Datasheet APM2312AC-TR Datasheet (ANPEC)

APM2312

N-Channel Enhancement Mode MOSFET

Features

• 16V/5A , R

R



 R



••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

• SOT-23 Package

••

=35mΩ(typ.) @ VGS=4.5V

DS(ON)

=45mΩ(typ.) @ VGS=2.5V

DS(ON)

=60mΩ(typ.) @ VGS=1.8V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

D

3

12

G

S

Top View of SOT-23

D

G

S

N-Channel MOSFET

APM2312

Handling Code
Temp. Range
Package Code

APM2312 A :

M12X

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 16
Gate-Source Voltage ±8
Maximum Drain Current – Continuous 5
Maximum Drain Current – Pulsed 15

Parameter Rating Unit

Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

X - Date Code

= 25°C unless otherwise noted)

A

°

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

www.anpec.com.tw1

APM2312

y

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Notes

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=1.7 A , VGS=0V

SD

b

Total Ga te Charge

g

Gate-Source Charge

gs

Gate-Dra in C harge

gd

Turn - on Delay Time
Turn - on R ise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Parameter Rating Unit

TA=25°C

=100°C

T

A

= 25°C unless otherwise noted)

A

=0V , IDS=250µA

V

GS

V

=16V , VGS=0V 1

DS

V
V

, IDS=250µA

DS=VGS

=±8V , VDS=0V

GS

VGS=4.5V , IDS=5A
VGS=2.5V , IDS=4.5A
V

=1.8V , IDS=4A

GS

=10V , IDS= 1A

V

DS

=4.5V ,

V

GS

=10 V , IDS=1A ,

V

DD

V

=4.5V , RG=0.2

GEN

=0V

V

GS

V

=15V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2312

Min. T

p. Max.

16 V

0.5 0.7 1
100

±

35 45
45 55
60 70

0.7 1.3

10 12

1.9

1.8
17 33
40 70
45 80
25 45

580
170
100

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

www.anpec.com.tw2

APM2312

Typical Characteristics

12

10

Output Characteristics

VGS=2,3,4,5,6,7,8,9,10V

8

6

4

VGS=1.5V

ID-Drain Current (A)

2

VGS=1V

0

012345

VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

IDS=250uA

1.50

Transfer Characteristics

12

10

8

6

4

TJ=125°C

ID-Drain Current (A)

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.08

0.07

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
036912

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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APM2312

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

RDS(ON)-On-Resistance (Ω)

0.02

0.01
012345678

VGS - Gate-to-Source V oltage (V)

Gate Charge

5

VDS=10V
ID=1A

4

ID=5A

On-Resistance vs. Junction T emperature

2.25

VGS=4.5V
I

D=5A

2.00

1.75

1.50

1.25

1.00

(Normalized)

0.75

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

1000

800

Frequency=1MHz

3

2

1

VGS-Gate-Source Voltage (V)

0

024681012

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

600

400

Capacitance (pF)

200

0

0 4 8 12 16 20

Ciss

Coss
Crss

VDS - Drain-to-Source V oltage (V)

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APM2312

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

20

10

TJ=150°C

TJ=25°C

IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

600

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

600

Square Wave Pulse Duration (sec)

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APM2312

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0.000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

www.anpec.com.tw6

APM2312

Physical Specifications

Term in al Ma te rial Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2312

F

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application

SOT-23

(mm)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

A B C J T1 T2 W P E

178±1 60 ± 1.0 12.0 2.5 ± 0.15 9.0 ± 0.5 1.4

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1

0.1MIN 4.0 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03

8.0+ 0.3

- 0.3

4.0 1.75

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APM2312

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.2 - July., 2003

www.anpec.com.tw9