Datasheet APM2301AAC-TR Datasheet (ANPEC)

APM2301A

P-Channel Enhancement Mode MOSFET

Features

• -20V/-3A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

• SOT-23 Package

••

=72mΩ(typ.) @ VGS=-4.5V

DS(ON)

=98mΩ(typ.) @ VGS=-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered Systems.

Ordering and Marking Information

D

G

S

Top View of SOT-23

APM 2301A

Handling Code Temp. Range Package Code

APM 2301A A : A01X

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -20 Gate-Source V o ltage ±8 Maximum Drain Current – Continuous -3 Maximum Drain Current – Pulsed -10

Parameter Rating Unit

Package Code A : SO T -2 3 Operation Junction Temp. Range C : -5 5 to 1 5 0 C Handling Code TR : Tape & R eel

X - Date Code

°

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

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APM2301A

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150 Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 100

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q Q Q

t

d(ON)

T

t

d(OFF)

T

C

Drain-Source Breakd o w n

DSS

Voltage Zero Gate Voltage Drain

Current Gate Threshold Voltage

Gate Leakage Current Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-1.25A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time Turn-on Rise Time

r

Turn-off Delay Time Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=-250µA

GS

V

=-16V , VGS=0V 1

DS

V V

, IDS=-250µA

DS=VGS

=±8V , VDS=0V

GS

VGS=-4.5V , IDS=-3A

=-2.5V , IDS=-2A

V

GS

=-10V , IDS=-3A

V

DS

=-4.5V

V

GS

=-10V , IDS=-1A ,

V

DD

=-4.5V , RG=6

V

GEN

R

=6

Ω

L

Ω

VGS=0V

=-12V

V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

1.25

0.5

°

APM2301A

Min. Typ. Max.

20 V

0.45 1.2 100

±

72 90 98 115

0.6 1.3

912 4

2.6 13 21.5 36 56 45 69.5 37 57.5

510 270 120

W

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

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APM2301A

Typical Characteristics

Output Characteristics

10

-VGS=3,4.5,6,7,8V

8

6

4

-ID-Drain Current (A)

2

0

012345678910

-VGS=2V

-VGS=1.5V

-VGS=1V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

-IDS=250uA

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

Transfer Characteristics

10

8

6

4

-ID-Drain Current (A)

2

0

0.0 0.5 1.0 1.5 2.0 2.5

0.12

0.11

0.10

0.09

0.08

0.07

0.06

0.05

RDS(ON)-On-Resistance (Ω)

0.04

TJ=25°C

TJ=125°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

-VGS=2.5V

-VGS=4.5V

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

0.03 0246810

-ID - Drain Current (A)

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APM2301A

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.20

0.18

0.16

0.14

-ID=3A

0.12

0.10

RDS(ON)-On-Resistance (Ω)

0.08

0.06 12345678

-VGS - Gate-to-Source Voltage (V)

Gate Charge

5

-VDS=10V

-ID=3A

4

3

On-Resistance vs. Junction T emperature

2.0

-VGS=4.5V

-I

D=3A

1.8

1.6

1.4

1.2

1.0

(Normalized)

0.8

0.6

RDS(ON)-On-Resistance (Ω)

0.4

0.2

-50-250 255075100125150

TJ - Junction Temperature (°C)

800

700

600

500

Capacitance

Ciss

2

1

-VGS-Gate-Source Voltage (V)

0

0246810

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

400

300

Capacitance (pF)

200

100

0 5 10 15 20

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

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APM2301A

Typical Characteristics

Source-Drain Diode Forward Voltage

10

TJ=150°C

TJ=25°C

-IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

14

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

D=0.01

0.01 1E-4 1E-3 0.01 0.1 1 10 100

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

Square Wave Pulse Duration (sec)

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APM2301A

Packaging Information

SOT-23

D B

3

1

S

e

E H

2

A

Dim

A1

L

Millimeters Inches

Min. Max. Min. Max.

C

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0. 000 0.004

B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e 1.90 BSC 0.075 BSC H 2.40 3.00 0.094 0.118 L 0.37 0.0015

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

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APM2301A

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD- 0 02 Categor y 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Pre-heat temperature

°

183 C

Classification Reflow Profiles

Peak temperature

Time

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak

temperature Peak temperature range Ramp- down ra t e

Time 2 5°C to peak temperature

120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 60 seconds

220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C 6 °C /second max. 10 °C /second max. 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm and all bags

Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg. volume < 350mm³

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APM2301A

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOT-23

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

F D D1 Po P1 Ao Bo Ko t

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

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APM2301A

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 23

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, T aiwan, R.O.C. T el : 886-3-5642000 Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. T el : 886-2-89191368 Fax : 886-2-89191369

8 5.3 3000

Copyright  ANPEC Electronics Corp. Rev. A.3 - Jun., 2003

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