Page 1
APM2300A
N-Channel Enhancement Mode MOSFET
Features
• 20V/6A , R
R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• SOT-23 Package
••
=25mΩ(typ.) @ VGS=10V
DS(ON)
=32mΩ(typ.) @ VGS=4.5V
DS(ON)
=40mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
D
G
S
Top View of SOT-23
D
G
S
N-Channel MOSFET
APM2300A
Handling Code
Temp. Range
Package Code
APM 2300A A : A00X
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage 20
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Parameter Rating Unit
Package Code
A : SO T-23
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
X - Date Code
°
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
www.anpec.com.tw1
Page 2
APM2300A
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 100
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Volta ge
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.25A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
V
=16V , VGS=0V 1
DS
V
V
VGS=10V , IDS=6A
VGS=4.5V , IDS=3A
V
V
V
V
V
V
V
Frequency=1.0MHz
, IDS=250µA
DS=VGS
=±12V , VDS=0V
GS
=2.5V , IDS=2A
GS
=10V , IDS= 6A
DS
=4.5V
GS
=10V , IDS=1A ,
DD
=4.5V , RG=0.2
GEN
=0V
GS
=15V
DS
Ω
= 25°C unless otherwise noted)
A
1.25
0.5
°
APM2300A
Min. Typ. Max.
20 V
0.5 0.7 1.0
100
±
25 30
32 40
40 55
0.7 1.3
10 12
3.6
2
814
612
19 45
723
550
120
80
W
C
°
C
°
C/W
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
www.anpec.com.tw2
Page 3
APM2300A
Typical Characteristics
Output Characteristics
20
15
10
5
ID-Drain Current (A)
0
012345678910
VGS=3,4.5,6,7,8V
VGS=2V
VGS=1.5V
VGS=1V
VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
IDS=250uA
Transfer Characteristics
20
15
10
ID-Drain Current (A)
5
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=125°C
TJ=-55°C
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.7
0.6
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
0.5
0.4
0.3
0.2
RDS(ON)-On-Resistance (Ω)
0.1
0.0
0246810
VGS=2.5V
VGS=4.5V
ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM2300A
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.09
0.08
0.07
0.06
ID=6A
0.05
0.04
RDS(ON)-On-Resistance (Ω)
0.03
0.02
012345678
VGS - Gate-to-Source Voltage (V)
Gate Charge
10
VDS=10V
ID=6A
8
On-Resistance vs. Junction Temperature
2.00
VGS=10V
ID=6A
1.75
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
750
625
Capacitance
Frequency=1MHz
Ciss
6
4
2
VGS-Gate-Source Voltage (V)
0
0 2 4 6 8 10 12 14 16 18
Q
G - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
500
375
250
Capacitance (pF)
125
0
0 5 10 15 20
Coss
Crss
VDS - Drain-to-Source Voltage (V)
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Page 5
APM2300A
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
IS-Source Current (A)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
14
12
10
8
6
Power (W)
4
2
0
0.01 0.1 1 10 100
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
D=0.01
0.01
1E-4 1E-3 0.01 0.1 1 10 100
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
Square Wave Pulse Duration (sec)
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Page 6
APM2300A
Packaging Information
SOT-23
D
B
3
1
S
e
E H
2
A
Dim
A1
L
Millimeters Inches
Min. Max. Min. Max.
C
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0.000 0.004
B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071
e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118
L 0.37 0.0015
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
www.anpec.com.tw6
Page 7
APM2300A
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
2.5mm
≥≥≥≥
pkg. thickness < 2.5mm and
pkg. volume
350 mm³
≥≥≥≥
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 8
APM2300A
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape
W
t
E
F
A
Po
J
P
P1
Ao
C
D
Bo
Ko
D1
T2
B
Application
A B C J T1 T2 W P E
178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3
SOT-23
F D D1 Po P1 Ao Bo Ko t
3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
T1
8.0+ 0.3
- 0.3
4 ± 0.1 1.75± 0.1
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Page 9
APM2300A
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 23
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
8 5.3 3000
Copyright ANPEC Electronics Corp.
Rev. A.4 - May., 2003
www.anpec.com.tw9
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