Datasheet AP2307GN-HF-3 Datasheet (Apec) [ru]

Advanced Power

A

Electronics Corp.

P-channel Enhancement-mode Power MOSFET

AP2307GN-HF-3

Simple Drive Requirement
Low On-resistance

Surface Mount Device R 60mΩ

G

RoHS-compliant, halogen-free I -4A

D

BV -16V

DSS

DS(ON)

S

D

Description

dvanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, low on-resistance and cost-effectiveness.
The AP2307GN-HF-3 is in the popular SOT-23 small surface-mount package

which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches and DC-DC converters.

SOT-23

D

G

Absolute Maximum Ratings

Symbol Units

V

DS

V

GS

at T =25°C -4 A

I Continuous Drain Current

D A

I

at T = 70°C -3.3 A

D A

I

DM

at TA=25°C

P Total Power Dissipation 1.38 W

D

T

STG

T Operating Junction Temperature Range -55 to 1

J

Drain-Source Voltage -16 V
Gate-Source Voltage

Continuous Drain Current
Pulsed Drain Current

Storage Temperature Range

Parameter Rating

±8 V

3

3

1

-12 A

-55 to 150 °C

50 °C

S

Thermal Data

Symbol Value Unit

Rthj-a Maximum Thermal Resistance, Junction-ambient

Parameter

90 °C/W

Ordering Information

AP2307GN-HF-3TR : RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel

©2011 Advanced Power Electronics Corp. USA 201003154-3

www.a-powerusa.com

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Electrical Specifications

at T

=25°C (unless otherwise specified)

j

AP2307GN-HF-3

Symbol Parameter Test Conditions

BV

DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -16 - - V

V

=-4.5V, ID=-4A - - 60 mΩ

GS

Static Drain-Source On-Resistance

2

V

=-2.5V, ID=-3.0A - - 70 mΩ

GS

V

=-1.8V, ID=-2.0A - - 90 mΩ

GS

Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1.0 V
Forward Transconductance VDS=-5V, ID=-4A - 12 - S
Drain-Source Leakage Current

Drain-Source Leakage Current (Tj=70oC)

V

=-16V, VGS=0V - - -1

DS

VDS=-12V, VGS=0V - - -25
Gate-Source Leakage VGS= ±8V, VDS=0V - - ±100
Total Gate Charge

2

ID=-4A - 15 24
Gate-Source Charge VDS=-12V - 1.3 ­Gate-Drain ("Miller") Charge VGS=-4.5V - 4 ­Turn-on Delay Time

2

VDS=-10V - 8 ­Rise Time ID=-1A - 11 ­Turn-off Delay Time RG=3.3Ω,VGS=-10V - 54 -

Fall Time RD=10Ω -36­Input Capacitance VGS=0V - 985 1580
Output Capacitance VDS=-15V - 180 ­Reverse Transfer Capacitance f=1.0MHz - 160 -

Min. Typ. Max. Units

uA
uA
nA
nC
nC
nC

ns
ns

ns

ns
pF
pF
pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

SD

t

rr

Q

rr

Forward On Voltage

Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 26 -

Notes:

1. Pulse width limited by maximum junction temperature.

2. Pulse test - pulse width < 300µs , duty cycle < 2%

2

3. Surface mounted on 1in

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.

2

2

IS=-1.2A, VGS=0V - - -1.2 V
IS=-4A, VGS=0V, - 39 -

ns
nC

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Typical Electrical Characteristics

AP2307GN-HF-3

16

TA=25oC

14

12

10

8

6

, Drain Current (A)

D

-I

4

2

0

02

-VDS , Drain-to-Source Voltage (V)

-5.0V

-4.5V

-3.0V

-2.5V

VG= -1.8V

468

14

TA=150oC

12

10

8

6

, Drain Current (A)

D

4

-I

2

0

024

-VDS , Drain-to-Source Voltage (V)

-5.0V

-4.5V

-3.0V

-2.5V

V

= -1.8 V

G

68

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70

ID=-3A

TA=25oC

60

)

Ω

(m

DS(ON)

R

50

DS(ON)

Normalized R

1.6

1.4

1.2

1.0

0.8

ID= -4 A

V

= -4.5V

G

40

13

-VGS , Gate-to-Source Voltage (V)

579

0.6

-50 0 50 100 150

Tj , Junction Temperature (oC)

Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance

Gate Voltage

3

2

(A)

S

-I

1

0

0 0.2 0.4 0.6 0.8 1

-VSD , Source-to-Drain Voltage (V)

Tj=25oCTj=150oC

vs. Junction Temperature

2.0

1.5

(V)

GS(th)

1.0

Normalized -V

0.5

0.0

-50 0 50 100 150

Tj , Junction Temperature (oC)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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DC

f

z

Electronics Corp.

Typical Electrical Characteristics (cont.)

AP2307GN-HF-3

8

10000

=1.0MH

ID=-4A

V

=-12V

DS

6

4

, Gate to Source Voltage ( V)

GS

2

-V

0

0 8 16 24 32

QG , Total Gate Charge (nC)

1000

C (pF)

100

1 5 9 13 17

-VDS , Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100.00

10.00

Operation in this

area limited by

R

DS(ON)

(A)

1.00

D

-I

0.10

TA=25oC

Single Pulse

0.01

0.01 0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

100us

1ms

10ms

100ms

1s

1

)

thja

0.1

0.01

Duty factor=0.5

0.2

0.1

0.05

0.01

Single Pulse

P

DM

Duty factor = t/T
Peak T
R

= 270270°C/W

thja

t

T

= PDM x R

j

Normalized Thermal Response (R

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

+ T

thja

a

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)tf

V

-4.5V

G

Q

G

Q

GS

Q

GD

Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

©2011 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Q

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Package Dimensions: SOT-23

AP2307GN-HF-3

D1

D

SYMBOLS

A 0.88 -- 1.30

A1 0.00 -- 0.10

E1

E

A2 0.08 -- 0.25
D1 0.30 0.40 0.50

Millimeters

MIN NOM MAX

e 1.70 2.00 2.30

D 2.70 2.90 3.10
E 2.20 2.60 3.00

e

A2

A

A1

L

M

M

E1 1.20 1.50 1.80

M 0° -- 10°

L 0.30 -- 0.60

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

Marking Information:

N9XX

©2011 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Product: N9 = AP2307GN-HF-3

Date/lot code

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