1

10

0

10

1

10

Normalized Thermal Transient Impedence, Junction to Ambient

2

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05
D=0.02

Thermal Impedance

D=0.01

SINGLE PULSE

Normalized Effective Transient

0.01

-5

10

-4

10

Square Wave Pulse Duration (sec)

-3

10

Square Wave Pulse Duration (sec)

-2

10

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=42°C/W

3.TJM-TA=PDMZthJA

-1

10

SOT-223

0

10

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

www.anpec.com.tw6

APM3023N

Package Information

TO-252( Reference JEDEC Registration TO-252)

E

b2

A

C1

L2

D

H

L1

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0. 035

b2 5.207 5.4 61 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6. 22 0.210 0.245
E 6.35 6.73 0.250 0.265

e1 3.96 5.1 8 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020
L1 0.64 1.0 2 0.025 0.040
L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

Min. Max. Min. Max .

Millimeters Inche s

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APM3023N

Package Information

SOT-223( Reference JEDEC Registration SOT-223)

D

B1

H E

K

e

e1

B

A

A1

b

a

c

L

Millimeters InchesDim

Min. Max. Min. Max.

A 1.50 1.80 0.06 0.07

A1 0.02 0.08

B 0.60 0.80 0.02 0.03

B1 2.90 3.10 0.11 0.12

c 0.28 0.32 0.01 0.01

D 6.30 6.70 0.25 0.26

E 3.30 3.70 0.13 0.15
e 2.3 BSC 0.09 BSC

e1 4.6 BSC 0.18 BSC

H 6.70 7.30 0.26 0.29

L 0.91 1.10 0.04 0.04
K 1.50 2.00 0.06 0.08

α
β

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

0

°

13

°

10

°

0

°

13

10

°

°

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APM3023N

TO-220 ( Reference JEDEC Registration TO-220)

D

Q

R

E

L1

b

e

b1

e1

H1

A

F

L

c

J1

Millimeters Inches

Dim

Min. Max. Min. Max.

A 3.56 4.83 0.14 0 0 .190

b1 1.14 1.78 0.045 0.070

b 0.51 1.14 0.020 0 .045

c 0.31 1.14 0.01 2 0.045

D 14.23 16.51 0.560 0.650

e 2.29 2.79 0.090 0.110

e1 4.83 5.33 0.190 0.210

E 9.65 10.67 0.380 0.420
F 0.51 1.40 0.020 0.055

H1 5.84 6.86 0.230 0.27 0

J1 2.03 2.92 0.080 0.115

L 12.7 14.73 0.500 0.580

L1 3.65 6.35 0.143 0.250

R 3.53 4.09 0.139 0 .161
Q 2.54 3.43 0.100 0.135

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

www.anpec.com.tw9

APM3023N

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM3023N

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Applicatio n

A B C J T1 T2 W P E

330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5

TO-252

F D D1 Po P1 Ao Bo Ko t

7.5 ± 0.1 1.5 +0 .1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Applicatio n

A B C J T1 T2 W P E

330±162±1.5

SOT-223

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

12.75

0.15

T1

16.4 + 0.3

-0.2

±

2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1

2.5± 0.5

16+ 0.3

- 0.1

8 ± 0.1 1.75± 0.1

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APM3023N

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252

SOT- 223

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

16 13.3 2500
12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003

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