Datasheet APM3020PUC-TR Datasheet (ANPEC)

APM3020P

P-Channel Enhancement Mode MOSFET

Features

• -30V/-11A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• TO-252 Package

••

= 17mΩ(typ.) @ VGS = -10V

DS(ON)

= 24mΩ(typ.) @ VGS = -5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

APM3020P

Handling Code

Temp. Range

Package Code

Package Code
U : T O -2 52
Operating Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : T ube
TR : T ape & Ree l

G DS

Top View of TO-252

APM 3020P U :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

D

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

Drain-Source Voltage -30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous -40

Maximum Drain Current – Pulsed -70

Maximum Power Dissipation

APM 3020P
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

V

A

TA=25 ºC 50P

W

T

=100 ºC 20

A

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APM3020P

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

T

J

T

STG

R

θJC

Electrical Characteristics (T

Symbol Parameter Test Condition

Maximum Junction Temperature 150 ºC

Storage Temperature Range -55 to 150 ºC

Thermal Resistance – Junction to Case 2.5

= 25°C unless otherwise noted)

A

APM3020P

Min. Typ. Max.

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown Voltage VGS=0V , IDS=-250A -30 V

DSS

Zero Gate Voltage Drain Current VDS=-24V , VGS=0V -1 µA

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

-1 -3

Gate Leakage Current VGS=±20V , VDS=0V

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-11A, VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

VGS=-10V , IDS=-11A

V

=-5V , IDS=-7A

GS

V

=-15V , VGS=-4.5V,

DS

=-4.6A

I

DS

V

=-15V , IDS=-6A ,

DD

V

=-10 V , RG=1

GEN

R

=2.5

Ω

L

=0V

V

GS

=-25V

V

DS

Frequency=1.0MHz

17 20

24 30

-1.3 -1.3

23 30

10

9

16 30

Ω

22 30

75 120

31 80

3720

580

245

±

100

ºC/W

Unit

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

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APM3020P

Typical Characteristics

Output Characteristics

50

VGS=4,5,6,7,8,9,10V

40

30

20

-Drain Current (A)

DS

-I

10

0

0246810

-VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

VGS=3V

VGS=2.5V

-IDS=250µA

Transfer Characteristics

50

40

30

20

-Drain Current (A)

DS

-I

10

0

012345

-VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.035

TJ=125°C

TJ=25°C

TJ=-55°C

1.25

1.00

0.75

(Normalized)

0.50

-Threshold Voltage (V)

GS(th)

0.25

-V

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

0.030

-VGS=5V

0.025

0.020

-On-Resistance (Ω)

0.015

DS(ON)

R

0.010

0.005
0 5 10 15 20 25 30

-VGS=10V

-IDS-Drain Current (A)

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APM3020P

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage

0.15

0.12

0.09

0.06

-On-Resistance (Ω)

DS (ON)

0.03

R

0.00
0246810

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VDS=15V

-IDS=4.6A

8

6

4

-Gate-to-Source Voltage (V)

2

GS

-V

0

0 10203040

-IDS=7A

On-Resistaence vs. Junction Temperature

0.030

-VGS=10V

-IDS=11A

0.025

0.020

0.015

(Normalized)

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

3000

2500

Ciss

2000

1500

1000

C-Capacitance (pF)

500

0

0 5 10 15 20 25 30

Coss

Crss

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

-VDS-Drain-to-Source Voltage (V)

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APM3020P

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

50

10

1

-Source Current (A)

SD

-I

0.1

TJ=150°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

-VSD-Source-to-Drain Voltage (V )

Normalized Transient Thermal Transient Impedence, Junction to Ambient

1

TJ=25°C

Single Pulse Power

3000

2500

2000

1500

Power (W)

1000

500

0
10-510-410-310-210-110010

1

Time (sec)

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

0.01
10

-5

D=0.02

D=0.01

SINGLE PULSE

-4

10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

10

-3

10

-2

10

Square Wave Pulse Duration (sec)

=50°C/W

thJA

thJA

-1

10

0

10

1

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APM3020P

Packaging Information

TO-252( Reference JEDEC Registration TO-252)

E

b2

A

C1

L2

D

H

L1

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

Min. Max. Min. Max.

Millimeters Inches

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APM3020P

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM3020P

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Application

A B C J T1 T2 W P E

330 ±3100 ± 213 ± 0. 5 2 ± 0.5

TO-252

F D D1 Po P1 Ao Bo Ko t

7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

16.4 + 0.3

-0.2

T1

2.5± 0.5

16+ 0.3

- 0.1

8 ± 0.1 1.75± 0.1

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APM3020P

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252 16 13.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : [phone]
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : [phone]
Fax : [phone]

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2002

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