Page 1
T
AP4501GM
Pb Free Plating Product
Advanced Power N AND P-CHANNEL ENHANCEMEN
Electronics Corp. MODE POWER MOSFET
▼
▼ Simple Drive Requirement
▼ ▼
▼
▼ Low On-resistance R
▼ ▼
▼
▼ Fast Switching I
▼ ▼
D1
D2
D1
SO-8
D2
G2
S2
G1
S1
Description I
N-CH BV
D
P-CH BV
R
D
DSS
DS(ON)
DSS
DS(ON)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
D1
effectiveness.
The SO-8 package is universally preferred for all commercial-
G1
G2
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
V
GS
=25℃ Continuous Drain Current
I
D@TA
=70℃ Continuous Drain Current
I
D@TA
I
DM
P
=25℃ Total Power Dissipation W
D@TA
Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Pulsed Drain Current
Linear Derating Factor W/℃
T
STG
T
J
Storage Temperature Range ℃
Operating Junction Temperature Range ℃
3
3
1
30
±20
7
5.8
20
-5.3 A
-4.7 A
-20 A
2
0.016
-55 to 150
-55 to 150
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D2
S2
Thermal Data
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
Parameter
3
Max. 62.5 ℃/W
201225022
Page 2
AP4501GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.02 -V/℃
D
Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 28 mΩ
=4.5V, ID=5A - - 42 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=7A - 13 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=30V, VGS=0V - - 1
VDS=24V, VGS=0V - - 25
Gate-Source Leakage VGS=±20V - Total Gate Charge
2
ID=7A - 8.4 Gate-Source Charge VDS=24V - 2.1 Gate-Drain ("Miller") Charge VGS=4.5V - 4.7 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=1A - 5.2 Turn-off Delay Time RG=3.3Ω,VGS=10V - 18.8 -
Fall Time RD=15Ω - 4.4 Input Capacitance VGS=0V - 645 Output Capacitance VDS=25V - 150 Reverse Transfer Capacitance f=1.0MHz - 95 -
±100
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
V
SD
Continuous Source Current ( Body Diode ) V
Forward On Voltage
2
=0V , VS=1.2V - - 1.7
D=VG
Tj=25℃, IS=7A, VGS=0V - - 1.2 V
A
Page 3
AP4501GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=-1mA - -0.03 -V/℃
D
Static Drain-Source On-Resistance2VGS=-10V, ID=-5.3A - - 50 mΩ
V
=-4.5V, ID=-4.2A - - 90 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
Forward Transconductance VDS=-10V, ID=-5.3A - 8.5 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage VGS=-Total Gate Charge
2
VDS=-30V, VGS=0V - - -1
VDS=-24V, VGS=0V - - -25
± 20V ±100± 20V ±100± 20V
ID=-5.3A - 20 Gate-Source Charge VDS=-15V - 3.5 Gate-Drain ("Miller") Charge VGS=-10V - 2 Turn-on Delay Time
2
VDS=-15V - 12 Rise Time ID=-1A - 20 Turn-off Delay Time RG=6Ω,VGS=-10V - 45 Fall Time RD=15Ω -27Input Capacitance VGS=0V - 790 Output Capacitance VDS=-15V - 440 Reverse Transfer Capacitance f=1.0MHz - 120 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
V
SD
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
3.Surface mounted on 1 in
Continuous Source Current ( Body Diode ) V
Forward On Voltage
2
300us , duty cycle <2%.
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
=0V , VS=-1.2V - - -1.7
D=VG
Tj=25℃, IS=-2.6A, VGS=0V - - -1.2 V
A
Page 4
AP4501GM
N-Channel
36
10V
8.0V
6.0V
5.0V
V
=4.5V
24
, Drain C ur r ent (A)
12
D
I
GS
TC=25oC
0
02356
VDS , Drain-to-Source Voltage (V)
36
10V
8.0V
6.0V
5.0V
24
, Drain C ur r ent (A)
12
D
I
VGS=4.5V
TC=150oC
0
02356
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
90
ID=7.0A
T
C
70
)
Ω
Ω
Ω
Ω
50
(m
DS(ON)
R
30
10
2 6 10 14
VGS (V)
=25
℃℃℃℃
2
ID=7.0A
=10V
V
GS
1.4
DS(ON)
0.8
Normalized R
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Page 5
N-Channel
S
D
AP4501GM
8
6
4
, Drain C ur r ent (A)
D
I
2
0
25 50 75 100 125 150
Tc , Case Temperature ( oC)
2.4
1.8
1.2
(W)
D
P
0.6
0
0 50 100 150
Tc ,Case Temperature (oC)
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
100
10
1
(A)
D
I
0.1
TC=25oC
ingle Pulse
0.01
0.1 1 10 100
1ms
10ms
100ms
1s
10s
C
1
Duty Factor = 0.5
)
thja
0.01
Normalized Thermal Response (R
0.001
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
t
Duty Factor = t/T
Peak T
= PDM x R
j
R
=135oC/W
thja
T
+ T
thja
a
VDS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Page 6
AP4501GM
f
N-Channel
12
10000
=1.0MHz
ID=7.0A
9
V
V
V
6
DS
=16V
=20V
DS
DS
=24V
1000
Ciss
C (pF)
Coss
Crss
, Gate to Source Voltage (V)
3
GS
V
0
0481216
QG , Total Gate Charge (nC)
100
10
1 7 13 19 25 31
VDS (V)
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
100
10
TC=150oC
1
(A)
S
I
0.1
0.01
0 0.4 0.8 1.2
T
=25oC
C
VSD (V)
3
2.5
2
(V)
1.5
GS(th)
V
1
0.5
0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
Page 7
AP4501GM
G
G
N-Channel
V
DS
R
D
90%
V
D
G
R
DS
TO THE
OSCILLOSCOPE
0.5 x RATED V
DS
10%
+
10V
-
S
V
GS
V
GS
t
d(on)tr
t
d(off)
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
V
G
V
DS
TO THE
D
G
S
V
+
-
1~ 3 mA
I
GS
I
D
OSCILLOSCOPE
0.8 x RATED V
DS
Q
GS
4.5V
Q
G
Q
GD
Charge
t
f
Q
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
Page 8
AP4501GM
P-Channel
20
10V
8.0V
6.0V
15
V
=4.0 V
GS
10
, Drain Current (A)
D
-I
5
TC=25oC
0
01234
-VDS , Drain-to-Source Voltage (V)
20
10V
8.0V
6.0V
15
V
=4.0 V
10
, Drain Current (A)
D
-I
5
GS
TC=150oC
0
01234
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
90
ID=-5.3A
=25
T
80
70
C
)
Ω
Ω
Ω
Ω
60
(m
DS(ON)
R
50
40
30
34567891011
-VGS (V)
℃℃℃℃
1.8
I
=-5.3A
D
VGS= -10V
1.6
1.4
DS(ON)
1.2
1
Normalized R
0.8
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Page 9
P-Channel
Sing
D
AP4501GM
6
5
4
3
, Drain Current (A)
2
D
-I
1
0
25 50 75 100 125 150
Tc , Case Temperature ( oC)
2.4
1.8
1.2
(W)
D
P
0.6
0
0 50 100 150
T
,Case Temperature ( oC)
c
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
100
10
1ms
1
(A)
D
-I
10ms
100ms
1s
0.1
10s
TC=25oC
C
1
Duty Factor = 0.5
)
thja
Normalized Thermal Response (R
0.01
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
Duty Factor = t/T
Peak Tj = PDM x R
R
=195oC/W
thja
T
+ T
thja
a
le Pulse
0.01
0.1 1 10 100
-VDS (V)
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Page 10
AP4501GM
f
I
P-Channel
14
=-5.3A
D
12
10000
=1.0MHz
10
V
V
8
V
6
4
, Gate to Source Voltage (V)
GS
-V
2
0
0 5 10 15 20 25 30
DS
=-10V
=-15V
DS
DS
=-20V
QG , Total Gate Charge (nC)
1000
C (pF)
100
10
1 5 9 1317212529
-VDS (V)
Ciss
Coss
Crss
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
100.00
10.00
Tj=25oCTj=150oC
1.00
(A)
S
-I
0.10
0.01
0.1 0.4 0.7 1 1.3
-VSD (V)
3
2.5
2
(V)
1.5
GS(th)
-V
1
0.5
0
-50 0 50 100 150
Tj,Junction Temperature ( oC)
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
Page 11
P-Channel
AP4501GM
V
DS
R
D
90%
V
D
G
R
G
DS
TO THE
OSCILLOSCOPE
0.5 x RATED V
DS
10%
-10 V
S
V
GS
V
GS
t
d(on)tr
t
d(off)
t
f
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
V
G
V
DS
TO THE
D
G
S
V
GS
OSCILLOSCOPE
0.5 x RATED V
-10V
DS
Q
GS
Q
G
Q
GD
-1~-3mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
Q
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