Datasheet AP562-F Datasheet (TriQuint)

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Product Features

• 3.3 – 3.8 GHz

• +39.4 dBm P1dB

• 11.5 dB Gain

• 2.0% EVM @ 30 dBm Pout

• +12 V Supply Voltage

• Lead-free/green/RoHS-compliant

5x6 mm power DFN package

Applications

• WiMAX CPE/BTS

Specifications

Parameter Units Min Typ Max

Operational Bandwidth GHz 3.3 3.8
Test Frequency GHz 3.5
Output Channel Power dBm +30
Power Gain dB 11.5
Input Return Loss dB 15
Output Return Loss dB 6.7
Error Vector Magnitude % 1.9
Operating Current, Icc mA 685
RF Switching Speed ns 50
Collector Efficiency % 11.7
Output P1dB dBm 39.4
Quiescent Current, Icq mA 400

(4)

Vpd

V +5

Vcc V +12

Notes:

1. Test conditions unless otherwise noted: T = 25ºC, Vpd = +5V, Vcc = +12, Icq = 400mA at Pout = +30

dBm and f = 3.5 GHz.

2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels signal, 9.5 d B

PAR @ 0.01%.

3. Switching speed: 50% TTL to 100/0% RF.

4. Vpd used for device power down. (low=RF off)

5. Capable of handling 10:1 VSWR @ 12 V

, WiMax signal, Pout

DC

The AP562 is a high dynamic range broadband power
amplifier in a surface mount package. The single-stage
amplifier has 11.5 dB gain, while being able to achieve
high performance for 3.3–3.8 GHz WiMAX applications
with up to 39.4 dBm of compressed 1dB power.

The AP562 uses a high reliability +12V InGaP/GaAs HBT
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
AP562 to operate directly off a commonly used +12V
supply and has the added feature of a +5V power down
control pin. RoHS-compliant 5x6mm DFN package is
surface mountable to allow for low manufacturing costs to
the end user.

The AP562 is targeted for use in a balanced or single ended
configuration for WiMAX applications where high linearity
and high power is required.

Absolute Maximum Rating

Parameter Rating

Pin max (CW into 50Ω load)
Storage Temperature -55 to +125 ºC
Max Junction Temperature, T

Thermal Resistance, Θ

Operation of this device above any of these parameters may cause permanent damage.

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JC

158 ºC

J,max

+33 dBm

8.4 °C / W

Product Description

Typical Performance

Parameter Units Typical

Test Frequency GHz 3.4 3.5 3.6
Channel Power dBm +30 +30 +30
Power Gain dB 11.5 11.5 11.3
Input Return Loss dB 11 15 15
Output Return Loss dB 5.6 6.7 5.9
Error Vector Magnitude % 2.2 1.9 1.7
Operating Current, Icc mA 720 685 670
Collector Efficiency % 11.1 11.7 12.2
Output P1dB dBm 39.5 39.4 38.7
Quiescent Current, Icq mA 400
Vpd V +5
Vcc V +12

= 30dBm.

AVG

Ordering Information

Part No. Description

AP562-F WiMAX 12V 8W HBT Amplifier
AP562-PCB3500 3.4-3.6 GHz Fully Assembled Evaluation Board

Standard T/R size = 500 pieces on a 7” reel.

Functional Diagram

Function Pin No.

RFIN 4,5,6

RF

9,10,11

OUT

I

14

REF

V

1

BIAS

NC 2,3,7,8,12,13

Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Application Circuit PC Board Layout

Vcc

Vpd

GND

Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz
copper, ε

= 2.45, Microstrip line details: width = .042”, spacing = .050”

r

Notes:

1. Please note that for reliable operation, the evaluation board will have to be mounted to a much

2. The area around the module underneath the PCB should not contain any soldermask in order to

3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.

Baseplate Configuration

larger heat sink during operation and in laboratory environments to dissipate the power
consumed by the device. The use of a convection fan is also recommended in laboratory
environments.

maintain good RF grounding.

Evaluation Board Bias Procedure

Following bias procedure is recommended to ensure proper functionality of AP562 in a laboratory environment. The sequencing is not
required in the final system application.

Turn-on Sequence:

1. Attach input and output loads onto the evaluation board.

2. Turn on power supply Vcc = +12V.

3. Turn on power supply Vpd = +5V.

4. Turn on RF power.

Turn-off Sequence:

1. Turn off RF power.

2. Turn off power supply Vpd = +5V.

3. Turn off power supply Vcc = +12V.

Bias. Voltage (V)

Vcc +12
Vpd +5

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Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Typical Device Data

S-Parameters (VCC= +12 V, ICC = 400 mA, 25 °C, unmatched 50 ohm system)

S(1,1)

40

Gain / Maximum Stable Gain

30

20

10

Gain (dB)

0

-10

-20

DB(GMax())
AP562

0246

DB(|S(2,1)|)
AP562

Frequency (GHz)

AP562

4

.

0

2

.

0

0

0.2

2

.

0

-

4

.

0

-

Notes:

The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.

S-Parameters (VCC = +12 V, ICQ = 400 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)

Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 -0.79 -175.42 27.05 124.23 -41.01 40.51 -1.10 -104.38
100 -0.40 -177.67 22.28 107.37 -41.94 16.01 -1.53 -137.35
300 -0.31 179.53 14.07 90.92 -41.94 2.09 -1.68 -163.78
500 -0.29 177.89 9.72 82.63 -41.62 0.94 -1.77 -171.20
700 -0.29 175.84 6.87 75.39 -41.31 8.79 -1.81 -175.14
900 -0.34 173.80 4.76 69.22 -41.51 0.79 -1.71 -177.04

1100 -0.36 171.63 3.14 62.91 -41.31 -1.63 -1.63 -178.74
1300 -0.37 168.83 1.85 56.68 -41.31 -5.01 -1.60 179.84
1500 -0.35 165.93 0.86 50.02 -41.31 -8.04 -1.57 178.03
1700 -0.47 161.85 0.96 41.71 -40.35 -13.12 -1.66 174.97
1900 -0.50 158.09 0.45 34.33 -40.35 -18.22 -1.61 172.45
2100 -0.60 154.55 0.05 26.46 -40.18 -24.14 -1.51 170.10
2300 -0.69 150.84 -0.24 17.89 -40.09 -31.86 -1.38 167.43
2500 -0.82 147.61 -0.40 9.26 -39.83 -40.50 -1.28 164.93
2700 -0.94 144.72 -0.44 -0.25 -39.58 -51.10 -1.17 162.74
2900 -1.16 142.23 -0.27 -11.07 -39.33 -65.09 -1.02 160.45
3100 -1.51 140.70 -0.02 -23.54 -38.79 -81.01 -0.81 158.40
3300 -2.02 140.58 0.25 -38.88 -38.06 -102.23 -0.59 156.27
3500 -2.49 142.81 0.36 -58.18 -37.59 -129.91 -0.33 153.91
3700 -2.56 147.66 -0.16 -80.37 -37.20 -160.59 -0.23 150.78
3900 -2.06 151.40 -1.53 -102.11 -37.33 169.42 -0.28 148.13
4100 -1.43 151.78 -3.50 -120.64 -37.79 144.14 -0.40 146.26
4300 -1.01 150.24 -5.66 -135.37 -38.27 122.49 -0.53 145.38
4500 -0.76 148.06 -7.78 -147.04 -38.56 107.83 -0.64 144.44

Device S-parameters are available for download off of the website at: http://www.tqs.com

S11

8

1.0-1.0

.
0

6
.

0

1.0

0.4

0.6

0.8

6

.

0

-

8
.
0

-

Swp Max

6GHz

0

.

2

0

.

3

0
.

4

0

.

5

0

.

0

1

10.0

5.0

2.0

3.0

4.0

0

.

0

1

-

0

.

5

-

0
.

4

-

0

.

3

-

0

.

2

-

Swp Min

0.05GHz

4

.

0

2

.

0

0

0.2

2

.

0

-

4

.

0

-

S22

8

.

0

6
.

0

0.4

0.6

0.8

6
.
0

-

8
.

0

-

S(2,2)

1.0-1.0

AP562

0

.

2

1.0

5.0

2.0

3.0

4.0

0

.

2

-

Swp Max

0

.

3

4

0

0

.

3

-

Swp Min

0.05GHz

6GHz

0

.

0

.

5

0

.

0

1

10.0

0

.

0

1

-

0

.

5

-

.

4

-

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Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

3.4-3.6 GHz Application Circuit (AP562-PCB3500)

Typical O-FDMA Performance at 25°C

Frequency (GHz) 3.4 3.5 3.6 Units

Channel Power +30 +30 +30 dBm

Power Gain 11.5 11.5 11.3 dB

Input Return Loss 11 15 15 dB

Output Return Loss 5.6 6.7 5.9 dB

EVM 2.2 1.9 1.7 %

Operating Current, Icc 720 685 670 mA

Collector Efficiency 11.1 11.7 12.2 %

Output P1dB 39.5 39.4 38.7 dBm

Quiescent Current, Icq 400

Vpd +5

Vcc +12

C21

C1

L3

R3

R1

D1

C6
C7

C8

C22

L3

C12

C13

D2

C14
C15

R2

C10

C11

C24

C23

3.4-3.6 GHz Application Circuit Performance Plots

802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PA R @ 0.01% , 5 MHz Carrier BW

Gain vs. Frequency

12

11

10

9

Gain (dB)

8

7

3 3.2 3.4 3.6 3.8 4

Efficiency vs Output Average Power vs. Frequency

20

15

10

5

Collector Efficiency (%)

0

20 22 24 26 28 30 32

T=25°C

Frequency (GHz)

T=25°C

3.4 GHz 3.5 GHz 3.6 GHz

Output Power (dBm)

mA

V

V

C16
C17
C18

C25

C20

Notes:
The primary RF microstrip line is 50 Ω.
Components shown on the silkscreen but not on the schematic are not used.

1. The edge of C23 is placed at 43mil from AP562 RFout pin.

2. The edge of C24 is placed right next to C23.

3. The edge of C22 is placed at 95mil from AP562 RFin pin.

4. The edge of L3 is placed right next to C22.

Return Loss

0

-5

-10

-15

S11, S22 (dB)

-20

-25
3 3.2 3.4 3.6 3.8 4

EVM vs. Output Average Power vs. Frequency

5

4

3

2

EVM (%)

1

0

20 22 24 26 28 30 32

T=25°C

S11 S22

Frequency (GHz)

T=25°C

3.4 GHz 3.5 GHz 3.6 GHz

Output Power (dBm)

Current vs Output Average Power vs. Frequency

800
750
700
650
600
550
500

Collector Current (mA)

450
400

20 22 24 26 28 30 32

13

12

Gain (dB)

11

10

-50-30-101030507090

T=25°C

3.4 GHz 3.5 GHz 3.6 GHz

Output Power (dBm)

Powe r Gain vs T e mperatu re

Pout = 30 dBm

3.4 GHz 3.5 GHz 3.6 GHz

Temperature (°C )

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Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Current vs Output Average Power vs Temperature

800
750
700
650
600

Icc (mA)

550
500
450
400

20 22 24 26 28 30 32

f=3.5 GHz

+25ºC -40ºC +85ºC

Output Power (dBm)

Efficiency vs Output Average Power vs Temperature

25

20

15

10

Efficiency (%)

5

0

20 22 24 26 28 30 32

f=3.5 GHz

+25ºC -40ºC +85ºC

Output Power (dBm)

EVM vs. Ou tput A verag e P ow e r vs Te m p erature

5

4

3

2

EVM (%)

1

0

20 22 24 26 28 30 32

f=3.5 GHz

+25ºC -40ºC +85ºC

Output Power (dBm)

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Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

3.4 – 3.6 GHz Application Note: Changing Icq Biasing Configurations

The AP562 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Table 1) The
recommended circuit configurations shown previously in this datasheet have the device operating with a 400 mA as the
quiescent current (I
upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the
AP562 measured and configured for 3.5 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.

Table 1 : Reduced Current Operation

Icq

(mA)

400

350
300
250
200
150
100

R2
(Ω)

270

275
320
380
473
616
857

). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve

CQ

VPD

(V)

5

5
5
5
5
5
5

I

REF

(V)

2.92

2.88

2.83

2.8

2.73

2.66

2.6

EVM vs. Output Average Power vs. Icq

4

3

2

EVM (%)

1

100mA 150mA 200mA 250mA
300mA 350mA 400mA

0

28 29 30 31 32

f=3.5 GHz

Pout (dBm)

Efficiency vs. Output Average Power vs Icq

24

100mA 150mA 200mA 250mA
300mA 350mA 400mA

20

16

Efficiency (%)

12

8

28 29 30 31 32

f=3.5 GHz

Pout (dBm)

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Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Parameter Measurement Information

Switching Speed Test

Test Conditions:

Vcc = +12V at 25oC
Output Power = +30dBm @ 2.5 GHz
Rep Rate = 1 KHz, 50% duty cycle
Vpd amplitude = +5V
R2=200 ohms, C9=12pF
(C10, C11 removed for best switching
performance)
Xtal Detector Voltage =15mV (square law)

Test Result Waveforms:

Vpd = +5V

CW Signal Source

Vpd = +0V

Pulse Generator Oscilloscope

+ve

Vpd

AP56x Evaluation Brd

RF On

Cable Leng th = Lx

Cable Length = Lx

-ve

Cable Lengt h = Lx

Diode Detector

Attenuator

Vpd = +5V

RF Off

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Delay = 50nS

Vpd = +5V

Delay = 50nS

RF On

Specifications and information are subject to change without notice

AP562

3.3-3.8 GHz WiMAX 8W Power Amplifier

Mechanical Information

This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with

both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.

Drawing

Outline Drawing

Product Marking

The component will be laser marked with a
“AP562-F” product label with an alphanumeric
lot code on the top surface of the package.

Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.

Functional Pin Layout

Mounting Configuration / Land Pattern

Pin Function

1 VBIAS

2, 3, 7, 8, 12, 13 N/C

4, 5, 6 RF IN

9, 10, 11 RF Output / Vcc

14 IREF

Backside paddle GND

MSL / ESD Rating

ESD Rating: Class 1A
Value: Passes 250V to <500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114

ESD Rating: Class IV
Value: Passes 1000V to <2000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101

MSL Rating: Le vel 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020

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Specifications and information are subject to change without notice