Page 1
APM2070P
P-Channel Enhancement Mode MOSFET
Features
• -20V/-5A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• TO-252 Package
••
=78mΩ(typ.) @ V
DS(ON)
=113mΩ(typ.) @ V
DS(ON)
=-10V
GS
GS
=-4.5V
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
GD S
Top View of TO-252
5
/
,,
P-Channel MOSFET
APM 2070P
Lead Free Code
Handling Code
Temp. Range
Package Code
APM 2070P U :
APM 2070P
XXXXX
Absolute Maximum Ratings
Package Code
U : T O -25 2
Operating Junction Temp. Range
C : -55 to 1 50° C
Handling Code
TU : Tu be TR : Tape & Re el
Lead Free Code
L : Lead Free Device Blan k : O rginal D evic e
XXXXX - Date Code
(T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage -20
DSS
V
Gate-Source Voltage ±16
GSS
*
I
Maximum Drain Current Continuous -5
D
IDM Maximum Drain Current Pulsed -20
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw1
Page 2
APM2070P
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
T
=25°C
A
=100°C
T
A
50
10
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
R
θJA
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
Symbol Parameter Test Condition
Thermal Resistance Junction to Ambient 50
= 25°C unless otherwise noted)
A
APM2070P
Min.
Typ. Max.
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
=0V , I
V
GS
V
=-16V , V
DS
V
DS=VGS
, I
DS
DS
=-250µA
GS
=-250µA
Gate Leakage Current VGS=±16V , VDS=0V
Drain-Source On-state
=
Resistance
=
Diode Forward Voltage IS=-0.5A , VGS=0V
SD
VGS=-10V , IDS=-5A
=-4.5V , IDS=-2.8A
V
GS
-20
=0V -1 µA
-0.7 -0.9 -1.5
±100
78 102
113 150
-0.7 -1.3
Dynamic>
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=-10V , IDS=-5A
V
DS
V
=-4.5V
GS
V
=-10V , IDS=-5A ,
DD
V
=-4.5V , R
GEN
VGS=0V
V
=-15V
DS
Fre
uency=1.0MHz
=6Ω
G
17 22
4
5.2
13 25
36 67
45 83
37 69
504
147
118
W
°C
°C
°C/W
Unit
V
V
nA
mΩ
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw2
Page 3
APM2070P
Typical Characteristics
Output Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
0246810
-VGS= 5,6,7,8,9,10V
-VGS=4V
-VGS=3V
-VGS=2V
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
Transfer Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
012345
Tj=125oC
Tj=25oC
Tj=-55oC
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.150
1.50
1.25
1.00
0.75
(Normalized)
0.50
0.25
-VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
0.135
-VGS=4.5V
0.120
0.105
0.090
0.075
DS(ON)-On-Resistance (Ω)
R
0.060
0.045
0 4 8 12 16 20
-VGS=10V
-ID - Drain Current (A)
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Page 4
APM2070P
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.24
0.20
0.16
0.12
0.08
RDS(ON)-On-Resistance (Ω)
0.04
0.00
12345678910
-VGS - Gate-to-Source Voltage (V)
-ID= 5A
Gate Charge
10
-VDS= 10 V
-I
= 5 A
DS
8
6
4
2
-VGS-Gate-Source Voltage (V)
0
0 5 10 15 20 25 30 35
Q
G - Total-Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
-VGS = 4.5V
1.6
-I
= 5A
DS
1.4
1.2
1.0
(Normalized)
0.8
RDS(ON)-On-Resistance (Ω)
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
700
600
480
360
Capacitance
Frequency=1MHz
Ciss
240
Capacitance (pF)
120
048121620
-VDS - Drain-to-Source Voltage (V)
Coss
Crss
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw4
Page 5
APM2070P
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
Tj=150oC
1
Tj=25oC
-IS-Source Current (A)
0.1
0.0 0.4 0.8 1.2 1.6
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
200
160
120
80
Power (W)
40
0
1E-4 1E-3 0.01 0.1 1 10 100
Time (sec)
1
Duty Cycle=0.5
D=0. 2
D=0. 1
0.1
D=0.05
D=0.02
Thermal Impedance
Normalized Effective Transient
SINGLE PULSE
0.01
1E-4 1E-3 0. 01 0.1 1 10 100
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
Square Wave Pulse Duration (sec)
1.Duty Cycle, D= t1/t 2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
www.anpec.com.tw5
=50oC/W
Page 6
APM2070P
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.18 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
Min. Max. Min. Max.
Millimeters Inches
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Page 7
APM2070P
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 8
APM2070P
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
A B C J T1 T2 W P E
330 ±3100 ± 2 13 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 9
APM2070P
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
www.anpec.com.tw9
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