Datasheet APM3011NUC-TU, APM3011NUC-TR, APM3011NGC-TU, APM3011NGC-TR, APM3011NFC-TU Datasheet (ANPEC)

APM3011N

N-Channel Enhancement Mode MOSFET

Features

• 30V/60A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• TO-220, TO-252 and TO-263 Packages

••

DS(ON)

=9mΩ(typ.) @ VGS=10V

DS(ON)

=14mΩ(typ.) @ VGS=5V

DS(ON)

Applications

Pin Description

Top View of TO-220 , TO-252 and TO-263

• Power Management in Desktop Computer or

DC/DC Converters Systems.

Ordering and Marking Information

APM3011N

Handling Code

Temp. Range

Package Code

Package Code
F : TO-220 U :TO-252 G : TO-263
Temp. Range
C : 0 to 70 C
Handling Code
TU : Tube
TR : Tape & Reel

°

APM3011N G/U/F :

APM3011N
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 60

Maximum Drain Current – Pulsed 120

Parameter Rating Unit

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw1

APM3011N

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

Maximum Power Dissipation

TA=25°C

TO-252 50

TO-263 62.5

TO-252 20

=100°C

T

T

J

T

STG

R

JA

θ

R

JC

θ

Electrical Characteristics (T

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Thermal Resistance – Junction to Case 2.5

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

A

TO-263 25

APM3011N

Min.

Typ. Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

a

V

Sd

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

T

r

t

d(OFF)

T

f

C

iss

C

oss

C

rss

Drain-Source Breakdown

Zero Gate Voltage Drain
Current

Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

VGS=0V, IDS=250µA
VDS=24V , VGS=0V 1
V

=24V, VGS=0V, Tj= 55°C

DS

V
V

, IDS=250µA

DS=VGS

=±20V, VDS=0V

GS

VGS=10V, IDS=30A

=5V, IDS=15A

V

GS

Diode Forward Voltage ISD=24A, VGS=0V

b

Total Gate Charge
Gate-Source Charge

V

=15V, IDS=30A

DS

V

=4.5V

GS

Gate-Drain Charge
Turn-on Delay Time

=15V, IDS=1A,

V

Turn-on Rise Time
Turn-off Delay Time

DD

=10V, RG=0.2

V

GEN

Turn-off Fall Time

=0V

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

V

GS

V

=15V

DS

Frequency =1.0MHz

Ω

30 V

5

13

100

±

911

14 18

0.6 1.2

22 28

12.8
5
914
612

30 45

816

2000

420
210

W

W

°

°

C/W

°

C/W

°

Unit

m

C

C

µ

V

nA

V

nC

ns

pF

A

Ω

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw2

APM3011N

Typical Characteristics

Output Characteristics

70

60

50

40

30

-Drain Current (A)

20

DS

I

10

0

012345678910

VG=4,4.5,6,8,10V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

Transfer Characteristics

50

VDS=10V

40

30

20

-Drain Current (A)

DS

I

10

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.020

VGS=5V

0.016

0.8

-Variance (V)

GS(th)

V

0.6

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

0.012

0.008

VGS=10V

-On-Resistance (Ω)

DS(ON)

0.004

R

0.000
0 102030405060

IDS-Drain Current (A)

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APM3011N

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

0.035

IDS=30A

0.030

0.025

0.020

0.015

-On-Resistance (Ω)

0.010

DS (ON)

R

0.005

0.000
345 6 78 910

Gate Voltage (V) Tj-Junction Temperature (°C)

Gate Charge

10

VDS=15V

IDS=20A

8

1.6

VGS=10V

I

1.4

1.2

1.0

0.8

-On Resistance (Ω) (Normalized)

DS(ON)

0.6

R

-50 -25 0 25 50 75 100 125 150

DS

Capacitance Characteristics

3000

2000

Ciss

=30A

6

4

-Gate-to-Source Voltage (V)

2

GS

V

0

0 1020304050

QG-Total-Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

1000

Coss

500

C-Capacitance (pF)

Crss

Frequency=1MHz

100

0.1 1 10

VDS-Drain-to-Source Voltage (V)

30

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APM3011N

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

100

10

1

TJ=125°C

-Source Current (A)

SD

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

TJ=-55°C

VSD-Source to Drain Voltage Time (sec)

3000

2500

2000

1500

Power (W)

1000

500

0

10

Transient Thermal Response Curve

Single Pulse Power

-

410-5

-

3

10

-

10

2

10-1

0

10

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

D=0.01

Normalized Effective Transient

0.01

-5

10

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

10

-4

SINGLE PULSE

Square Wave Pulse Duration (sec)

10

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

-3

10

-2

10

thJA

-1

=62.5°C/W

thJA

10

0

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APM3011N

Package Informaion

TO-252( Reference JEDEC Registration TO-252)

E

b2

A

C1

L2

D

H

L1

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

Min. Max. Min. Max.

Millimeters Inches

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APM3011N

Packaging Information Cont.

TO-263 ( Reference JEDEC Registration TO-263)

E

L2

D

L

L3

A

c2

Φ 1

L4

R

L1

DETAIL "A"ROTED

E1

TERMINAL 4

D1

c

Millimeters Inches

Dim

A

Min. Max. Min. Max.

4.06 4.83

0.160 0.190

b 0.51 1.016 0.02 0.040

b2 1.14 1.651 0.045 0.065

c

0.38 TYP.

0.015 TYP.

c2 1.14 1.40 0.045 0.055

D 8.64 9.65 0.340 0.380

E

9.65 10.54

0.380 0.415

L 14.60 15.88 0.575 0.625
L1 2.24 2.84 0.090 0.110
L2

1.02 2.92

0.040 0.112

L3 1.20 1.78 0.050 0.070

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw7

APM3011N

Package Information Cont.

TO-220 ( Reference JEDEC Registration TO-220)

D

Q

R

E

L1

b

e

b1

e1

H1

A

F

L

c

J1

Millimeters Inches

Dim

Min. Max. Min. Max.

A 3.56 4.83 0.140 0.190

b1 1.14 1.78 0.045 0.070

b 0.51 1.14 0.020 0.045

c 0.31 1.14 0.012 0.045
D 14.23 16.51 0.560 0.650
e 2.29 2.79 0.090 0.110

e1 4.83 5.33 0.190 0.210

E 9.65 10.67 0.380 0.420
F 0.51 1.40 0.020 0.055

H1 5.84 6.86 0.230 0.270

J1 2.03 2.92 0.080 0.115

L 12.7 14.73 0.500 0.580

L1 3.65 6.35 0.143 0.250

R 3.53 4.09 0.139 0.161

Q 2.54 3.43 0.100 0.135

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

www.anpec.com.tw8

APM3011N

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)

°

Temperature maintained above 183
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

C

120 seconds max.
60 ~ 150 seconds

10 ~ 20 seconds

°

220 +5/-0

°

C /second max. 10°C /second max.

6
6 minutes max.

C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C

60 seconds

VPR

Time

Package Reflow Conditions

pkg. thickness
and all bags

Convection 220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

2.5mm

≥≥≥≥

°

C IR/Convection 235 +5/-0

pkg. thickness < 2.5mm and

pkg. volume

≥≥≥≥

350 mm

pkg. thickness < 2.5mm and pkg.

volume <

°

Convection 235 +5/-0

VPR 235 +5/-0

°

C

C

°

C

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APM3011N

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimension

t

E

W

Application

TO-252 330±3 100 ± 2 13 ± 0. 5 2 ± 0.5

Application

A B C J T1 T2 W P E

F D D1 Po P1 Ao Bo Ko t

F

Po

Ao

J

A

P1

P

D

D1

C

16.4 +0.3

-0.2

T2

T1

2.5± 0.5

B

Bo

Ko

16 + 0.3

16 - 0.1

8 ± 0.1 1.75± 0.1

TO-252

Application

TO-263 380±3 80 ± 2 13 ± 0. 5 2 ± 0.5 24 ± 42± 0.3

Application

TO-263 11.5 ± 0.1

7.5 ± 0.1 1.5± 0.1

A B C J T1 T2 W P E

F D D1 Po P1 Ao Bo Ko t

1.5 +0.1

1.5+ 0.25

1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013

4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

24 + 0.3

- 0.1

16 ± 0.1 1.75± 0.1

(mm)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

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APM3011N

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252
TO- 263

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

16 13.3 2500
24 21.3 1000

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002

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