Page 1
APM2509N
N-Channel Enhancement Mode MOSFET
Features
• 25V/60A , R
R
••
• Super High Dense Advanced Cell Design for
••
Extremely Low R
••
• Reliable and Rugged
••
••
• TO-252 Package
••
=8mΩ(typ.) @ VGS=10V
DS(ON)
=11mΩ(typ.) @ VGS=4.5V
DS(ON)
DS(ON)
Pin Description
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
12 3
DG
S
Top View of TO-252
D
G
S
N-Channel MOSFET
APM2509N
Handling Code
Temp. Range
Package Code
APM 2509N U :
APM2509N
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage 25
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 60
Maximum Drain Current – Pulsed 110
Parameter Rating Unit
Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -5 5 to 15 0 C
Handling Code
T U : Tu be
TR : Tape & Reel
XXXXX
°°°°
- Da te C od e
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
www.anpec.com.tw1
Page 2
APM2509N
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
50
20
Typ. Max.
P
D
TJ,T
STG
R
JA
θ
R
JC
θ
Electrical Characteristics (T
Maximum Power Dissipation
Maximum Operating and Storage Junction Temperature -55 to 150
Thermal Resistance – Junction to Ambient 50
Thermal Resistance – Junction to Case 2.5
= 25°C unless otherwise noted)
A
Symbol Parameter Test Condition
TA=25°C
=100°C
T
A
Min.
APM2509N
Static
BV
I
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
C
C
C
Drain-Source Breakdown
DSS
Zero Gate Voltage Drain
DSS
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=35A, VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=10V, IDS=35A
V
GS
V
DS
V
GS
Turn-on Delay Time
V
T
Turn-on Rise Time
r
Turn-off Delay Time
T
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
DD
V
GEN
V
GS
V
DS
Frequency =1.0MHz
=0V, IDS=250µA
25 V
=20V , VGS=0V 1 µA
, IDS=250µA
=±20V, VDS=0V
11.52
±100
89.5
=4.5V, IDS=20A
11 15
0.85 1.3
=15V, IDS=20A
=4.5V,
22 28
12.8
5
10 15
=15V, IDS=1A,
=10V, RG= 0.2Ω
713
35 50
10 20
=0V
=15V
2400
500
240
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
W
°C
°C/W
C/W
°
Unit
V
nA
mΩ
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
www.anpec.com.tw2
Page 3
APM2509N
Typical Characteristics
Output Characteristics
70
60
50
40
30
-Drain Current (A)
20
DS
I
10
0
01234567 8910
VGS=4,4.5,6,8,10V
VGS=3V
VGS=2.5V
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
1.0
Transfer Characteristics
50
VDS=10V
40
30
20
-Drain Current (A)
DS
I
10
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ=125°C
TJ=25°C
TJ=-55°C
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.015
0.012
VGS=4.5V
0.8
(Normalized)
0.6
VGS(th)-Threshold Voltage (V)
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
0.009
0.006
-On-Resistance (Ω)
DS(ON)
0.003
R
0.000
0 10203040 50 60708090100
VGS=10V
ID-Drain Current (A)
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Page 4
APM2509N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature
0.030
IDS=35A
0.025
0.020
0.015
-On-Resistance (Ω)
0.010
DS (ON)
R
0.005
0.000
345678910
Gate Voltage (V) Tj-Junction Temperature (°C)
On-Resistaence vs. Junction Temperature
10
9
VGS=10V
IDS=35A
1.6
1.4
1.2
1.0
(Normalized)
-On Resistance (Ω)
DS(ON)
0.8
R
0.6
-50 -25 0 25 50 75 100 125 150
Gate Charge
10
VDS=15V
IDS=20A
8
VGS=10V
I
=35A
DS
8
7
-On Resistance (Ω)
6
DS(ON)
R
5
4
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
6
4
-Gate-to-Source Voltage (V)
2
GS
V
0
0 1020304050
QG-Total-Gate Charge (nC)
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Page 5
APM2509N
Typical Characteristics (Cont.)
Capacitance Characteristics
3000
2000
1000
Ciss
Coss
500
C-Capacitance (pF)
Crss
Frequency=1MHz
100
0.1 1 10
VDS-Drain-to-Source Voltage (V)
Single Pulse Power
3000
Source-Drain Diode Forward Voltage
100
10
1
TJ=125°C
-Source Current (A)
SD
I
30
0.1
0.0 0.3 0.6 0.9 1. 2 1.5
TJ=25°C
VSD-Source to Drain Voltage (V)
TJ=-55°C
2500
2000
1500
Power (W)
1000
500
0
-5
10
-4
10
-3
10
10
Time (sec)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
-2
-1
10
0
10
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Page 6
APM2509N
Typical Characteristics (Cont.)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
0.01
10
-5
D=0.02
D=0.01
SINGLE PULSE
10
-4
Thermal Impedance
Normalized Effective Transient
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
3. TJM-TA=PDMZ
10
-3
10
-2
Square Wave Pulse Duration (sec)
thJA
10
thJA
-1
=50°C/W
10
0
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
www.anpec.com.tw6
Page 7
APM2509N
Package Informaion
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.18 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
Min. Max. Min. Max.
Millimeters Inches
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Page 8
APM2509N
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10°C /second max.
Preheat temperature 125± 25°C)
°
Temperature maintained above 183
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
C
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
°
220 +5/-0
°
C /second max. 10°C /second max.
6
6 minutes max.
C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
60 seconds
VPR
Package Reflow Conditions
pkg. thickness
and all bags
Convection220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
2.5mm
≥≥≥≥
°
C IR/Convection 235 +5/-0
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥
350 mm
pkg. thickness < 2.5mm and pkg.
volume <
°
Convection 235 +5/-0
VPR 235 +5/-0
°
C
C
°
C
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Page 9
APM2509N
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
www.anpec.com.tw9
Page 10
APM2509N
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
16 13.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.2 - Jun., 2003
www.anpec.com.tw10
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