Datasheet APM2305AC-TR Datasheet (ANPEC)

APM2305

• -16V/-3.5A , R

R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

Applications

=60mΩ(typ.) @ VGS=-4.5V

DS(ON)

=70mΩ(typ.) @ VGS=-2.5V

DS(ON)

=83mΩ(typ.) @ VGS=-1.8V

DS(ON)

P-Channel Enhancement Mode MOSFET

Pin DescriptionFeatures

D

3

12

G

Top View of SOT-23

S

S

• Power Management in Notebook Computer ,

G

Portable Equipment and Battery Powered
Systems.

D

Ordering and Marking Information

APM2305

Handling Code
Temp. Range
Package Code

APM2305 A :

M05X X - Date Code

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -16
Gate-Source Voltage ±8
Maximum Drain Current – Continuous -3.5
Maximum Drain Current – Pulsed -12

Parameter Rating Unit

Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

(TA = 25°C unless otherwise noted)

P-Channel MOSFET

°

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

www.anpec.com.tw1

APM2305

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakdow n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Ga te Charge

g

Gate-Source Char ge

gs

Gate-Drain Ch arge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

=-6.5V , VGS=0V -1

V

DS

V
V

, IDS=-250µA

DS=VGS

=±8V , VDS=0V

GS

VGS=-4.5V , IDS=-3.5A
VGS=-2.5V , IDS=-3A
V

=-1.8V , IDS=-2A

GS

V

=-5V , IDS=-1A

DS

V

=-4.5V

GS

=-10V , IDS=-1A ,

V

DD

V

=-4.5V , RG=6

GEN

V

=0V

GS

=-15V

V

DS

Ω

Frequency=1.0MH z

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2305

Min. Typ. Max.

-16 V

-0.5 -0.7 -1
100

±

60 70
70 85
83 105

-0.7 -1.3

12.7 15

1.75

2.8
12 21
25 42
52 85
18 32

1290

300
210

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

www.anpec.com.tw2

APM2305

Typical Characteristics

Output Characteristics

12

10

8

6

4

-VGS=2,3,4,5,6,7,8,9,10V

-VGS=1.5V

-ID-Drain Current (A)

2

-VGS=1V

0

012345

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

-IDS=250uA

Transfer Characteristics

12

10

8

6

4

TJ=125°C

-ID-Drain Current (A)

2

0

TJ=25°C

0.0 0.5 1.0 1.5 2.0 2.5

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.10

0.09

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

0.08

0.07

0.06

0.05

RDS(ON)-On-Resistance (Ω)

0.04
024681012

-VGS=2.5V

-VGS=4.5V

-ID - Drain Current (A)

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APM2305

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.22

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

RDS(ON)-On-Resistance (Ω)

0.02

0.00
012345678

-VGS - Gate-to-Source Voltage (V)

Gate Charge

5

-VDS=5V

-ID=1A

4

-ID=3.5A

On-Resistance vs. Junction T emperature

2.00

-VGS=4.5V

-I

D=3.5A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

2500

2000

Frequency=1MHz

3

2

1

-VGS-Gate-Source Voltage (V)

0

03691215

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

1500

1000

Ciss

Capacitance (pF)

500

0

0 5 10 15 20

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM2305

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

10

1

TJ=150°C

-IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSD -Source-to-Drain Voltage (V)

TJ=25°C

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

500

Time (sec)

1

Duty Cycle=0.

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

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500

APM2305

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0.000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

www.anpec.com.tw6

APM2305

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow C ond itio n

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Pre-heat temperature

°

183 C

Classificatio n R e flow Profiles

Peak temperature

Time

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak

temperature
Peak temperature range
Ramp-down rate

Time 25°C to peak temperature

120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds

220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bags

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and p kg .
volume < 350mm³

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APM2305

F

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOT-23

(mm)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

A B C J T1 T2 W P E

178±1 60 ± 1.0 12.0 2.5 ± 0.15 9.0 ± 0.5 1.4

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1

0.1MIN 4.0 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03

8.0+ 0.3

- 0.3

4.0 1.75

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APM2305

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003

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