Datasheet APM3005NFC-TR, APM3005NUC-TU, APM3005NGC-TU, APM3005NGC-TR Datasheet (ANPEC)

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM 3005N

Handling Code
Temp. Range
Package Code

Package Code
F : T O -2 2 0 U : T O-25 2 G : T O -2 6 3
Operating Junction Temp. Range
C : -5 5 to 1 2 5 C
Handling Code
T U : Tu b e
TR : Tape & Reel

°°°°

APM 3005N :

APM3005N
XXXXX

- Da te C o d e

XXXXX

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 30V / 80A , R

DS(ON)

= 4mΩ(typ.) @ VGS= 10V

R

DS(ON)

= 7mΩ(typ.) @ VGS= 4.5V

• Super High Dense Advanced Cell Design for

Extremely Low R

DS(ON)

• Reliable and Rugged

• TO-220, TO-252 and TO-263 Packages

• Power Management in Desktop Computer or

DC/DC Converters.

T op View of T O-220, TO-252 and T O-263

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 80

I

DM

Maximum Drain Current – Pulsed 160

A

G

DS

123

G

S

D

N-Channel MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw2

APM3005N

Symbol Parameter Test Condition

Min. T

y

p. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

30 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V , VGS=0V 1 µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

11.52

V

I

GSS

Gate Leakage Current

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=80A

45.4

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=4.5V , IDS=70A

78

m

Ω

V

SD

a

Diode Forward Voltage ISD=30A , VGS=0V

0.85 1.3

V

Dynamic

b

Q

g

Total Gate Charge

28 32

Q

gs

Gate-Source Charge

12.8

Q

gd

Gate-Drain Charge

VDS=15V , IDS= 80A
V

GS

=5V ,

21.2

nC

t

d(ON)

Turn-on Delay Time

13 20

T

r

Turn-on Rise Time

915

t

d(OFF)

Turn-off Delay Time

43 66

T

f

Turn-of f Fall Time

V

DD

=15V , IDS=1A ,

V

GEN

=10V , RG=0.2

Ω

14 28

ns

C

iss

Input Capacitance

4700

C

oss

Output Capacitance

930

C

rss

Reverse Transfer Capacitance

VGS=0V
V

DS

=15V

Frequency=1.0MHz

280

pF

Symbol Parameter Rating Unit

TO-252 50

TA=25°C

TO-263 62.5

W

TO-252 20

P

D

Maximum Power Dissipation

T

A

=100°C

TO-263 25

W

TJ,T

STG

Maximum O p era t ing and Storage Junction Temperature -55 to 150

°

C

TO-252 50

R

θ

JA

Thermal Resistance – Junction to Ambient

TO-263 60

°

C/W

TO-252 2.5

R

θ

JC

Thermal Resistance – Junction to Case

TO-263 2

°

C/W

* Surface Mounted on FR4 B oard, t ≤ 10 sec.

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw3

0 20 40 60 80 100 120

0.000

0.002

0.004

0.006

0.008

0.010

Typical Characteristics

012345

0

20

40

60

80

Output Characteristics

V

DS

-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

VGS=3.5V

0123456

0

20

40

60

80

100

VGS-Gate-to-Source Voltage (V)

Transfer Characteristics

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=-55°C

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Threshold Voltage vs. Junction Temperature

Tj-Junction T emperature (°C)

V

GS(th)

-Threshold Voltage (V)

(Normalized)

IDS=250µA

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw4

0 102030405060708090

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Typical Characteristics (Cont.)

Gate Charge

QG-T otal Gate Charge (nC)

V

GS

-Gate-to-Source Voltage (V)

VDS=15V

IDS=80A

0246810

0.000

0.005

0.010

0.015

0.020

0.025

IDS=60A

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

R

DS (ON)

-On-Resistance (Ω)

Tj-Junction T emperature (°C)

On-Resistaence vs. Junction T emperature

R

DS(ON)

-On Resistance (mΩ)

VGS=10V

IDS=60A

-50 -25 0 25 50 75 100 125 150

0

2

4

6

8

10

Tj-Junction T emperature (°C)

On-Resistaence vs. Junction T emperature

R

DS(ON)

-On Resistance (mΩ)

(Normalized)

VGS=10V

IDS=60A

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw5

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0

500

1000

1500

2000

2500

3000

10-510-410-310-210-110010

1

0

500

1000

1500

2000

2500

3000

Typical Characteristics (Cont.)

0.0 0.3 0.6 0.9 1.2 1.5

0.1

1

10

100

Source-Drain Diode Forward V oltage

I

SD

-Source Current (A)

VSD-Source-to-Drain Voltage (V)

TJ=-55°C

TJ=25°C

TJ=125°C

0 5 10 15 20 25 30

0

1000

2000

3000

4000

5000

6000

7000

Capacitance Characteristics

VDS-Drain-to-Source Voltage (V)

C-Capacitance (pF)

Crss

Coss

Ciss

Time (sec)

Single Pulse Power

Power (W)

TO-263

Time (sec)

Single Pulse Power

Power (W)

TO-252

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.01

0.1

1

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

0.1

1

Typical Characteristics (Cont.)

Square Wave Pulse Duration (sec)

Normalized Transient Thermal Transient Impedence, Junction to Ambient

D=0.1

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Transient Thermal Transient Impedence, Junction to Ambient

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=62.5°C/W

3. TJM-TA=PDMZ

thJA

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

TO-263

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=50°C/W

3. TJM-TA=PDMZ

thJA

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.2

Duty Cycle=0.5

TO-252

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw7

Package Information

TO-220 ( Reference JEDEC Registration TO-220)

Q

D

R

E

F

J1

e

e1

b1

L1

A

c

b

H1

L

Millimeters Inches

Dim

Min. Max. Min. Max.

A 3.56 4.83 0.140 0 .19 0

b1 1.14 1.78 0.045 0.070

b 0.51 1.14 0.020 0.045
c 0.31 1.14 0.012 0.045

D 14.23 16.51 0.560 0.650

e 2.29 2.79 0.090 0.110

e1 4.83 5.33 0.190 0.210

E 9.65 10.67 0.380 0.420
F 0.51 1.40 0.02 0 0.055

H1 5.84 6.86 0.230 0.270

J1 2.03 2.92 0.080 0.115

L 12.7 14.73 0.500 0.580

L1 3.65 6.35 0.143 0.250

R 3.53 4.09 0.139 0.1 6 1

Q 2.54 3.43 0 .100 0.135

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw8

Package Informaion (Cont.)

TO-252( Reference JEDEC Registration TO-252)

Millimeters Inches

Dim

Min. Max. Min. Max .

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.0 20 0.035

b2 5.207 5.4 61 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.2 2 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0. 156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020
L1 0.64 1.02 0. 025 0.040
L2 0.89 2.032 0. 035 0.080

L2

D

L1

b

b2

E

C1

A

H

L

C

A1

e1

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw9

TO-263 ( Reference JEDEC Registration TO-263)

Millimeters Inches

Dim

Min. Max. Min. Max.

A

4.06 4.83

0.160 0.190

b 0.51 1.016 0.02 0.040

b2 1.14 1.651 0.045 0.065

c

0.38 TYP.

0.015 TYP.

c2 1.14 1.40 0.045 0.055

D 8.64 9.65 0.340 0.380
E

9.65 10.54

0.380 0.415

L 14.60 15.88 0.575 0.625
L1 2.24 2.84 0.090 0.110
L2

1.02 2.92

0.040 0.112

L3 1.20 1.78 0.050 0.070

E

D

L

L2

L3

D1

E1

TERMINAL 4

c

A

c2

R

L1

L4

Φ 1

DETAIL "A"ROTED

Package Information (Cont.)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw10

Reference JEDEC Standard J-STD-020A APRIL 1999

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)

120 seconds max.

Temperature maintained above 183

°

C

60 ~ 150 seconds

Time within 5°C of actual peak temperature

10 ~ 20 seconds

60 seconds

Peak temperature range

220 +5/-0

°

C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C

Ramp-down rate

6

°

C /second max. 10°C /second max.

Time 25°C to peak temperature

6 minutes max.

pkg. thickness

≥≥≥≥

2.5mm

and all bags

pkg. thickness < 2.5mm and

pkg. volume

≥≥≥≥

350 mm

pkg. thickness < 2.5mm and pkg.

volume <

Convection 220 +5/-0°C

Convection 235 +5/-0

°

C

VPR 215-219°C

VPR 235 +5/-0

°

C

IR/Convection 220 +5/-0

°

C IR/Convection 235 +5/-0

°

C

Classification Reflow Profiles

Package Reflow Conditions

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderab ility M eets E IA S pec ification RSI8 6-91 , AN SI/J-ST D- 00 2 C atego ry 3.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw11

Application

A B C J T1 T2 W P E

330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5

16.4 + 0.3

-0.2

2.5± 0.5

16+ 0.3

- 0.1

8 ± 0.1 1.75± 0.1

F D D1 Po P1 Ao Bo Ko t

TO-252

7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Application

A B C J T1 T2 W P E

380±3 80 ± 2 13 ± 0. 5 2 ± 0.5 24 ± 42± 0.3

24 + 0.3

- 0.1

16 ± 0.1 1.75± 0.1

F D D1 Po P1 Ao Bo Ko t

TO-263

11.5 ± 0.1

1.5 +0.1

1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013

(mm)

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Carrier Tape & Reel Dimension

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jan., 2003

APM3005N

www.anpec.com.tw12

Cover Tape Dimensions

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252

16 13.3 2500

TO- 263

24 21.3 1000