Datasheet AP4435GYT-HF Datasheet (Apec) [ru]

AP4435GYT-HF

D

DDD

Halogen-Free Product

Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement

D

▼ Small Size & Lower Profile R
▼ RoHS Compliant & Halogen-Free I

BV

DS(ON)

D

DSS

G

S

Description

Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK® 3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.

S

S

S

G

PMPAK

Absolute Maximum Ratings

Symbol Units

V

DS

V

GS

I

=25℃ A

D@TA

=70℃ A

I

D@TA

I

DM

P

T

T

=25℃ W

D@TA

STG

J

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

Parameter

3

3

1

Rating

-30

+

25

-11

-8.7

-40

3.57

-55 to 150

-55 to 150

-30V

21mΩ

-11A

®

3x3

V

V

A

℃

℃

Thermal Data

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 6 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Parameter

3

35 ℃/W

1

201009214

AP4435GYT-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BV

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

R

g

DSS

Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V

Static Drain-Source On-Resistance2VGS=-10V, ID=-10A - 17 21 mΩ

V

=-4.5V, ID=-6A - 26 36 mΩ

GS

Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.95 -3 V

Forward Transconductance VDS=-10V, ID=-6A - 15 - S

Drain-Source Leakage Current

V

=-30V, VGS=0V - - -10

DS

Gate-Source Leakage VGS=+20V, VDS=0V - - +100

Total Gate Charge

2

ID=-6A - 15 24

Gate-Source Charge VDS=-15V - 3 -

Gate-Drain ("Miller") Charge VGS=-4.5V - 8 -

Turn-on Delay Time

2

VDS=-15V - 12 -

Rise Time ID=-1A - 7.5 -

Turn-off Delay Time RG=3.3Ω,VGS=-10V - 39 -

Fall Time RD=15Ω -21-

Input Capacitance VGS=0V - 1260 2000

Output Capacitance VDS=-15V - 245 -

Reverse Transfer Capacitance f=1.0MHz - 210 -

uA

nA

nC

nC

nC

ns

ns

ns

ns

pF

pF

pF

Gate Resistance f=1.0MHz - 5.3 10.6 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

SD

t

rr

Q

rr

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2

2

IS=-2.9A, VGS=0V - - 1.2 V

IS=-6A, VGS=0V, - 19 - ns

2

A

P4435GYT-HF

g

f

I

I

50

=25oC

T

A

40

-10V

-7.0V

-5.0V

-4.5V

30

VG=-3.0V

20

, Drain Current (A)

D

-I

10

0

0123456

-VDS , Drain-to-Source Voltage (V)

50

TA=150oC

40

-10V

-7.0V

-5.0V

-4.5V

30

V

=-3.0V

G

20

, Drain Current (A)

D

-I

10

0

0123456

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

)

Ω

(m

DS(ON)

R

32

=-6A

D

T

=25

℃

A

28

24

20

DS(ON)

Normalized R

1.6

=-10A

D

V

=-10V

G

1.4

1.2

1.0

0.8

16

246810

-VGS , Gate-to-Source Voltage (V)

0.6

-50 0 50 100 150

Tj , Junction Temperature (oC)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

10

8

6

(A)

S

-I

4

2

0

0 0.2 0.4 0.6 0.8 1 1.2

Fi

Tj=25oCTj=150oC

-VSD , Source-to-Drain Voltage (V)

5. Forward Characteristic o

1.4

1.2

(V)

GS(th)

1.0

0.8

Normalized -V

0.6

0.4

-50 0 50 100 150

Tj , Junction Temperature (oC)

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3

AP4435GYT-HF

I

f

z

10

=-6A

D

=-15V

V

DS

8

6

4

, Gate to Source Voltage ( V)

2

GS

-V

0

0102030

QG , Total Gate Charge (nC)

1600

1200

C (pF)

800

400

0

1 5 9 1317212529

-VDS , Drain-to-Source Voltage (V)

=1.0MH

C

iss

C

oss

C

rss

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100

Operation in this area

limited by R

10

(A)

D

1

-I

0.1

DS(ON)

TA=25oC

Single Pulse

0.01

0.01 0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

100us

1ms

10ms

100ms

1s

DC

1

)

Duty factor=0.5

thja

0.2

0.1

0.1

0.05

0.02

0.01

Normalized Thermal Response (R

Single Pulse

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

P

DM

t

Duty factor = t/T

= PDM x R

Peak T

j

R

=85 ℃/W

thia

T

t , Pulse Width (s)

+ T

thja

a

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

V

90%

10%

V

GS

DS

t

d(on)tr

t

d(off)

t

f

V

-4.5V

G

Q

G

Q

GS

Q

GD

Charge

Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4