Page 1
APM2023N
N-Channel Enhancement Mode MOSFET
Features
• 20V/12.8A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
TO-252 Package
••
=20mΩ(typ.) @ VGS=4.5V
DS(ON)
=29mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM2023 N
Handling Code
Temp. Range
Package Code
Package Code
U : T O -252
Operation Junction Temp. Range
C :-55 to 150 C
Handling Code
TR : Tape & Reel
123
GDS
Top View of TO-252
D
G
S
N-Channel MOSFET
°
APM2023N U :
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
APM2023N
XXXXX
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Parameter Rating Unit
Drain-Source Voltage 20
Gate-Source Voltage ±12
Maximum Drain Current – Continuous 12.8
Maximum Drain Current – Pulsed 50
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
www.anpec.com.tw1
Page 2
APM2023N
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Notes
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Parameter Rating Unit
TA=25°C
=100°C
T
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
V
=16V , VGS=0V 1
DS
V
V
, IDS=250µA
DS=VGS
=±12V , VDS=0V
GS
VGS=4.5V , IDS=12.8A
V
=2.5V , IDS=6.6A
GS
VDS=10V , IDS= 6A
V
=4.5V ,
GS
=10V , IDS=1A ,
V
DD
V
=4.5V , RG=0.2
GEN
V
=0V
GS
V
=15V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
50
10
APM2023N
Min. Typ. Max.
18 V
0.5 0.7 1
100
±
20 23
29 35
0.8 1.1
15 18
5.4
3
25 47
21 42
65 120
35 65
780
165
105
W
°
°
C/W
°
C
C
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
www.anpec.com.tw2
Page 3
APM2023N
Typical Characteristics
Output Characteristics
50
45
40
35
30
25
20
15
ID-Drain Current (A)
10
5
0
012345678910
VGS=3,4,5,6,7,8,9,10V
VGS=2V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
1.00
Transfer Characteristics
30
25
20
15
TJ=125°C
10
ID-Drain Current (A)
TJ=25°C
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.050
0.045
0.040
0.035
VGS=2.5V
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
0.030
0.025
0.020
VGS=4.5V
RDS(ON)-On-Resistance (Ω)
0.015
0.010
0 5 10 15 20 25 30
ID - Drain Current (A)
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Page 4
APM2023N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
RDS(ON)-On-Resistance (Ω)
0.01
0.00
012345678910
VGS - Gate-to-Source V oltage (V)
Gate Charge
10
VDS=10V
ID=6A
8
6
ID=6.6A
On-Resistance vs. Junction T emperature
2.00
VGS=4.5V
1.75
ID=12.8A
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
1200
1000
800
Frequency=1MHz
Ciss
4
2
VGS-Gate-Source Voltage (V)
0
0 5 10 15 20 25
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
600
400
Capacitance (pF)
200
0
048121620
VDS - Drain-to-Source V oltage (V)
Coss
Crss
www.anpec.com.tw4
Page 5
APM2023N
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
1
TJ=25°C
IS-Source Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
80
60
40
Power (W)
20
0
0.01 0.1 1 10
Time (sec)
30
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
D=0.02
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
30
Square Wave Pulse Duration (sec)
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Page 6
APM2023N
Packaging Information
TO-252 (Reference JEDEC Registration TO-252)
E
b2
A
C1
L2
D
H
L1
L
b
e1
C
A1
Dim
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0. 508 0. 89 0. 020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3. 96 5.18 0.1 56 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0. 64 1.02 0.0 25 0. 040
L2 0. 89 2. 032 0.035 0.080
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
Min. Max. Min. Max .
Millimeters Inches
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Page 7
APM2023N
Physical Specifications
Terminal Mate rial Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
www.anpec.com.tw7
Page 8
APM2023N
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
P
P1
Ao
J
W
E
F
Po
A
t
D
Bo
D1
C
Ko
T2
B
Application
TO-252
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
16.4 + 0.3
-0.2
2.5± 0.5
T1
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
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Page 9
APM2023N
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
www.anpec.com.tw9
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