Page 1
APM2095P
P-Channel Enhancement Mode MOSFET
Features
• -20V/-3.6A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• TO-252 Package
••
=70mΩ(typ.) @ VGS=-4.5V
DS(ON)
=100mΩ(typ.) @ VGS=-2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
G DS
Top View of TO-252
APM 2095P
Handling Code
Temp. Range
Package C ode
APM 2095P U :
APM 2095P
XXXXX
Absolute Maximum Ratings
Package Code
U : T O-25 2
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Ree l
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V
Drain-Source Voltage -20
DSS
V
Gate-Source Voltage ±10
GSS
V
ID Maximum Drain Current – Continuous -3.6
IDM
Maximum Pulsed Drain Current (pulse width ≤ 300µs)
-20
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw1
Page 2
APM2095P
q
Absolute Maximum Ratings Cont. (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
TC=25°C
50
W
T
=100°C
C
20
TJ Maximum J unc tion Temperature 150
°
°
C/W
C
Unit
T
Storage Temperature Range -55 to 150
STG
*
R
θ
JA
R
θ
JC
*
Mounted on 1in
Electrical Characteristics (T
Thermal Resistance – Junction to Ambient 50
Thermal Resistance – Junction to Case 2.5
2
pad area of PCB.
= 25°C unless otherwise noted)
A
Symbol Parameter Test Condition
APM2095P
Min.
Typ. Max.
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage I
SD
=0V , IDS=-250µA
V
GS
VDS=-16V , VGS=0V -1
V
DS=VGS
V
GS
, IDS=-250µA
=±10V , VDS=0V
VGS=-4.5V , IDS=-3.6A 70 95
V
=-2.5V , IDS=-2A 100 125
GS
=-1A , VGS=0V -0.7 -1.3 V
SD
-20 V
µA
-0.5 -0.7 -1 V
±100
nA
mΩ
Dynamicb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=-10V , IDS=-3.6A
V
DS
=-4.5V
V
GS
V
=-10V , IDS=-3.6A ,
DD
V
=-4.5V , RG=6Ω
GEN
=0V
V
GS
=-15V
V
DS
Fre
uency=1.0MHz
11 15
2
1.5
13 22
36 56
45 70
37 58
550
170
120
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw2
Page 3
APM2095P
Typical Characteristics
Output Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
0246810
-VGS=3,4,5,6,7 ,8V
-2V
-1.5V
-VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
(Normalized)
0.6
0.4
-VGS(th)-Threshold Voltage
0.2
0.0
-50 -25 0 25 50 75 100 125 150
IDS =250µA
Tj - Junction T emperature (°C)
Transfer Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=125oC
Tj=25oC
Tj=-55oC
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.16
0.14
0.12
0.10
0.08
0.06
DS(ON)-On-Resistance (Ω)
R
0.04
0.02
0246810
-VGS=2.5V
-VGS=4.5V
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw3
Page 4
APM2095P
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.10
0.09
0.08
0.07
0.06
RDS(ON)-On-Resistance (Ω)
0.05
0.04
12345678910
-VGS - Gate-to-Source Voltage (V)
-ID= 3.6A
Gate Charge
5
-VDS= 10 V
-I
= 3.5 A
D
4
RDS(ON)-On-Resistance
On-Resistance vs. Junction T emperature
1.5
-VGS = 4.5V
1.4
-I
= 3.6A
DS
1.3
1.2
1.1
1.0
(Normalized)
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
1000
800
RON@Tj=25OC:70 m
Capacitance
Frequency=1MHz
Ω
3
2
1
-VGS-Gate-Source Voltage (V)
0
02468101214
Q
G - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
600
400
Ciss
Capacitance (pF)
200
0 4 8 121620
Crss
Coss
-VDS - Drain-to-Source Voltage (V)
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Page 5
APM2095P
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
Tj=150oC
1
Tj=25oC
-IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
SINGLE PULSE
Thermal Impedance
Normalized Effective Transient
1E-3
1E-4 1E-3 0.01 0.1 1 10 100 300
Single Pulse Power
300
250
200
150
Power (W)
100
50
0
1E-4 1E-3 0.01 0.1 1 10 10030 0
Mounted on 1 in2 pad
TA=25OC
Time (sec)
P
DM
t
1
t
2
1.Duty Cycle, D= t1/t2
2.Pe r U nit Ba s e =R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
=50oC/W
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
Square Wave Pulse Duration (sec)
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Page 6
APM2095P
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0. 035
b2 5.207 5.4 61 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.2 45
E 6.35 6.73 0.250 0.265
e1 3.96 5.1 8 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.0 2 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
Min. Max. Min. Max .
Millimeters Inches
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Page 7
APM2095P
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp- down rate
Time 2 5°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 8
APM2095P
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 9
APM2095P
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw9
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