Datasheet APM2054ND, APM2054NU Datasheet (Anpec)

APM2054N

N-Channel Enhancement Mode MOSFET

Features

• 20V/12A, R

R
R

••

•

Super High Dense Cell Design

••

••

•

High Power and Current Handling Capability

••

••

•

TO-252, SOT-89 and SOT-223 Packages

••

=35mΩ(typ.) @ VGS=10V

DS(ON)

=45mΩ(typ.) @ VGS=4.5V

DS(ON)

=110mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Top View of TO-252

Applications

• Switching Regulators

• Switching Converters

Top View of SOT-223

Ordering and Marking Information

APM2054N

AP M 2054N D /V :

APM2054N
XXXXX

Lead Free Code
Handling Code
Tem p R ange
Package C ode

Package C ode

Package C ode

D : S O T-89 V : SO T-223 U : TO-252

Operation Junction Tem p. Range

C : -55 to 150 C

Handling Code

TR : Tape & Reel
Lead Feed C ode
L : Lead Free D evice B lank : Original Device

XXXXX - Date Code

123

GDS

123

SDG

°

°

123

GDS

Top View of SOT-89

D

G

S

N-Channel MOSFET

AP M 2054N U :

APM2054N
XXXXX

Absolute Maximum Ratings (T

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID*

IDM

PD*

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

Maximum Power Dissipation

T

=25°C TO-252 5 W

A

TO-252

SOT-223/SO T-89

TO-252 25

SOT-223/SO T-89

V

10

4

A

12

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APM2054N

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

TA=25°C SOT-223/SOT-89 1.25

PD*

TJ

T

STG

Maximum Power Dissipation

T

=100°C

A



TO-252

SOT-223/SOT-89 0.5

Maximum Junction Temperature
Storage Temperature Range -55 to 150 °C

2

150 °C

W

* Surface Mounted on FR4 Board, t ≤ 10 sec.



Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

APM2054N

Min. Typ. Max.

Unit

Static

BV

Drain-Source Breakdown Voltage

DSS

I

Zero G ate Voltage Drain Current VDS=16V, VGS=0V 1

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current

GSS

V

=0V, IDS=250µA

GS

V

DS=VGS

V

GS

, IDS=250µA

=±16V, VDS=0V

20 V

µA

0.7 0.9 1.5 V
±100

nA

VGS=10V, IDS=12A 35 40

R

Drain-Source O n-state Resistance

DS(ON)

VGS=4.5V, IDS=6A 45 54
V

=2.5V, IDS=2A 110 130

GS

mΩ

VSD Diode Forward Voltage ISD=6A, VGS=0V 0.7 1.3 V

Dynamic

Qg Total Gate Charge 11 13

V

=10V, VGS=4.5V,

Qgs Gate-Source Charge 3.8
Qgd Gate-Drain Charge

t

Turn-on Delay Time 12 24

d(ON)

tr Turn-on Rise Tim e 10 20

t

Turn-off Delay Tim e 40 74

d(OFF)

tf Tu rn-o ff F a ll Tim e

C

Input Capacitance 450

iss

C

Output Capacitance 100

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

DS

I

=6A

DS

=10V, IDS=1A,

V

DD

=4.5V, RG=6Ω

V

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

5.2

20 38

60

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nC

ns

pF

APM2054N

Typical Characteristics

Output Characteristics

12

9

6

ID-Drain Current (A)

3

0

0246810

VGS= 4, 5, 6, 7, 8, 9, 10V

VGS=3V

VGS=2V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Temperature

1.50

1.25

IDS=250uA

Transfer Characteristics

12

9

6

ID-Drain Current (A)

3

0

012345

Tj=25oC

Tj=125oC

Tj=-55oC

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.07

0.06

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

0.05

0.04

0.03

RDS(ON)-On-Resistance (Ω)

0.02

0.01
0246810

VGS=10V

VGS=4.5V

ID - Drain Current (A)

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APM2054N

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.10

0.08

0.06

0.04

0.02

RDS(ON)-On-Resistance (Ω)

0.00
0246810

ID= 6A

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Junction T emperature

0.07

VGS=10V
ID=12A

0.06

0.05

On-Resistance vs. Junction T emperature

2.00

VGS=10V
ID=12A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Gate Charge

10

VDS=10V
ID=6A

8

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

6

4

2

VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25

QG -Total Gate Charge (nC)

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APM2054N

Typical Characteristics

Capacitance

750

625

500

375

250

Capacitance (pF)

125

0

0 5 10 15 20

VDS - Drain-to-Source Voltage (V)

Single Pulse Power

150

Frequency=1MHz

Ciss

Coss

Crss

TO-252

Source-Drain Diode Forward V oltage

12

10

TJ=150°C TJ=25°C

IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD -Source-to-Drain V oltage (V)

Single Pulse Power

350

SOT-223/89

120

90

60

Power (W)

30

0

1E-4 1E-3 0.01 0.1 1 10 100

Time (sec)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

300

280

210

140

Power (W)

70

0

1E-4 1E-3 0.01 0.1 1 10 100

300

Time (sec)

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APM2054N

Typical Characteristics

Normalized Thermal Transient Impedence, Junction to Ambient

2
1

Duty Cycle=0.5
D=0.2

0.1

D=0.1

D=0.05
D=0.02

0.01

Thermal Impedance

SINGLE PULSE

Normalized Effective Transient

1E-3

1E-4 1E-3 0.01 0.1 1 10 100 300

Normalized Thermal Transient Impedence, Junction to Ambient

2
1

Square Wave Pulse Duration (sec)

1.Duty Cycle, D= t1/t2

2.Per Unit Base=R

3.TJM-TA=PDMZ

4.Surface Mounted

thJA

thJA

TO-252

=50oC/W

SOT-223/89

Duty Cycle=0.5

D=0.2

0.1

D=0.1
D=0.05

D=0.02

0.01

Thermal Impedance

SINGLE PULSE

Normalized Effective Transient

1E-3

1E-4 1E-3 0.01 0.1 1 10 100 300

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

Square Wave Pulse Duration (sec)

1.Duty Cycle, D= t1/t2

2.Per Unit Base=R

3.TJM-TA=PDMZ

4.Surface Mounted

thJA

thJA

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=100oC/W

APM2054N

Package Information

TO-252( Reference JEDEC Registration TO-252)

E

b2

A

C1

L2

D

H

L1

L

b

e1

C

A1

Dim

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0. 035

b2 5.207 5.4 61 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.2 45
E 6.35 6.73 0.250 0.265

e1 3.96 5.1 8 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020
L1 0.64 1.0 2 0.025 0.040
L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

Min. Max. Min. Max .

Millimeters Inches

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APM2054N

Package Information

SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)

D

D1

H

L

123

a

E

C

Dim

B1

B

e

e1

A

a

Millimeters Inches

Min. Max. Min. Max.

A 1 .40 1.60 0.055 0.063
B 0 .40 0.56 0.016 0.022

B1 0 .35 0.48 0.014 0.019

C 0.35 0 .44 0 .014 0.017
D 4.40 4 .60 0 .173 0.181

D1 1.35 1 .83 0 .053 0.072

e 1.50 BSC 0.059 BSC

e1 3.00 B SC 0.118 BSC

E 2 .29 2.60 0.090 0.102

H 3.75 4 .25 0 .148 0.167

L 0.80 1.20 0.031 0.047

α

10

°

10

°

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

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APM2054N

Package Information

SOT-223( Reference JEDEC Registration SOT-223)

D

B1

H E

K

e

e1

B

A

A1

b

a

c

L

Millimeters InchesDim

Min. Max. Min. Max.

A 1.50 1.80 0.06 0.07

A1 0.02 0.08

B 0.60 0.80 0.02 0.03

B1 2.90 3.10 0.11 0.12

c 0.28 0.32 0.01 0.01
D 6.30 6.70 0.25 0.26
E 3.30 3.70 0.13 0.15

e 2.3 BSC 0.09 BSC

e1 4.6 BSC 0.18 BSC

H 6.70 7.30 0.26 0.29

L 0.91 1.10 0.04 0.04

K 1.50 2.00 0.06 0.08

α
β

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

0

°

13

°

10

°

0

°

13

10

°

°

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APM2054N

Physical Specifications

Terminal Mate rial So lde r-Plated Co p per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature mainta ined abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM2054N

Reflow Condition (IR/Convection or VPR Reflow)

T

P

Ramp-up

T

L

Tsmax

Tsmin

Temperature

ts

Preheat

25

t 25:C to P e a k

tp

t

L

Ramp-down

Critical Zone

T

to T

L

P

Time

Classificatin Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Large Body Small Body Large Body Small Body
Average ramp-up rate
(T

to TP)

L

Preheat

- Temperature Min (Tsmin)

- Temperature Mix (Tsmax)

- Time (min to max)(ts)

Tsmax to TL

- Temperature(T

- Time (t

L

)

L

)

Peak Temperature(Tp)

Time within 5°C of actual Peak
Temperature(tp)

225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C

Ramp-down Rate 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds
Time 25°C to Peak Temperature

6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

150°C
200°C

60-180 seconds

3°C/second max

183°C

60-150 seconds

217°C

60-150 seconds

6°C/second max. 6°C/second max.

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APM2054N

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

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APM2054N

Application

TO-252

Application

SOT-89

Application

SOT-223

A B C J T1 T2 W P E

330 ±3100 ± 213 ± 0. 5 2 ± 0.5

F D D1 Po P1 Ao Bo Ko t

7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
A B C J T1 T2 W P E

178 ±170 ± 213.5 ± 0.15 3 ± 0.15 14 ± 2 1.3 ± 0.3

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.05 1.5± 0.1 1.5± 0.1 4.0 ± 0.1 2.0 ± 0.1 4.8 ± 0.1 4.5± 0.1 1.80± 0.1 0.3±0.013
A B C J T1 T2 W P E

12.75

330±162±1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05

0.15

±

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 89

SOT- 223

TO- 252

12 9.3 1000
12 9.3 2500
16 13.3 2500

16.4 + 0.3

-0.2

2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1

2.5± 0.5

16+ 0.3

- 0.1

12 + 0.3

12 - 0.1

8 ± 0.1 1.75± 0.1

8 ± 0.1 1.75± 0.1

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, T aipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2003

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