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AP40T03H/J
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge R
▼ Fast Switching I
G
D
BV
DS(ON)
D
DSS
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03J) are available for low-profile applications.
G
D
S
G
D
S
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TA
I
=100℃ A
D@TA
I
DM
P
=25℃ W
D@TA
Drain-Source Voltage 30
Gate-Source Voltage ±25
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation 31.25
Linear Derating Factor 0.25
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter Rating
@ 10V
GS
@ 10V
1
GS
28
24
95
-55 to 150
30V
25mΩ
28A
TO-252(H)
TO-251(J)
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
Parameter
200331055-1/4
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AP40T03H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.032 -V/℃
D
Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ
V
=4.5V, ID=14A - - 45 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=18A - 15 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
VDS=30V, VGS=0V - - 1
VDS=24V ,VGS=0V - - 25
Gate-Source Leakage VGS= ±25V - - ±100
Total Gate Charge
2
ID=18A - 8.8 Gate-Source Charge VDS=20V - 2.5 Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=18A - 62 Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 Fall Time RD=0.83Ω - 4.4 Input Capacitance VGS=0V - 655 Output Capacitance VDS=25V - 145 Reverse Transfer Capacitance f=1.0MHz - 95 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <
300us , duty cycle <2%.
1
=0V , VS=1.3V - - 28
D=VG
--95
Tj=25℃, IS=28A, VGS=0V - - 1.3 V
A
A
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AP40T03H/J
90
TC=25oC
60
30
, Drain Current (A)
D
I
0
0.0 1.0 2.0 3.0 4.0
V
VDS , Drain-to-Source Voltage (V)
10V
8.0V
6.0V
=4.0V
G
75
TC=150oC
50
, Drain Current (A)
25
D
I
0
0.0 1.0 2.0 3.0 4.0
V
VDS , Drain-to-Source Voltage (V)
10V
8.0V
6.0V
=4.0V
G
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
DS(ON)
R
70
ID=14A
T
=25
℃
C
50
30
DS(ON)
Normalized R
2.0
1.4
0.8
ID=18A
V
=10V
G
10
0 5 10 15
VGS , Gate-to-Source Voltage (V)
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
10
T
=150oC
j
(A)
S
I
1
0.1
0 0.4 0.8 1.2 1.6
Tj=25oC
VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
2.5
2.0
1.5
(V)
GS(th)
V
1.0
0.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Reverse Diode Junction Temperature
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AP40T03H/J
Sing
e
12
ID=18A
9
6
3
, Gate to Source Voltage ( V)
GS
V
0
036912
V
=10V
DS
V
=15V
DS
V
=20V
DS
QG , Total Gate Charge (nC)
1000
100
C (pF)
10
1 8 15 22 29
VDS ,Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
f=1.0MHz
100
1
Duty factor = 0.5
)
thjc
0.2
10
(A)
D
I
TC=25oC
le Puls
1
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
DC
0.1
0.1
0.05
P
0.02
0.01
Single Pulse
DM
t
Duty Factor = t/T
= PDM x R
Peak T
j
T
Normalized Thermal Response (R
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
+ T
thjc
C
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
90%
10%
V
GS
DS
t
d(on)
t
r
t
d(off)
t
f
V
4.5V
G
Q
G
GS
Q
GD
Charge
Q
Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
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