Datasheet APM2607CC-TR Datasheet (ANPEC)

APM2607

P-Channel Enhancement Mode MOSFET

Features

• -30V/-3A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23-6 Package

••

=100mΩ(typ.) @ VGS=-10V

DS(ON)

=140mΩ(typ.) @ VGS=-4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

D

1

D

2

3

G

D

6

5

D

4

S

Top View of SOT-23-6

G

DSDDD

P-Channel MOSFET

APM2607

Handling Code

Temp. Range

Package Code

APM 2607 C : M07X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous -3

Maximum Drain Current – Pulsed -12

Parameter Rating Unit

Package Code
C : SO T-23-6
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw1

APM2607

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C

T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-24V , VGS=0V -1 µA

DS

V

V

, IDS=-250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=-10V , IDS=-3A

=-4.5V , IDS=-2.5A

V

GS

=-15V , IDS=-3A

V

DS

=-10V

V

GS

=-15V , IDS=-1A ,

V

DD

=-10V , RG=6Ω

V

GEN

=15Ω

R

L

VGS=0V

=-25V

V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2607

Min.

Typ. Max.

-30 V

-1 -1.5 -2

±100

100 120

140 170

-0.7 -1.3

813

1.9

1.1

10 20

820

25 50

515

550

120

75

W

C

°

C

°

C/W

Unit

V

nA

mΩ

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

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APM2607

Typical Characteristics

Output Characteristics

10

-VGS=5,6,7,8,9,10V

8

6

4

-ID-Drain Current (A)

2

0

0246810

-VGS=4V

-VGS=3V

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

-IDS=250uA

Transfer Characteristics

10

8

6

4

-ID-Drain Current (A)

2

0

012345

TJ=125°C

TJ=-55°C

TJ=25°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.30

0.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

0.20

0.15

0.10

0.05

RDS(ON)-On-Resistance (Ω)

0.00
012345678

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

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APM2607

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.5

0.4

0.3

0.2

0.1

RDS(ON)-On-Resistance (Ω)

0.0
0246810

-ID=3A

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VDS=10V

9

-ID=3A

8

7

6

5

4

3

2

-VGS-Gate-Source Voltage (V)

1

0

012345678

Q

G - Gate Charge (nC)

On-Resistance vs. Junction Temperature

2.00

-VGS=10V

-I

D=3A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

800

700

600

500

400

300

Capacitance (pF)

200

100

0

0 5 10 15 20 25 30

Capacitance

Frequency=1MHz

Ciss

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

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APM2607

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

10

1

TJ=150°C

TJ=25°C

-IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

500

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

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500

APM2607

Packaging Information

SOT-23-6

D

5

123

S1

D

46

e

E H

A2

A1 L2

A

L1

α

L

Dim

Min. Max. Min. Max.

A 1.00 1.45 0.0394 0.0571
A1 0.00 0.15 0.0000 0.0591
A2 0.70 1.25 0.0276 0.0492

b 0.35 0.55 0.0138 0.0217

D 2.70 3.10 0.1063 0.1220

E 1.40 1.80 0.50551 0.0709

e 1.90 BSC 0.07480 BSC

H 2.60 3.00 0.1024 0.1181

L 0.30 - 000118 -

L1 0.08 0.25 0.0031 0.0098
L2 0.60 REF 0.024 REF

α

0

°

S1 0.85 1.05 0.0335 0.0413

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

Millimeters Inches

10

°

0

°

10

°

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APM2607

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Pre-heat temperature

°

183 C

Classification Reflow Profiles

Peak temperature

Time

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak

temperature
Peak temperature range
Ramp-down rate

Time 25°C to peak temperature

120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds

220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bags

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2607

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOT-23-6

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

A B C J T1 T2 W P E

178±1 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2607

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT-23-6

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

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