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AP4435GM
Pb Free Plating Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼
▼ Simple Drive Requirement
▼ ▼
▼
▼ Low On-resistance R
▼ ▼
▼
▼ Fast Switching I
▼ ▼
D
D
D
SO-8
D
G
S
S
S
BV
DS(ON)
D
DSS
-30V
20mΩ
-8A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
=25℃ W
D@TA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 2.5
Linear Derating Factor
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter
3
3
1,2
Rating
- 30
± 20
-8
-6
-50
0.02
-55 to 150
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient Max. 50 ℃/W
Data and specifications subject to change without notice
Parameter
201124043
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AP4435GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=-1mA - -0.04 - V/℃
D
Static Drain-Source On-Resistance VGS=-10V, ID=-8A - 15 20 mΩ
V
=-4.5V, ID=-5A - 26 32 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
Forward Transconductance VDS=-15V, ID=-8A - 20 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=-30V, VGS=0V - - -1
VDS=-24V, VGS=0V - - -25
Gate-Source Leakage VGS=±20V - - ±100
Total Gate Charge
2
ID=-4.6A - 36 Gate-Source Charge VDS=-15V - 5.5 Gate-Drain ("Miller") Charge VGS=-10V - 3.5 Turn-on Delay Time
2
VDS=-15V - 12 Rise Time ID=-1A - 8 Turn-off Delay Time RG=6Ω,VGS=-10V - 75 Fall Time RD=15Ω -40Input Capacitance VGS=0V - 1530 Output Capacitance VDS=-15V - 900 Reverse Transfer Capacitance f=1.0MHz - 280 Gate Resistance f=1.0MHz - 6 9 Ω
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 83 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
3.Surface mounted on 1 in
300us , duty cycle <2%.
2
copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2
2
IS=-2.1A, VGS=0V - - -1.2 V
IS=-5A, VGS=0V, - 55 -
ns
nC
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AP4435GM
50
TA=25oC
40
-10V
-8.0V
-6.0V
30
=-4.0V
V
G
20
, Drain Current (A)
D
-I
10
0
0246810
-VDS , Drain-to-Source Voltage (V)
50
TA=150oC
40
-10V
-8.0V
-6.0V
30
=-4.0V
V
G
20
, Drain Current (A)
D
-I
10
0
0246810
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
Ω
Ω
Ω
(m
R
DS(ON)
50
ID=-8A
40
30
20
TA=25oC
DS(ON)
Normalized R
1.6
ID=-8A
1.4
=-10V
V
G
1.2
1.0
0.8
10
246810
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100.00
10.00
T
=150oC
(A)
S
-I
1.00
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3
j
Tj=25oC
-VSD , Source-to-Drain Voltage (V)
3
2
(V)
GS(th)
-V
1
0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
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AP4435GM
5
f
14
12
ID=-4.6A
V
=-15V
DS
10
8
6
, Gate to Source Voltage (V)
4
GS
-V
2
0
0 1020304050
QG , Total Gate Charge (nC)
10000
1000
C (pF)
100
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
=1.0MHz
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100.00
10.00
(A)
D
-I
1.00
TA=25oC
Single Pulse
0.10
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
1
)
thja
Normalized Thermal Response (R
Duty factor=0.
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
Duty factor = t/T
Peak Tj = PDM x R
R
= 125℃℃℃℃/W
thja
t
T
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
50
V
-10V
G
Q
G
Q
GS
Q
GD
Charge
Q
V
=-5V
DS
40
30
20
, Drain Current (A)
D
-I
10
0
02468
Tj=150oCTj=25oC
-VGS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
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