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AP40T03GS/P-HF
A
r
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge R
▼ Fast Switching Characteristic I
▼ RoHS Compliant & Halogen-Free
G
S
BV
DS(ON)
D
DSS
Description
P40T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited fo
high current application due to the low connection resistance. The
through-hole version (AP40T03GP) are available for low-profile
applications.
Absolute Maximum Ratings@T
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TC
I
=100℃ A
D@TC
I
DM
P
T
T
=25℃ W
D@TC
STG
J
Drain-Source Voltage 30
Gate-Source Voltage +
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation 31.25
Linear Derating Factor 0.25
Storage Temperature Range
Operating Junction Temperature Range
Parameter Rating
=25oC(unless otherwise specified)
j
@ 10V
GS
@ 10V
1
GS
G
D
S
-55 to 150
-55 to 150
G
28
24
95
25
D
S
30V
25mΩ
28A
TO-263(S)
TO-220(P)
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Parameter
3
1
201501055
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AP40T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.032 -V/℃
D
Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 25 mΩ
V
=4.5V, ID=14A - - 45 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=18A - 15 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC)
=30V, VGS=0V - - 1
V
DS
VDS=24V ,VGS=0V - - 250
Gate-Source Leakage VGS= +25V, VDS=0V - - +100
Total Gate Charge
2
ID=18A - 8.8 Gate-Source Charge VDS=20V - 2.5 Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=18A - 62 Turn-off Delay Time RG=3.3Ω -16Fall Time VGS=10V - 4.4 Input Capacitance VGS=0V - 655 Output Capacitance VDS=25V - 145 Reverse Transfer Capacitance f=1.0MHz - 95 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
1
=0V , VS=1.3V - - 28
D=VG
--95
Tj=25℃, IS=28A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
copper pad of FR4 board
A
A
2
Page 3
A
P40T03GS/P-H
F
90
TC=25oC
60
, Drain Current (A)
30
D
I
0
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
V
10V
8.0V
6.0V
=4.0V
G
75
TC=150oC
50
, Drain Current (A)
25
D
I
0
0.0 1.0 2.0 3.0 4.0
V
VDS , Drain-to-Source Voltage (V)
10V
8.0V
6.0V
=4.0V
G
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
DS(ON)
R
70
ID=14A
T
=25
℃
C
50
30
DS(ON)
Normalized R
2.0
1.4
0.8
ID=18A
V
=10V
G
10
0 5 10 15
VGS , Gate-to-Source Voltage (V)
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
10
T
=150oC
(A)
S
I
0.1
j
1
0 0.4 0.8 1.2 1.6
Tj=25oC
VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
2.5
2.0
(V)
1.5
GS(th)
V
1.0
0.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Reverse Diode Junction Temperature
3
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AP40T03GS/P-H
F
Sing
e
12
ID=18A
9
6
3
, Gate to Source Voltage ( V)
GS
V
0
036912
V
V
V
DS
DS
DS
=10V
=15V
=20V
QG , Total Gate Charge (nC)
1000
100
C (pF)
10
1 8 15 22 29
VDS ,Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
f=1.0MHz
1000
100
1
Duty factor = 0.5
)
thjc
0.2
(A)
D
10
I
1
TC=25oC
le Puls
0
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
DC
0.1
0.1
0.05
P
0.02
0.01
Single Pulse
DM
t
Duty Factor = t/T
Peak T
= PDM x R
j
T
Normalized Thermal Response (R
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
+ T
thjc
C
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
90%
10%
V
GS
DS
t
d(on)
t
r
t
d(off)
t
f
V
4.5V
G
Q
G
GS
Q
GD
Charge
Q
Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
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MARKING INFORMATION
r
r
TO-263
40T03GS
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
AP40T03GS/P-HF
Part Numbe
meet Rohs requirement
for low voltage MOSFET only
Package Code
TO-220
40T03GP
YWWSSS
Part Numbe
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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