Page 1
APM2055N
N-Channel Enhancement Mode MOSFET
Features
• 20V/12A, R
R
R
• Super High Dense Cell Design
••
•
High Power and Current Handling Capability
••
••
•
TO-252 and SOT-223 Packages
••
=55mΩ(typ.) @ VGS=10V
DS(ON)
=75mΩ(typ.) @ VGS=4.5V
DS(ON)
=140mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
123
GDS
Top View of T O-252
Applications
• Switching Regulators
• Switching Converters
Ordering and Marking Information
123
SDG
Top View of SOT-223
D
G
S
N-Channel MOSFET
APM 2055N
Handling Code
Temp. R ange
Package Code
APM 2055N U :
APM2055N V :
APM 2055N
XXXXX
APM 2055N
XXXXX
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
I
D
I
DM
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Drain-Source Voltage 20
Gate-So urce Voltage ±16
Maximum Drain Current – Continuous 12
Maximum Drain Current – Pulsed 20
Parameter Rating Unit
Package Code
U : T O-25 2 V : S O T -2 2 3
Operation Junction Temp. R ange
C : -55 to 150 C
Handling Code
TR : Tape & Reel
XXXXX
XXXXX
= 25°C unless otherwise noted)
A
°
- Da te C o d e
- Da te C o d e
V
A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
www.anpec.com.tw1
Page 2
APM2055N
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Paramet er Test Condition
Static
BV
I
V
DSS
GS(th)
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Parameter Rating Unit
TO-252 50
TA=25°C
SOT-223 3
TO-252 10
T
=100°C
A
= 25°C unless otherwise noted)
A
=0V, ID=250µA
V
GS
=16V, VGS=0V
V
DS
V
DS=VGS
, ID=250µA
SOT-223 1.2
= 25°C unless otherwise noted)
A
APM2055N
Min. Typ. Max.
20 V
1
0.7 0.9 1.5 V
W
°
°
C/W
°
C
C
Unit
A
µ
R
I
GSS
DS(ON)
Gate Leakage Current
Drain-Source On-state
Resistance
V
Diode For w ar d Voltage IS=2A, VGS=0V
SD
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
Total Gate Char g e
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time 9.2 18.6
t
Turn-on Rise Time
r
Turn-off Delay Time
t
Turn-off Fall Time
f
=±16V, VDS=0V
V
GS
VGS=10V, ID=12A
55 70
±
100
VGS=4.5V, ID=6A 75 90
=2.5V, ID=2A
V
GS
140 160
0.7 1.3 V
=15V, VGS=4.5V,
V
DS
=1.5A
I
D
78.5
2.5
1.5
V
=15V, ID=2A,
DD
=10V, RG=6
V
GS
Ω
14 27
31 58
16 21
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nA
m
nC
ns
Ω
Page 3
APM2055N
Typical Characteristics
Output Characteristics
20
16
12
8
ID-Drain Current (A)
4
0
012345
VGS=4,5,6,7,8,9,10V
VGS=3V
VGS=2V
VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
IDS=250uA
Transfer Characteristics
20
16
12
8
ID-Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.125
0.100
TJ=125°C
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold V oltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
VGS=4.5V
0.075
0.050
0.025
RDS(ON)-On-Resistance (Ω)
0.000
0 2 4 6 8 10 12 14 16 18 20
VGS=10V
ID - Drain Current (A)
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Page 4
APM2055N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.200
0.175
0.150
0.125
0.100
0.075
RDS(ON)-On-Resistance (Ω)
0.050
0.025
012345678
VGS - Gate-to-Source Voltage (V)
Gate Charge
5
VDS=15V
ID=1.5A
4
ID=5A
On-Resistance vs. Junction Temperature
2.25
VGS=4.5V
2.00
ID=5A
1.75
1.50
1.25
1.00
(Normalized)
0.75
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
600
500
Frequency=1MHz
3
2
1
VGS-Gate-Source Voltage (V)
0
012345678
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
400
300
200
Capacitance (pF)
100
0
0 5 10 15 20
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
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Page 5
APM2055N
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
1
IS-Source Current (A)
0.1
TJ=150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ=25°C
VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
250
200
150
100
Power (W)
50
0
1E-3 0.01 0.1 1 10 100
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
Thermal Impedance
Normalized Effective Transient
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
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Page 6
APM2055N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
B1
H E
K
e
e1
B
A
A1
b
a
c
L
Millimeters InchesDim
Min. Max. Min. Max.
A 1.50 1.80 0.06 0.07
A1 0.02 0.08
B 0.60 0.80 0.02 0.03
B1 2.90 3.10 0.11 0.12
c 0.28 0.32 0.01 0.01
D 6.30 6.70 0.25 0.26
E 3.30 3.70 0.13 0.15
e 2.3 BSC 0.09 BSC
e1 4.6 BSC 0.18 BSC
H 6.70 7.30 0.26 0.29
L 0.91 1.10 0.04 0.04
K 1.50 2.00 0.06 0.08
α
β
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
0
°
13
°
10
°
0
°
13
10
°
°
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Page 7
APM2055N
Package Information (Cont.)
TO-252( Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.0 35
b2 5.207 5.461 0.205 0.2 15
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0. 210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.1 8 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.0 2 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
Min. Max. Min. Max .
Millimeters Inches
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Page 8
APM2055N
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
2.5mm
≥≥≥≥
pkg. thickness < 2.5mm and
pkg. volume
350 mm³
≥≥≥≥
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 9
APM2055N
Reliability test program
T est item Method Description
SOLDERABILITY MIL- STD-8 83D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape
W
t
E
F
A
Po
J
P
P1
Ao
C
D
Bo
Ko
D1
T2
B
Application
A B C J T1 T2 W P E
330±162±1.5
SOT-223
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05
Application
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
TO-252
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
12.75
0.15
T1
±
2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 10
APM2055N
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 223
TO- 252
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
16 13.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
www.anpec.com.tw10
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