Datasheet APM2306AC-TR Datasheet (ANPEC)

APM2306

N-Channel Enhancement Mode MOSFET

Features

• 30V/3.5A, R

R

••

•

Super High Dense Cell Design

••

••

•

High Power and Current Handling Capability

••

••

•

SOT-23 Package

••

=70mΩ(typ.) @ VGS=5V

DS(ON)

=42mΩ(typ.) @ VGS=10V

DS(ON)

Pin Description

Applications

• Switching Regulators

• Switching Converters

Ordering and Marking Information

APM 2306

Handling Code
Temp. Range
Package Code

Package Code
A : SO T -2 3
Operating Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

D

3

12

G

S

Top View of SOT-23

°

APM 2306 A : M06X

Absolute Maximum Ratings (T

X - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID

IDM

PD

TJ

T

STG

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise



customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.

Rev. A.2 - Aug., 2002

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Pulsed Drain Current ( pulse width ≤ 300µs)
Maximum Drain Current – Pulsed 16

TA=25°C

Maximum Power Dissipation

T

=100°C

A

Maximum Junction Temperature
Storage Temperature Range -55 to 150

V

3.5
A

1.25 W

0.5 W

150

°C
°C

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APM2306

Electrical Characteristics

(TA= 25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

V

I

R

DS(ON)

V

DSS

GS(th)

GSS

Drain-Sour ce Br eak do wn

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Sour c e O n- state

Resistance
Diode Forward Volta ge ISD=1.25A, VGS=0V 1.1 1.5 V

SD

V

=0V, IDS=250µA

GS

=24V, VGS=0V 1

V

DS

V

DS=VGS

V

GS

, IDS=250µA

=±20V, VDS=0V

VGS=5V, IDS=2.8A 70 90

=10V, IDS=3.5A 42 65

V

GS

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C
C

C

Total Gate Charge 12.5 nC

g

Gate-Source Charge 3.7 nC

gs

Gate-Drain Charge

gd

V

=15V, VGS=5V,

DS

I

=3.5A

D

Turn-on Delay Time 10 ns

t

Turn-on Rise Time 8 ns

r

Turn-off Delay Time 19 ns

t

Turn-off Fall Time

f

iss

Input Capacitance 410 pF
Output Capacitance 80 pF

oss

rss

Reverse Transfer Capacitance

=15V,ID=1A,

V

DD

V

=10V, RG=6

GS

V

=0V

GS

=15V

V

DS

Ω

Frequency=1.0MHz

APM2306

Min. Typ. Max.

Unit

30 V

A

µ

11.5 V

±

100

nA

m

Ω

2.4 nC

6.2 ns

45 pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

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APM2306

Typical Characteristics

Output Characteristics

12

10

8

6

4

VGS=5,6,7,8,9,10V

VGS=4V

ID-Drain Current (A)

2

0

012345

VGS=3V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Temperature

2.25

µΑ

IDS=250

Transfer Characteristics

16

12

8

ID-Drain Current (A)

4

0

0123456

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

120

2.00

1.75

1.50

1.25

VGS(th)-Threshold Voltage (V)

1.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

100

80

60

40

20

VGS=5V

VGS=10V

RDS(on)-On-Resistance (mΩ)

0

0246810

ID - Drain Current (A)

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APM2306

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

120

100

80

60

40

20

RDS(on)-On-Resistance (mΩ)

0

246810

ID=3.5A

VGS - Gate-to-Source V oltage (V)

Gate Charge

10

VD=15V
ID=3.5A

8

On-Resistance vs. Junction T emperature

70

VGS=10V

D=3.5A

I

60

50

40

30

20

RDS(on)-On Resistance (mΩ)

10

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

750

625

Capacitance

6

4

2

VGS-Gate-Source Voltage (V)

0

02468101214

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

500

Ciss

375

250

Capacitance (pF)

125

0

0 5 10 15 20 25 30

Coss
Crss

VDS - Drain-to-Source Voltage (V)

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APM2306

Typical Characteristics

Source-Drain Diode Forward Voltage

30

10

IS-Source Current (A)

TJ=150°C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

TJ=25°C

VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

14

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

D=0.01

0.01

SINGLE PULSE

1E-4 1E-3 0.01 0.1 1 10 100

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

Square Wave Pulse Duration (sec)

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APM2306

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0.000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122

E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

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APM2306

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a tegory 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 sec onds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2306

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Application

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

SOT-23

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

T1

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2306

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

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