Page 1
APM2070PD
P-Channel Enhancement Mode MOSFET
Features
• -20V/-3A , R
R
••
• Reliable and Rugged
••
••
• SOT-89 Package
••
=50mΩ(typ.) @ VGS=-4.5V
DS(ON)
=70mΩ(typ.) @ VGS=-2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
123
GDS
Top View of SOT-89
D
G
S
P-Channel MOSFET
APM 2070P
Lead Free Code
Handling Code
Temp. Range
Package Cod e
APM 2070P D :
APM 2070P
XXXXX
Absolute Maximum Ratings
Package Code
D : S O T-8 9
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e T R : T a pe & Reel
Lead Free Code
L : Lead Free Device Blank : Orginal Device
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V
Drain-Source Voltage -20
DSS
V
Gate-Source Voltage ±12
GSS
V
ID Maximum Drain Current – Continuous -3
IDM
Maximum Pulsed Drain Current (Pulse width ≤ 300 µs)
-12
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw1
Page 2
APM2070PD
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
TA=25°C
1.4
W
=100°C
T
A
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
R
θ
JA
Thermal Resistance – Junction to Ambient 85
0.5
°C
°C
°C/W
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM2070P
Min.
Typ. Max.
Unit
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
=0V , IDS=-250µA
V
GS
V
=-16V , VGS=0V -1 µA
DS
V
DS=VGS
Gate Leakage Current VGS=±12V , VDS=0V
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage IS=-1A , VGS=0V
SD
VGS=-4.5V , IDS=-3A
=-2.5V , IDS=-1.5A
V
GS
, IDS=-250µA
-20
-0.6 -0.75 -1
±100
50 70
70 100
-0.7 -1.3
V
V
nA
mΩ
V
Dynamicb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=-10V , IDS=-3A
V
DS
V
=-4.5V
GS
V
=-10V , IDS=-3A ,
DD
V
=-4.5V , RG=6Ω
GEN
VGS=0V
V
=-15V
DS
Fre
uency=1.0MHz
17.4 23
2.7
3.8
12 21
25 42
52 85
18 32
1118
293
231
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw2
Page 3
APM2070PD
Typical Characteristics
Output Characteristics
12.0
10.5
9.0
7.5
6.0
4.5
3.0
-ID-Drain Current (A)
1.5
0.0
012345678910
-VGS=3,4,5,6,7,8,9,10V
-VGS=2V
-VGS=1.5V
-VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
(Normalized)
0.6
0.4
-VGS(th)-Threshold Voltage
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Transfer Characteristics
12.0
10.5
9.0
7.5
6.0
4.5
-ID-Drain Current (A)
3.0
1.5
0.0
Tj=125oC
Tj=25oC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=-55oC
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
DS(ON)-On-Resistance (Ω)
R
0.03
0.02
0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
-VGS=2.5V
-VGS=4.5V
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw3
Page 4
APM2070PD
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.090
0.084
0.078
0.072
0.066
0.060
0.054
0.048
0.042
RDS(ON)-On-Resistance (Ω)
0.036
0.030
012345678910
-VGS - Gate-to-Source Voltage (V)
-ID= 3A
Gate Charge
5
-VDS= 10 V
-I
= 3 A
DS
4
3
RDS(ON)-On-Resistance
On-Resistance vs. Junction T emperature
1.5
-VGS = 4.5V
1.4
-I
= 3A
DS
1.3
1.2
1.1
1.0
(Normalized)
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
1800
1600
1400
1200
1000
RON@Tj = 25°C : 50m
Capacitance
Frequency=1MHz
Ciss
Ω
2
1
-VGS-Gate-Source Voltage (V)
0
0 4 8 121620
Q
G - Total-Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
800
600
Capacitance (pF)
400
200
00
048121620
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
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Page 5
APM2070PD
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10
Tj=150oC
1
Tj=25oC
-IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
160
120
80
Power (W)
40
0
1E-4 1E-3 0.01 0.1 1 10 100
300
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
D=0.05
D=0.02
D=0.01
SINGLE PULSE
1E-4 1E-3 0.01 0.1 1 10 100 300
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
Square Wave Pulse Duration (sec)
P
DM
t
1
t
2
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
www.anpec.com.tw5
=85oC/W
thJA
Page 6
APM2070PD
Packaging Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
H
L
123
a
E
C
Dim
B1
B
e
e1
A
a
Millimeters Inches
Min. Max. Min. Max.
A 1.40 1.60 0.055 0.063
B 0.40 0.56 0.016 0.022
B1 0.35 0.48 0.014 0.019
C 0.35 0.44 0.014 0.017
D 4.40 4.60 0.173 0.181
D1 1.35 1.83 0.053 0.072
e 1.50 BSC 0.059 BSC
e1 3.00 BSC 0.118 BSC
E 2.29 2.60 0.090 0.102
H 3.75 4.25 0.148 0.167
L 0 .80 1.20 0.031 0.047
α
10
°
10
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw6
Page 7
APM2070PD
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp- down ra t e
Time 2 5°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 8
APM2070PD
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
TO-252
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 9
APM2070PD
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
www.anpec.com.tw9
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