Page 1
APM2322AA
N-Channel Enhancement Mode MOSFET
Features
• 20V/1.7A ,
R
R
R
= 120mΩ(typ.) @ VGS=4.5V
DS(ON)
= 180mΩ(typ.) @ VGS=2.5V
DS(ON)
= 280mΩ(typ.) @ VGS=1.8V
DS(ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Pin Description
D
S
G
Top View of SOT-23
D
G
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
APM2322A
Assembly Material
Handling Code
Temperature Range
Package Code
APM2322A A :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
A22X
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
X - Date Code
www.anpec.com.tw1
Page 2
APM2322AA
mΩ
Absolute Maximum Ratings (T
Symbol
V
Drain-Source Voltage 20
DSS
V
Gate-Source Voltage ±12
GSS
Parameter Rating Unit
= 25°C unless otherwise noted)
A
ID* Continuous Drain Current 1.7
VGS=4.5V
IDM*
300µs Pulsed Drain Current
7
IS* Diode Continuous Forward Current 1 A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
TA=25°C 0.83
PD* Maximum Power Dissipation
TA=100°C 0.3
R
Note : *Surface Mounted on 1in
Electrical Characteristics (T
Thermal Resistance-Junction to Ambient 150 °C/W
*
θJA
2
pad area, t ≤ 10sec.
= 25°C unless otherwise noted)
A
V
A
°C
W
Symbol
Parameter Test Conditions
Min. Typ. Max.
STATIC CHARACTERISTICS
APM2322AA
BV
Drain-Source Breakdown Voltage
DSS
VGS=0V, IDS=250µA
20 - - V
VDS=16V, VGS=0V - - 1
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±10V, VDS=0V - - ±10
GSS
TJ=85°C
VDS=VGS, IDS=250µA
- - 30
0.5 0.7 1 V
VGS=4.5V, IDS=1.7A - 120 160
DS(ON)
a
Drain-Source On-State Resistance
VGS=2.5V, IDS=1.3A - 180 250
R
VGS=1.8V, IDS=0.5A - 280 450
DIODE CHARACTERISTICS
a
V
Diode Forward Voltage ISD=1A, VGS=0V - 0.8 1.3 V
SD
t
Reverse Recovery Time - 14 - ns
rr
Q
Reverse Recovery Charge
rr
ISD=1.7A, dlSD/dt=100A/µs
- 4 - nC
Unit
µA
µA
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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Page 3
APM2322AA
Electrical Characteristics (Cont.) (T
Symbol
Parameter Test Conditions
= 25°C unless otherwise noted)
A
APM2322AA
Min. Typ. Max.
DYNAMIC CHARACTERISTICS b
RG Gate resistance VGS=0V,VDS=0V,F=1MHz - 7 -
C
Input Capacitance - 115
iss
C
Output Capacitance - 35 -
oss
C
Reverse Transfer Capacitance
rss
t
Turn-on Delay Time - 2 5
d(ON)
Tr Turn-on Rise Time - 14 26
t
Turn-off Delay Time - 12 23
d(OFF)
Tf Turn-off Fall Time
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, R
IDS=1A, V
GEN
=10Ω,
L
=4.5V,
RG=6Ω
- 25 -
- 2 5
GATE CHARGE CHARACTERISTICS b
Qg Total Gate Charge - 1.8 2.5
Qgs Gate-Source Charge - 0.3 -
Qgd Gate-Drain Charge
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
VDS=10V, VGS=4.5V,
IDS=1.7A
- 0.7 -
Unit
Ω
pF
ns
nC
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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Page 4
APM2322AA
Typical Operating Characteristics
Power Dissipation
1.0
0.9
0.8
0.7
0.6
0.5
- Power (W)
0.4
tot
P
0.3
0.2
0.1
TA=25oC
0.0
0 20 40 60 80 100 120 140 160
Tj - Junc tion Temperature (°C)
Safe Operation Area
30
Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
- Drain Current (A)
D
I
0.6
0.4
0.2
TA=25oC,VG=4.5V
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
10
1
- Drain Current (A)
D
I
0.1
0.01
0.01 0.1 1 10 100
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
Rds(on) Limit
TA=25oC
VDS - Drain - Source Voltage (V)
300µs
1ms
10ms
100ms
DC
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
Normalized Transient Thermal Resistance
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Duty = 0.5
Mounted on 1in2 pad
R
: 150 oC/W
θJA
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Page 5
APM2322AA
Typical Operating Characteristics ( Cont.)
Output Characteristics
7
6
5
4
3
- Drain Current (A)
D
2
I
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS=4,5,6,7,8,9,10V
3V
2V
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
300
270
240
210
ID=1.7A
Drain-Source On Resistance
400
VGS=1.8V
350
300
250
200
- On - Resistance (mΩ)
150
DS(ON)
R
100
50
0 1 2 3 4 5 6 7
VGS=2.5V
VGS=4.5V
ID - Drain Current (A)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
180
150
- On Resistance (mΩ)
120
DS(ON)
R
90
60
1 2 3 4 5 6 7 8 9 10
V
- Gate-Source Voltage (V)
GS
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
1.0
0.8
Normalized Threshold Voltage
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
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Page 6
APM2322AA
Typical Operating Characteristics ( Cont.)
Drain-Source On Resistance
1.8
VGS = 4.5V
IDS = 1.7A
1.6
1.4
1.2
1.0
0.8
Normalized On Resistance
0.6
0.4
-50 -25 0 25 50 75 100 125 150
RON@Tj=25oC: 120mΩ
Tj - Junction Temperature (°C)
Capacitance
200
180
160
Frequency=1MHz
Source-Drain Diode Forward
7
1
Tj=150oC
- Source Current (A)
S
I
0.1
0.0 0.3 0.6 0.9 1.2 1.5 1.8
Tj=25oC
VSD - Source - Drain Voltage (V)
Gate Charge
10
VDS= 10V
9
IDS = 1.7A
8
140
120
100
80
C - Capacitance (pF)
60
Crss
40
20
0 4 8 12 16 20
VDS - Drain - Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
Coss
Ciss
7
6
5
4
3
- Gate - source Voltage (V)
GS
2
V
1
0
0 1 2 3 4
QG - Gate Charge (nC)
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Page 7
APM2322AA
Package Information
SOT-23
D
e
SEE
VIEW A
E
E1
MIN.
0.000
0.035
0.003
0.106
0.055
0.012
0
c
L
INCHES
0.037 BSC
0.075 BSC
0
MAX.
0.057
0.006
0.051
0.0200.012
0.009
0.122
0.1180.102
0.071
0.024
b
e1
A2A1
A
VIEW A
S
Y
M
B
O
L
A
A1
A2
b
c
D
E
E1
e
e1
L 0.30
0
Note : Dimension D and E1 do not include mold flash, protrusions or gate
burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil
per side.
MILLIMETERS
MIN.
0.00
0.90
0.30
0.08
2.70
2.60
1.40
0.95 BSC
1.90 BSC
0
MAX.
1.45
0.15
1.30
0.50
0.22
3.10
3.00
1.80
0.60
SOT-23
8
0.25
GAUGE PLANE
SEATING PLANE
8
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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Page 8
APM2322AA
Carrier Tape & Reel Dimensions
P0
OD0
B0
P2
P1
A
E1
F
W
Application
SOT-23
K0
SECTION A-A
T1
B
A
H
A0
SECTION B-B
OD1
B
T
A
d
A H T1 C d D W E1 F
178.0±2.00 50 MIN.
8.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 4.0±0.10 2.0±0.05
1.5+0.10
-0.00
1.0 MIN.
0.6+0.00
-0.40
3.20±0.20 3.10±0.20 1.50±0.20
(mm)
Devices Per Unit
Package Type Unit Quantity
SOT-23
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
Tape & Reel 3000
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Page 9
APM2322AA
Taping Direction Information
SOT-23
USER DIRECTION OF FEED
Reflow Condition (IR/Convection or VPR Reflow)
T
P
Ramp-up
T
L
Tsmax
Tsmin
Temperature
ts
Preheat
25
°
t 25 C to Peak
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003
HOLT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9
tp
Ramp-down
Time
t
L
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Critical Zone
TL to T
P
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
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Page 10
APM2322AA
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness Volume mm
<2.5 mm
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness Volume mm3
<350
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
260 +0°C* 260 +0°C* 260 +0°C*
260 +0°C* 250 +0°C* 245 +0°C*
3°C/second max. 3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
See table 1 See table 2
10-30 seconds 20-40 seconds
6°C/second max. 6°C/second max.
6 minutes max. 8 minutes max.
3
<350
240 +0/-5°C 225 +0/-5°C
Volume mm3
350-2000
150°C
200°C
60-180 seconds
217°C
60-150 seconds
Volume mm
≥350
Volume mm3
3
>2000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
www.anpec.com.tw10
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