Datasheet APM3007NUC-TU, APM3007NUC-TR, APM3007NGC-TU, APM3007NGC-TR, APM3007NFC-TU Datasheet (ANPEC)

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM3007N

Handling Code

Temp. Range

Package Code

Package Code
F : T O -22 0 G : TO -2 63 U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 12 5 C
Handling Code
T U : Tu be
TR : Tape & Reel

°°°°

APM 3007N F/G/U :

APM3007N
XXXXX

- Da te C od e

XXXXX

Pin DescriptionFeatures

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 30V / 80A , R

DS(ON)

= 5.5mΩ(typ.) @ VGS= 10V

R

DS(ON)

= 8.5mΩ(typ.) @ VGS= 4.5V

• Super High Dense Advanced Cell Design for

Extremely Low R

DS(ON)

• Reliable and Rugged

• TO-220 , TO-252 and TO-263 Packages

• Power Management in Desktop Computer or

DC/DC Converters.

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 70

I

DM

Maximum Drain Current – Pulsed 130

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Top View of TO-220, TO-252 and TO-263

Ordering and Marking Information

G

DS

123

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw2

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

APM3007N

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

30 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

13

V

I

GSS

Gate Leakage Current

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=40A

5.5 7

R

DS(ON)

a

Drain-Source On-state

Resistance

V

GS

=4.5V , IDS=20A

8.5 10

m

Ω

V

SD

a

Diode Forward Voltage ISD=35A , VGS=0V

0.6 1.3

V

Dynamic

b

Q

g

Total Gate Charge

25 30

Q

gs

Gate-Source Charge

12

Q

gd

Gate-Drain Charge

V

DS

=15V , IDS= 40A

V

GS

=4.5V ,

8

nC

t

d(ON)

Turn-on Delay Time

13 20

T

r

Turn-on Rise Time

915

t

d(OFF)

Turn-off Delay Time

43 66

T

f

Turn-off Fall Time

V

DD

=15V , IDS=1A ,

V

GEN

=10V , RG=0.2

Ω

14 28

ns

C

iss

Input Capacitance

3000

C

oss

Output Capacitance

660

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

330

pF

Symbol Parameter Rating Unit

TO-252 50

TA=25°C

TO-263 62.5

TO-252 20

P

D

Maximum Power Dissipation

TA=100°C

TO-263 25

W

TJ,T

STG

Maximum Operating and Storage Junction Temperature -55 to 150

°

C

TO-252 50

R

θ

JA

Thermal Resistance – Junction to Ambient

TO-263 60

°

C/W

TO-252 2.5

R

θ

JC

Thermal Resistance – Junction to Case

TO-263 2

°

C/W

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw3

Typical Characteristics

012345678910

0

10

20

30

40

50

60

70

80

1.0 1.5 2.0

2.5 3.0

3.5

4.0

0

12

24

36

48

60

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

Threshold Voltage vs. Junction Temperature

Tj-Junction Temperature (°C)

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

0 102030405060708090100

0.000

0.002

0.004

0.006

0.008

0.010

VGS=10V

VGS=4.5V

IDS=250µA

VDS=10V

TJ=125°C

TJ=25°C

TJ=-55°C

VGS=4,4.5,6,8,10V

VGS=2.5V

VGS=3V

VGS(th)-Threshold Voltage (V)

(Normalized)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw4

0 102030405060

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

2

3

4

5

6

7

8

Typical Characteristics Cont.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

R

DS(ON)

-On Resistance (Ω)

(Normalized)

R

DS (ON)

-On-Resistance (Ω)

Gate Voltage (V) Tj-Junction Temperature (°C)

Gate Charge

QG-Total Gate Charge (nC)

V

GS

-Gate-to-Source Voltage (V)

345678910

0.000

0.005

0.010

0.015

0.020

0.025

0.030

IDS=40A

VGS=10V

IDS=40A

VDS=10V

IDS=40A

On-Resistaence vs. Junction Temperature

R

DS(ON)

-On Resistance (Ω)

Tj-Junction Temperature (°C)

VGS=10V

IDS=40A

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw5

10

-5

10

-4

10-310

-2

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0

500

1000

1500

2000

2500

3000

0.0 0.3 0.6 0.9 1.2 1.5

0.1

1

10

100

Source-Drain Diode Forward Voltage

I

SD

-Source Current (A)

VSD-Source to Drain Voltage (V)

Typical Characteristics Cont.

TJ=-55°C

TJ=25°C

TJ=125°C

Time (sec)

Single Pulse Power

Power (W)

Time (sec)

Single Pulse Power

Power (W)

TO-252

TO-263

100

1000

500

4000

30

0.1 1 10

Capacitance Characteristics

V

DS

-Drain-to-Source Voltage (V)

C-Capacitance (pF)

Crss

Coss

Ciss

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

0.1

1

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.01

0.1

1

Typical Characteristics Cont.

Square Wave Pulse Duration (sec)

Normalized Transient Thermal Transient Impedence, Junction to Ambient

D=0.1

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=62.5°C/W

3. TJM-TA=PDMZ

thJA

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

TO-263

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=50°C/W

3. TJM-TA=PDMZ

thJA

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.2

Duty Cycle=0.5

TO-252

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw7

Package Informaion

TO-252( Reference JEDEC Registration TO-252)

Millimeters Inches

Dim

Min. Max. Min. Max.

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

L2

D

L1

b

b2

E

C1

A

H

L

C

A1

e1

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw8

TO-263 ( Reference JEDEC Registration TO-263)

Millimeters Inches

Dim

Min. Max. Min. Max.

A

4.06 4.83

0.160 0.190

b 0.51 1.016 0.02 0.040

b2 1.14 1.651 0.045 0.065

c

0.38 TYP.

0.015 TYP.

c2 1.14 1.40 0.045 0.055

D 8.64 9.65 0.340 0.380
E

9.65 10.54

0.380 0.415

L 14.60 15.88 0.575 0.625
L1 2.24 2.84 0.090 0.110
L2

1.02 2.92

0.040 0.112

L3 1.20 1.78 0.050 0.070

E

D

L

L2

L3

D1

E1

TERMINAL 4

c

A

c2

R

L1

L4

Φ 1

DETAIL "A"ROTED

Packaging Information Cont.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw9

Package Information Cont.

TO-220 ( Reference JEDEC Registration TO-220)

Q

D

R

E

F

J1

e

e1

b1

L1

A

c

b

H1

L

Millimeters Inches

Dim

Min. Max. Min. Max.

A 3.56 4.83 0.140 0.190

b1 1.14 1.78 0.045 0.070

b 0.51 1.14 0.020 0.045
c 0.31 1.14 0.012 0.045

D 14.23 16.51 0.560 0.650

e 2.29 2.79 0.090 0.110

e1 4.83 5.33 0.190 0.210

E 9.65 10.67 0.380 0.420
F 0.51 1.40 0.020 0.055

H1 5.84 6.86 0.230 0.270

J1 2.03 2.92 0.080 0.115

L 12.7 14.73 0.500 0.580

L1 3.65 6.35 0.143 0.250

R 3.53 4.09 0.139 0.161
Q 2.54 3.43 0.100 0.135

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw10

Reference JEDEC Standard J-STD-020A APRIL 1999

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)

120 seconds max.

Temperature maintained above 183

°

C

60 ~ 150 seconds

Time within 5°C of actual peak temperature

10 ~ 20 seconds

60 seconds

Peak temperature range

220 +5/-0

°

C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C

Ramp-down rate

6

°

C /second max. 10°C /second max.

Time 25°C to peak temperature

6 minutes max.

pkg. thickness

≥≥≥≥

2.5mm

and all bags

pkg. thickness < 2.5mm and

pkg. volume

≥≥≥≥

350 mm

pkg. thickness < 2.5mm and pkg.

volume <

Convection 220 +5/-0°C

Convection 235 +5/-0

°

C

VPR 215-219°C

VPR 235 +5/-0

°

C

IR/Convection 220 +5/-0

°

C IR/Convection 235 +5/-0

°

C

Classification Reflow Profiles

Package Reflow Conditions

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw11

Application

A B C J T1 T2 W P E

TO-252 330±3 100 ± 2 13 ± 0. 5 2 ± 0.5

16.4 +0.3

-0.2

2.5± 0.5

16 + 0.3

16 - 0.1

8 ± 0.1 1.75± 0.1

Application

F D D1 Po P1 Ao Bo Ko t

TO-252

7.5 ± 0.1 1.5± 0.1

1.5+ 0.25

4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Application

A B C J T1 T2 W P E

TO-263 380±3 80 ± 2 13 ± 0. 5 2 ± 0.5 24 ± 42± 0.3

24 + 0.3

- 0.1

16 ± 0.1 1.75± 0.1

Application

F D D1 Po P1 Ao Bo Ko t

TO-263 11.5 ± 0.1

1.5 +0.1

1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013

(mm)

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Carrier Tape & Reel Dimension

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Copyright  ANPEC Electronics Corp.
Rev. A.4 - July., 2002

APM3007N

www.anpec.com.tw12

Cover Tape Dimensions

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252

16 13.3 2500

TO- 263

24 21.3 1000