Page 1
N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2007
Pin Description
Ordering and Marking Information
Features
Applications
• 20V/30A , R
DS(ON)
=6mΩ(typ.) @ VGS=10V
R
DS(ON)
=8mΩ(typ.) @ VGS=4.5V
R
DS(ON)
=16mΩ(typ.) @ VGS=2.5V
••
••
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
••
••
•
Reliable and Rugged
••
••
• TO-252 Package
• Power Management in Computer, Portable
Equipment and Battery Powered Systems.
T op View of T O-252
GDS
123
APM2007N
Handling Code
Temp. Range
Package Code
Package Code
U : TO- 25 2
Operation Junction Temp . Range
C :-55 to 15 0 C
Handling Code
TR : Tape & Reel
°
APM2 007N U :
XXXXX - Date Code
APM2 007N
XXXXX
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
V
DSS
Drain-Source Voltage 20
V
GSS
Gate-Source Voltage ±16
V
N-Channel MOSFET
G
S
D
Page 2
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw2
APM2007
Symbol
Parameter Rating Unit
I
D
*
Maximum Drain Current – Continuous 30
I
DM
Maximum Drain Current – Pulsed 70
A
TA=25°C
50
P
D
Maximum Power Dissipation
T
A
=100°C
10
W
T
J
Maximum Junction Temperature 150
°
C
T
STG
Storage Temperature Range -55 to 150
°
C
R
θ
jA
Thermal Resistance – Junction to Ambient 50
°
C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM2007N
Symbol Parameter Test Condition
Min. T
y
p. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
20 V
I
DSS
Zero Gate Voltage Drain
Curren t
V
DS
=18 V , VGS=0V 1
µ
A
V
GS(th)
Gate Threshold Voltage
V
DS=VGS
, IDS=250µA
11.52
V
I
GSS
Gate Leakage Current
V
GS
=±16V , VDS=0V
±
100
nA
VGS=10 V , IDS=30A
67.5
VGS=4.5V , IDS=20A
89.5
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , IDS=15A
16 18
m
Ω
V
SD
a
Diode Forward Voltage ISD=4A , VGS=0V
0.7 1.3
V
Dynamic
b
Q
g
Total Gate Charge
28 35
Q
gs
Gate-Source Charge
5.2
Q
gd
Gate-Drain Cha rg e
VDS=10 V , IDS= 5A
V
GS
=4.5V ,
7.6
nC
t
d(ON)
Turn-on Delay Time
17 32
T
r
Turn-on Rise Time
15 29
t
d(OFF)
Turn-off Dela y Tim e
45 56
T
f
Turn-off Fall Time
VDD=10V , IDS=1A ,
V
GEN
=4.5V , RG=0.2
Ω
25 32
ns
C
iss
Input Capacitance
2293
C
oss
Output Capacitance
570
C
rss
Reverse Transfer Capacitance
VGS=0V
VDS=15V
Frequency=1.0MHz
390
pF
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Absolute Maximum Ratings (Cont.) (T
A
= 25°C unless otherwise noted)
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Page 3
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw3
APM2007
0 10203040506070
0
2
4
6
8
10
12
14
16
0246810
0
5
10
15
20
25
30
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
25
30
Typical Characteristics
VGS=2V
ID-Drain Current (A)
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
VGS - Gate-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction T emperature (°C)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250uA
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
ID - Drain Current (A)
VGS=10V
Output Characteristics
ID-Drain Current (A)
VGS=3,4,5,6,7,8,9,10V
VDS - Drain-to-Source V oltage (V)
VGS=4.5V
Page 4
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw4
APM2007
12345678910
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0 5 10 15 20
0
500
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25 30 35
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Typical Characteristics
VGS - Gate-to-Source V oltage (V)
RDS(ON)-On-Resistance (Ω)
ID=30A
On-Resistance vs. Gate-to-Source Voltage
RDS(ON)-On-Resistance (Ω)
(Normalized)
On-Resistance vs. Junction T emperature
VGS=4.5V
ID=20A
TJ - Junction Temperature (°C)
VDS - Drain-to-Source V oltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
QG - Gate Charge (nC)
VGS-Gate-Source Voltage (V)
VDS=10V
ID=5A
Frequency=1MHz
Page 5
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw5
APM2007
1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
30
Source-Drain Diode Forward Voltage
IS-Source Current (A)
TJ=150°C
TJ=25°C
VSD -Source-to-Drain V oltage (V)
Typical Characteristics
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
1E-3 0.01 0.1 1 10 100 1000
0
50
100
150
200
250
Page 6
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw6
APM2007
TO-252( Reference JEDEC Registration TO-252)
Millimeters Inches
Dim
Min. Max. Min. Max .
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0. 035
b2 5.207 5.4 61 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.1 8 0.156 0. 204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.0 2 0.025 0. 040
L2 0.89 2.032 0.035 0.080
L2
D
L1
b
b2
E
C1
A
H
L
C
A1
e1
Packaging Information
Page 7
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw7
APM2007
Reflow Condition (IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature
10 –20 seconds 60 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature
6 minutes max.
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Term in al Ma te rial Solde r-Plated Cop per (S olde r M ate rial : 90/10 or 63/37 S nPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Page 8
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw8
APM2007
Carrier Tape & Reel Dimensions
Application A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko tTO-252
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability test program
Page 9
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
www.anpec.com.tw9
APM2007
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
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