Datasheet APM2313AC-TR Datasheet (ANPEC)

APM2313

P-Channel Enhancement Mode MOSFET

Features

• -20V/-1.8A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=108mΩ(typ.) @ VGS=-4.5V

DS(ON)

=135mΩ(typ.) @ VGS=-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

S

G

D

P-Channel MOSFET

APM 2313

Handling Code
Temp. Range
Package Code

APM 2313 A : M13X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous -1.8
Maximum Drain Current – Pulsed -7

Parameter Rating Unit

Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

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APM2313

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-0.5A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-16V , VGS=0V -1

DS

V
V

, IDS=-250µA

DS=VGS

=±10V , VDS=0V

GS

VGS=-4.5V , IDS=-1.8A

=-2.5V , IDS=-0.8A

V

GS

V

=-10V , IDS= -1.8A ,

DS

V

=-4.5V

GS

=-10V , IDS=-1A ,

V

DD

V

=-4.5V , RG=6

GEN

V

=0V

GS

V

=-15V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2313

Min. Typ. Max.

-20 V

-0.5 -0.7 -1
100

±

108 140
135 175

-0.8 -1.3

5.3 7

1.04

0.62
816
715

18 35

815

435
120

65

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw2

APM2313

Typical Characteristics

Output Characteristics

7

6

5

4

3

2

-VGS=3,4,5,6,7,8,9,10V

-VGS=2V

-ID-Drain Current (A)

1

-VGS=1V

0

012345

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

-IDS=250µA

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Transfer Characteristics

7

6

5

4

3

2

-ID-Drain Current (A)

1

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=125°C

TJ=25°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.18

0.17

0.16

0.15

0.14

0.13

0.12

0.11

0.10

RDS(ON)-On-Resistance (Ω)

0.09

0.08
01234567

-VGS=2.5V

-VGS=4.5V

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

-ID - Drain Current (A)

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APM2313

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.16

0.15

0.14

0.13

0.12

0.11

0.10

0.09

0.08

RDS(ON)-On-Resistance (Ω)

0.07

0.06
12345678910

-VGS - Gate-to-Source Voltage (V)

-ID=1.8A

Gate Charge

5

-VDS=10V

-ID=1.8A

4

On-Resistance vs. Junction T emperature

2.5

-VGS=4.5V

-ID=1.8A

2.0

1.5

1.0

(Normalized)

0.5

RDS(ON)-On-Resistance (Ω)

0.0

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

600

500

Capacitance

Frequency=1MHz

Ciss

3

2

1

-VGS-Gate-Source Voltage (V)

0

0123456

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

400

300

200

Capacitance (pF)

100

0

0 5 10 15 20

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM2313

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

10

1

TJ=150°C

TJ=25°C

-IS-Source Current (A)

0.1

0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

10

8

6

4

Power (W)

2

0

0.01 0.1 1 10 100

500

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

D=0.01

0.01
1E-4 1E-3 0.01 0.1 1 10 100

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

500

Square Wave Pulse Duration (sec)

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APM2313

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0. 000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC

H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

www.anpec.com.tw6

APM2313

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a teg ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2313

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Application

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

SOT-23

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

T1

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2313

Cover Tape Dimensions

Application Carrier Width Co ver Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003

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