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AP4435GM-HF
A
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance R
D
D
D
D
▼ Fast Switching Characteristic I
G
▼ RoHS Compliant
SO-8
S
S
S
BV
DS(ON)
D
DSS
Description
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 2.5
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter
3
3
1
Rating
- 30
20
+
-9
-7.3
-50
0.02Linear Derating Factor
-55 to 150
-30V
20mΩ
-9A
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
50 ℃/W
1
200811216
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AP4435GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
Static Drain-Source On-Resistance2VGS=-10V, ID=-7A - - 20 mΩ
V
=-4.5V, ID=-5A - - 32 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
Forward Transconductance VDS=-10V, ID=-7A - 16 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
=-30V, VGS=0V - - -1
V
DS
VDS=-24V, VGS=0V - - -25
Gate-Source Leakage VGS=+20V - - +100
Total Gate Charge
2
ID=-7A - 18 29
Gate-Source Charge VDS=-24V - 3 -
Gate-Drain ("Miller") Charge VGS=-4.5V - 10 -
Turn-on Delay Time
2
VDS=-15V - 8 -
Rise Time ID=-1A - 6.6 -
Turn-off Delay Time RG=3.3Ω,VGS=-10V - 44 -
Fall Time RD=15Ω -34-
Input Capacitance VGS=0V - 1175 1690
Output Capacitance VDS=-25V - 195 -
Reverse Transfer Capacitance f=1.0MHz - 190 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 18 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
2
IS=-2.1A, VGS=0V - - -1.2 V
IS=-7A, VGS=0V, - 28 -
ns
nC
2
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P4435GM-HF
g
f
50
TA=25oC
40
-10V
-7.0V
-5.0V
-4.5V
30
20
, Drain Current (A)
D
-I
10
0
01234
V
= -3.0V
G
-VDS , Drain-to-Source Voltage (V)
50
TA=150oC
40
-10V
-7.0V
-5.0V
-4.5V
30
V
= -3.0V
G
20
, Drain Current (A)
D
-I
10
0
0246
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
DS(ON)
Normalized R
1.6
1.4
1.2
1.0
0.8
ID= -7A
V
= -10V
G
)
Ω
(m
DS(ON)
R
32
ID= -5A
T
28
24
20
16
=25oC
A
12
246810
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
8
6
(A)
S
-I
4
2
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3
Fi
T
j
=150oC
Tj=25oC
-VSD , Source-to-Drain Voltage (V)
5. Forward Characteristic o
2
1.8
1.6
(V)
1.4
GS(th)
-V
1.2
1
0.8
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
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AP4435GM-HF
f
z
12
10
10000
=1.0MH
ID= -7A
V
= -24V
8
6
DS
C
1000
iss
C (pF)
4
, Gate to Source Voltage ( V)
GS
-V
2
0
0 10203040
QG , Total Gate Charge (nC)
100
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100.00
10.00
1.00
(A)
D
-I
0.10
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
)
Duty factor=0.5
thja
0.2
0.1
0.1
0.05
0.02
0.01
Normalized Thermal Response (R
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
Duty factor = t/T
Peak T
R
= 125℃/W
thja
t
T
= PDM x R
j
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
40
V
= -5V
DS
30
Tj=150oCTj=25oC
V
G
Q
G
-4.5V
20
, Drain Current (A)
D
10
-I
0
0123456
-VGS , Gate-to-Source Voltage (V)
Q
GS
Q
GD
Charge
Q
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
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ADVANCED POWER ELECTRONICS CORP.
4435G
Package Outline : SO-8
D
5678
1
2
e
34
B
A
E1
Millimeters
SYMBOLS
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
E
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 － 0.90
α 0.00 4.00 8.00
MIN NOM MAX
1.27 TYP
0.254 TYP
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
M
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
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