Datasheet AP2607GY-HF-3 Datasheet (Apec) [ru]

Advanced Power

A

Electronics Corp.

P-channel Enhancement-mode Power MOSFET

AP2607GY-HF-3

Simple Drive Requirement

Low Gate Charge
Small Footprint, Low Profile R 52mΩ
RoHS-compliant, halogen-free

G

D

BV -20V

DSS

DS(ON)

I -5A

D

S

Description

S

dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.

The SOT-26 package is widely used for commercial and industrial
applications, where space is at a premium.

SOT-26 (Y)

D

D

D

D

Absolute Maximum Ratings

Symbol Units

V

DS

V

GS

I

at T =25°C -5 A

D A

I

at T =70°C -4 A

D A

I

DM

at TA=25°C

P Total Power Dissipation 2 W

D

T

STG

T

J

Drain-Source Voltage -20 V
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current

Linear Derating Factor 0.016
Storage Temperature Range

Operating Junction Temperature Range -55 to 150 °C

Parameter Rating

±8 V

3
3

1

-20 A

-55 to 150 °C

W/°C

G

Thermal Data

Symbol Value Unit

Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 °C/W

Parameter

Ordering Information

AP2607GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel)

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

201005142-3

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Electronics Corp.

Electrical Specifications

at T

=25°C (unless otherwise specified)

j

AP2607GY-HF-3

Symbol Parameter Test Conditions Min. Typ. Max. Units

BV

DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-5A - - 52 mΩ

V

=-2.5V, I =-4A - - 65 mΩ

GS D

V

=-1.8V, ID=-1A - - 90 mΩ

GS

Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 - -1 V
Forward Transconductance VDS=-5V, ID=-5A - 9 - S

Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=55oC)

VDS=-16V, VGS=0V - - -1

VDS=-16V ,VGS=0V - - -10 uA
Gate-Source Leakage VGS= ±8V - - ±100
Total Gate Charge

2

ID=-5A - 13 21
Gate-Source Charge VDS=-10V - 2.1 ­Gate-Drain ("Miller") Charge VGS=-4.5V - 5 ­Turn-on Delay Time

2

VDS=-10V - 10 - ns

uA

nA

nC

nC

nC

Rise Time ID=-1A - 18 - ns
Turn-off Delay Time RG=3.3Ω , VGS=-5V - 23 ­Fall Time RD=10Ω - 31 ­Input Capacitance VGS=0V - 1030 1650
Output Capacitance VDS=-20V - 120 ­Reverse Transfer Capacitance f=1.0MHz - 105 -

ns

ns

pF

pF

pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

SD

t

rr

Q

rr

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge dI/dt=100A/µs - 20 - nC

Notes:

1.Pulse width limited maximum junction temperature.

2.Pulse test - pulse width < 300µs , duty cycle < 2%

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 156 °C/W when mounted on minimum copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

2

2

IS=-1.2A, VGS=0V - - -1.2 V

IS=-5A, VGS=0V - 29 -

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Typical Electrical Characteristics

AP2607GY-HF-3

20

TA=25oC

16

-5.0V

-4.5V

-3.5V

-2.5V

= -2.0V

V

12

8

, Drain Current (A)

D

-I

4

0

01234

G

-VDS , Drain-to-Source Voltage (V)

20

TA=150oC

16

-5.0V

-4.5V

-3.5V

-2.5V

12

8

, Drain Current (A)

D

-I

4

0

01234567

VG= -2.0V

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70

ID=-4A

ID=-4.2A

T

=25oC

A

T

=25oC

60

A

(mΩ)

50

DS(ON)

R

40

DS(ON)

Normalized R

1.8

ID= -5A

= -4.5V

V

GS

1.6

1.4

1.2

1

0.8

30

012345

-VGS , Gate-to-Source Voltage (V)

0.6

-50 0 50 100 150

Tj , Junction Temperature (oC)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature

5

4

3

(A)

S

-I

2

1

0

0 0.2 0.4 0.6 0.8 1 1.2

Tj=25oCTj=150oC

-VSD , Source-to-Drain Voltage (V)

1.5

(V)

1

GS(th)

0.5

Normalized -V

0

-50 0 50 100 150

Tj, Junction Temperature ( oC)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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www.a-powerusa.com

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z

Electronics Corp.

Typical Electrical Characteristics (cont.)

AP2607GY-HF-3

8

ID= -5A

6

V

= -10V

4

, Gate to Source Voltage ( V)

2

GS

-V

0

0 5 10 15 20 25

DS

QG , Total Gate Charge (nC)

1200

1000

800

600

C (pF)

400

200

0

1 5 9 13 17 21 25

-VDS , Drain-to-Source Voltage (V)

=1.0MH

C

iss

C

oss

C

rss

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100

10

Operation in this area

limited by R

DS(ON)

(A)

D

1

-I

0.1

TA=25oC

Single Pulse

0.01

0.01 0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

100us

1ms

10ms

100ms

1s

DC

1

Duty factor=0.5

)

thja

0.1

0.01

0.02

0.01

0.2

0.1

0.05

Single Pulse

P

DM

Duty factor = t/T
Peak T
R

thja

t

= PDM x R

j

= 156°C/W

T

Normalized Thermal Response (R

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

+ T

thja

a

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

V

V

DS

G

90%

Q

G

-4.5V
Q

GS

Q

GD

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Charge

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

Q

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L

Electronics Corp.

Package Dimensions: SOT-26

G

C

A

D

AP2607GY-HF-3

Millimeters

SYMBOLS

A 2.70 2.90 3.10

B 2.60 2.80 3.00
C 1.40 1.60 1.80

B

D 0.30 0.43 0.55

E 0.00 0.05 0.10
H 1.20REF
G

I
J

L

MIN NOM MAX

1.90REF

0.12REF

0.37REF

0.95REF

J

Marking Information:

Laser Marking

H

E

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

I

Product: YG = AP2607GY-3

YGXX

XX = Date/lot code

For details of how to convert this
to standard YYWW date code format,

please contact us directly.

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

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