Datasheet APM2506NUC-TUL, APM2506NUC-TU, APM2506NUC-TRL, APM2506NUC-TR Datasheet (ANPEC)

APM2506NU

y

g

A

Features

N-Channel Enhancement Mode MOSFET

Pin Description

z 25V/60A,

R

= 5mΩ (typ.) @ VGS= 10V

DS(ON)

= 7mΩ (typ.) @ VGS= 4.5V

R

DS(ON)

z Super High Dense Cell Design z Avalanche Rated z Reliable and Rugged

3

1

2

Applications

z Power Management in Desktop Computer or

DC/DC Converters

Ordering and Marking Information

Pin 3

D

Pin 1

G

S

Pin 2

PM2506N

APM2506N U:

APM2506N XXXXX

Lead Free Code Handing Code Temp. Range Package Code

Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device

Blank : Original Device

XXXXX – Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verif

1

before placin

orders.

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APM2506NU

Absolute Maximum Ratings

Symbol

Common Ratings (TA = 25°C)

V

DSS

V

GSS

TJ

T

STG

Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storag e Temperature Range -55 to 150

Mounted on Large Heat Sink

R

IDP

ID

PD

θJC

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Mounted on PCB of 1in2 pad

R

IDP

ID

PD

θJA

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Ambient 50 °C/W

area

Parameter Rating Unit

±25 ±20 150

TC=25°C 150 T

=100°C 80

C

TC=25°C 60*

=100°C 40

T

C

TC=25°C

=100°C

T

C

50 20

2.5

°C/W

TA=25°C 150

=100°C 80

T

A

TA=25°C 17

=100°C 10

T

A

TA=25°C

=100°C

T

A

2.5 1

V

°C °C

A

W

A

W

Mounted on PCB of Minimum Footprint

IDP

ID

PD

R

θJA

Notes：

* Current limited by bond wire

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Ambient 75 °C/W

2

TA=25°C 150

=100°C 80

T

A

TA=25°C 13 T

=100°C 7

A

TA=25°C

=100°C

T

A

1.5

0.5

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A

°C/W °C/W

APM2506NU

Electrical Characteristics (T

Symbol Parameter Test Condition

Drain-Source Avalanche Ratings

EAS Drain-Source Avalanche Energy ID=45A, VDD=15V 100 mJ

Static

BV

Drain-Source Breakdown Voltage

DSS

I

Zero Gate Voltage Drain Current VDS=20V, VGS=0V 1

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±20V, VDS=0V ±100 nA

GSS

a

R

Diode

Drain-Source On-state Resistance

DS(ON)

a

V

Diode Forward Voltage ISD=20A , VGS=0V 0.7 1.3 V

SD

IS Diode continuous forward current TA=25°C 40 A

=25°C)

A

APM2506NU

Unit

Min. Typ. Max.

V

=0V, IDS=250µA

GS

25 V

µA

V

DS=VGS

, IDS=250µA

1 1.5 2 V

VGS=10V, IDS=40A 5 6

mΩ

V

=4.5V, IDS=20A 7 10

GS

Dynamicb

C

Input Capacitance 3000 pF

iss

C

Output Capacitance 670 pF

oss

C

Reverse Transfer Capacitance

rss

t

Turn-on Delay Time 13 20 ns

d(ON)

Tr Turn-on Rise Time 9 15 ns

t

Turn-off Delay Time 43 66 ns

d(OFF)

Tf Turn-off Fall Time

V

=0V

GS

=15V

V

DS

Frequency=1.0MHz

V

=15V, R

DD

IDS=1A, V R

=6Ω

G

GEN

=15Ω

L

=10V,

360 pF

14 28 ns

Gate Chargeb

Qg Total Gate Charge 32 42 nC

=15V, VGS=4.5V,

V

Qgs Gate-Source Charge 6.6 nC Qgd Gate-Drain Charge

Notes：

a : Pulse test ; pulse width≤300 b : Guaranteed by design, not subject to production testing

µs, duty cycle≤2%

I

DS

=20A

12.4 nC

3

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APM2506NU

Typical Characteristics

Power Dissipation

60

70

Drain Current

50

40

30

- Power (W)

tot

20

P

10

0

0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C)

Safe Operation Area

300

100

60

50

40

30

20

- Drain Current (A)

D

I

10

0

0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C)

Thermal Transient Impedance

1

Duty = 0.5

100µs

10

1

- Drain Current (A)

D

I

300µs 1ms 10ms

DC

0.1

0.02

0.01

0.2

0.1

0.05

Single Pulse

Normalized Effective Transient

TC=25OC

0.1

0.1 1 10 70

V

- Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

DS

1E-3

1E-4 1E-3 0.01 0.1 1 10 100

4

Mounted on 1i n2 pad

:50oC/W

R

θJA

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APM2506NU

Typical Characteristics

100

Output Characteristics

Drain-Source On Resistance

12

VGS=3.5,4,5,6,7,8,9,10V

80

60

3V

40

- Drain Current (A)

D

I

20

0

0246810

V

- Drain-Source Voltage (V)

DS

2.5V

2V

10

8

6

4

- On Resistance (mΩ)

DS(ON)

2

R

0

0 20406080100

ID - Drain Current (A)

100

80

Transfer Characteristics

Gate Threshold Voltage

1.6

1.4

1.2

VGS=4.5V

VGS=10V

IDS =250µA

60

Tj=125oC

40

- Drain Current (A)

D

I

Tj=25oC

20

0

012345

V

- Gate-Source Voltage (V)

GS

Tj=-55oC

5

1.0

0.8

0.6

0.4

0.2

Normalized Threshold Voltage

0.0

-50 -25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

j

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APM2506NU

Typical Characteristics

Drain-Source On Resistance

2.00 VGS = 10V

= 40A

I

1.75

DS

Source-Drain Diode Forward

100

1.50

1.25

1.00

0.75

0.50

Normalized On Resistance

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

RON@Tj=25oC: 5mΩ

10

- Source Current (A)

1

S

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj=150oC

VSD - Source-Drain Voltage (V)

6000

5000

4000

3000

2000

C - Capacitance (nC)

1000

0

0 5 10 15 20 25

VDS - Drain-Source Voltage (V)

Capacitance

Frequency=1MHz

Ciss

Coss

Crss

Gate Charge

0

VDS=10 V

9

= 30 A

I

D

8 7 6 5 4 3

- Gate-Source Voltage (V) I

2

GS

V

1 0

0 10203040506070

QG - Gate Charge (nC)

Tj=25oC

6

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APM2506NU

Avalanche Test Circuit and Waveforms

VDS

L

DUT

IAS

RG

VDD

VDSX(SUS)

tp

VDS

tp

IL

0.01Ω

Switching Time Test Circuit and Waveforms

VDS

RD

DUT

VGS

RG

VDD

VDS

90%

VDD

EAS

tAV

tp

10%

VGS

td(on) tr

7

td(off) tf

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APM2506NU

Package information

E b2

L2

D

L1

A

C1

H

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080

Millimeters Inches

Min. Max. Min. Max.

8

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APM2506NU

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Classification Reflow Profiles

Average ramp-up rate (183°C to Peak) 3°C/ second max. 10°C /second max. Preheat temperature (125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature

Peak temperature range Ramp-down rate

Time 25°C to peak temperature

Convection or IR/

Convection

120 seconds max. 60~150 seconds 10~20 seconds 60 seconds

220 + 5/-0

°C /second max. 10°C /second max.

6 6 minutes max.

°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C

VPR

Time

9

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APM2506NU

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimension

t

D

D1

T2

T1

Bo

Ko

B

W

A

E

F

Po

J

P

P1

Ao

C

Application

TO-252

A B C J T1 T2 W P E

330±3 100±2 13±0.5 2±0.5

F D D1 Po P1 Ao Bo Ko t

7.5±0.1 1.5±0.1 1.5±0.25 4.0±0.1 2.0±0.1 6.8±0.1 10.4±0.1 2.5±0.1 0.3±0.05

16.4+0.3

-0.2

2.5±0.5

16+0.3

16-0.1

8±0.1 1.75±0.1

(mm)

10

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APM2506NU

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO-252 16 13.3 2500

Customer Service

Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

11

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