Datasheet APM2301AC-TR Datasheet (ANPEC)

APM2301

P-Channel Enhancement Mode MOSFET

Features

• -20V/-2.8A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOT-23 Package

••

=72mΩ(typ.) @ VGS=-10V

DS(ON)

=100mΩ(typ.) @ VGS=-4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

APM 2301

Handling Code
Temp. Range
Package Code

APM 2301 A : M01X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous -2.8
Maximum Drain Current – Pulsed -10

Parameter Rating Unit

Package Code
A : SO T -2 3
Operation Junction Temp. Range
C : -5 5 to 1 5 0 C
Handling Code
TR : Tape & R eel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

www.anpec.com.tw1

APM2301

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

θjA

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-16V , VGS=0V 1

DS

V
V

, IDS=-250µA

DS=VGS

=±16V , VDS=0V

GS

VGS=-10V , IDS=-2.8A

=-4.5V , IDS=-2.5A

V

GS

=-10V , IDS=-3A

V

DS

=-4.5V

V

GS

=-10V , IDS=-1A ,

V

DD

=-4.5V , RG=6

V

GEN

R

=6

Ω

L

Ω

VGS=0V

=-15V

V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2301

Min. Typ. Max.

20 V

0.6 1.5
100

±

72 85
98 110

0.6 1.3

7.6 10

3.2
2

11 22
32 55
38 68
32 55

430
235

95

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

www.anpec.com.tw2

APM2301

Typical Characteristics

Output Characteristics

10

8

6

4

-ID-Drain Current (A)

2

0

012345

-VGS=3.5,4,4.5,5V

-VGS=3V

-VGS=2.5V

-VGS=2V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

-IDS=250uA

1.25

1.00

Transfer Characteristics

10

8

6

4

-ID-Drain Current (A)

2

0

0.0 0.5 1.0 1.5 2.0 2.5

0.150

0.135

0.120

0.105

TJ=25°C

TJ=125°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

-VGS=4.5V

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

0.090

0.075

0.060

RDS(ON)-On-Resistance (Ω)

0.045

0.030
0246810

-VGS=10V

-ID - Drain Current (A)

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APM2301

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.30

0.25

0.20

0.15

0.10

0.05

RDS(ON)-On-Resistance (Ω)

0.00
12345678910

-VGS - Gate-to-Source Voltage (V)

-ID=2.8A

Gate Charge

10

-VDS=10V

-ID=3A

8

On-Resistance vs. Junction T emperature

2.0

-VGS=10V

-I

D=2.8A

1.8

1.6

1.4

1.2

1.0

(Normalized)

0.8

0.6

RDS(ON)-On-Resistance (Ω)

0.4

0.2

-50-250 255075100125150

TJ - Junction Temperature (°C)

750

625

Capacitance

6

4

2

-VGS-Gate-Source Voltage (V)

0

03691215

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

500

375

250

Ciss

Capacitance (pF)

125

0

0 5 10 15 20

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM2301

Typical Characteristics

Source-Drain Diode Forward Voltage

10

TJ=150°C

TJ=25°C

-IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

14

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

D=0.01

0.01
1E-4 1E-3 0.01 0.1 1 10 100

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

Square Wave Pulse Duration (sec)

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APM2301

Packaging Information

SOT-23

D
B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0. 000 0.004

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071

e 1.90 BSC 0.075 BSC

H 2.40 3.00 0.094 0.118

L 0.37 0.0015

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

www.anpec.com.tw6

APM2301

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD- 0 02 Categor y 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Pre-heat temperature

°

183 C

Classification Reflow Profiles

Peak temperature

Time

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak

temperature
Peak temperature range
Ramp- down ra t e

Time 2 5°C to peak temperature

120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds

220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bags

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2301

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOT-23

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2301

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

8 5.3 3000

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002

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