Page 1
D
P-Pack
G
S
POWER MOS IV
®
APL1001P 1000V 18.0A 0.60W
HERMETIC PACKAGE
N-CH AN NEL ENHANCEMENT MODE HI GH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
IDM, l
LM
V
GS
P
D
TJ,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
APL1001P
1000
18
72
±30
520
4.16
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
ID(ON)
(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
(V
> ID(ON) x RDS(ON) Max, VGS = 8V)
DS
= 0V, ID = 250 µA)
GS
2
(VGS = 10V, 0.5 ID [Cont.])
, VGS = 0V)
DSS
= 0.8 V
DS
= ±30V, V
GS
DSS
DS
, VGS = 0V, TC = 125°C)
= 0V)
MIN TYP MAX
1000
18
24
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QCS
Characteristic
Junction to Case
Case to Sink
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.06
0.60
25
250
±100
0.24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
UNIT
°C/W
APT Website - http://www.advancedpower.com
USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
050-5899 Rev - 8-2001
Page 2
DYNAMIC CHARACTERISTICS APL1001P
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
Symbol
C
iss
C
oss
C
rss
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 0.5 V
DSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
MIN TYP MAX
6000 7200
775 1080
285 430
14 28
14 28
60 92
14 20
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
Characteristic
Safe Operating Area
V
Test Conditions / Part Number
= 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
DS
MIN TYP MAX
325
UNIT
pF
ns
UNIT
Watts
0.3
D=0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.001
10
40
30
20
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
VGS=6.5V, 7.0V, 8.0V,
10V & 15V
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
6.0 V
5.5 V
-2
10
-1
10
40
VGS= 15V, 10V, 8V, 7V & 6.5V
30
20
1.0 10
6.0 V
5.5 V
050-5899 Rev - 8-2001
10
, DRAIN CURRENT (AMPERES)
D
I
0
020406080100 0 4 8121620
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
5.0 V
4.5 V
10
, DRAIN CURRENT (AMPERES)
D
I
0
5.0 V
4.5 V
Page 3
APL1001P
20
VDS> ID (ON) x RDS (ON)MAX.
15
10
5
, DRAIN CURRENT (AMPERES)
D
0
02468 010203040
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
15
TJ = -55°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C TJ = -55°C
1.30
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
(ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
0.80
1.15
1.10
1.05
10
1.00
0.95
5
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
T
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
0.90
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.85
1.2
1.1
1.0
1.5
0.9
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
DS
0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
100
(NORMALIZED) VOLTAGE (NORMALIZED)
0.8
(TH), THRESHOLD VOLTAGE BV
GS
0.7
0.6
20,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10,000
5,000
10
1
, DRAIN CURRENT (AMPERES) R
D
I
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1 10 100 1000 .01 .1 1 10 50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1mS
10mS
100mS
DC
C, CAPACITANCE (pF) V
1,000
500
100
C
iss
C
oss
C
rss
050-5899 Rev - 8-2001
Page 4
APL1001P
P-Pack Package Outline
41.53 (1.635)
41.02 (1.615)
35.18 (1.385)
34.67 (1.365)
28.70 (1.130)
3.43 (.135)
2.92 (.115)
(4-Places)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
11.63 (.458)
11.13 (.438)
28.45 (1.120)
12.45 (.490)
11.94 (.470)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5899 Rev - 8-2001
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
4.39 (.173)
4.14 (.163)
(4 Places)
3.43 (.135)
2.92 (.115)
(4-Places)
4.06 (.160)
3.81 (.150)
(5 Places)
10.92 (.430)
10.67 (.420)
.635 (.025)
.381 (.015)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
5.33 (.210)
4.83 (.190)
Source Source Sense
Drain Gate
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