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AP134-501
Datasheet (ALPHA)
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Datasheet AP134-501 Datasheet (ALPHA)

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Page 1
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
Features
■ 3.2 V Nominal Operating Voltage
■ 50 Ω Internally Matched Input and Output
■ High Power Added Efficiency: 55% for
GSM and 50% for DCS and PCS
■ Low Current Standby Mode: < 10 µA
■ Integral Band Select and Analog Power
Control
■ GPRS Class 12 Capable
-501
AP134-501
0.394 (10.0 mm)
± 0.004 (0.1 mm)
0.315 (8.0 mm)
± 0.004 (0.1 mm)
SIDE VIEW
TOP VIEW BOTTOM VIEW
PIN 1
INDICATOR
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.082 (2.09 mm)
± 0.002 (0.051 mm)
0.046 (1.18 mm)
± 0.002 (0.051 mm)
0.06 (1.56 mm)
± 0.004 (0.10 mm)
0.04 (1.05 mm)
± 0.002 (0.05 mm)
0.075 (1.91 mm) BSC
0.075
(1.91 mm)
BSC
MOLD CAP
16
1
Description
The AP134-501 is a high performance IC power amplifier module designed for use as the final amplification stage in tri-band GSM and GPRS mobile phone applications (880–915, 1710–1785 and 1850–1910 MHz). It features 3-cell battery operation, a band select switch, a single positive analog power control input for both bands, and exceptional power added efficiency. The amplifier is manufactured on an advanced InGaP HBT process, known industry-wide for its excellent reliability and performance. The amplifier module is completely self­contained, requiring no external matching components.
Preliminary
Parameter Condition Min. Typ. Max. Unit
Supply Voltage 2.8 3.2 4.2 V
Leakage Current No RF Input Power 10 µA
Band Select Voltage GSM 0 0.5 V
DCS/PCS 2.0 2.8 V
Band Select Current 1.0 mA
Power Control Voltage 0.1 1.9 V
Power Control Current 1.0 mA
DC Specifications
Characteristic Value
Supply Voltage VCC, Standby 6 V Mode, V
APC
< 0.3, No RF Input Power
Power Control Voltage 4 V
Band Select Voltage 4 V
Input Power (CW) 15 dBm
Operating Case Temperature -35 to +85°C
Storage Temperature -45 to 120°C
Absolute Maximum Ratings
Page 2
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module AP134-501
Parameter Condition Min. Typ. Max. Unit
Frequency 880 915 MHz
Output Power 34 35 dBm
VCC= 2.8 V, T = -20 to +70°C 32.5 dBm
Dynamic Range V
APC
= 0.1–1.9 V 60 dB
Power Control Slope V
APC
= 0.1–1.9 V 75 150 dB/V
APC
Power Added Efficiency P
OUT
= 34 dBm 50 55 %
Input Power 3 6 10 dBm
Input VSWR P
OUT
= 5–35 dBm 2:1
Forward Isolation PIN= -5 dBm, V
APC
= 0.1 V -40 dBm
PIN= 10 dBm, V
APC
= 0.1 V -25 dBm
Harmonics 2 F0…7 F
0
-10 dBm
Noise in the RXBand 925 MHz, 100 KHz BW -72 dBm
935 MHz, 100 KHz BW -84 dBm
1805–1880 MHz, 100 KHz BW -76 dBm
1930–1990 MHz, 100 KHz BW -76 dBm
Ruggedness Output VSWR = 10:1 No Module Damage
All Phase Angles, VCC= 4.2 V, or Permanent PIN= 10 dBm, V
APC
= 1.9 V Performance Degradation
Stability Output VSWR = 10:1 -36 dBm
All Phase Angles, VCC= 4.2 V, PIN= 10 dBm, V
APC
= 1.9 V
Band to Band Isolation 2 F0Measured at DCS Output -20 dBm
3 F0Measured at DCS Output -20 dBm
Electrical Specifications
GSM Mode
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC= 3.2 V, PIN= 6 dBm and temperature = 25°C
Parameter Condition Min. Typ. Max. Unit
Frequency DCS 1710 1785 MHz
PCS 1850 1910 MHz
Output Power 31.9 32.5 dBm
VCC= 2.8 V, T = -20 to +70°C 29.5 dBm
Dynamic Range V
APC
= 0.1–1.9 V 60 dB
Power Control Slope V
APC
= 0.1–1.9 V 75 150 dB/V
APC
Power Added Efficiency P
OUT
= 31.9 dBm 42 50 %
Input Power 3 6 10 dBm
Input VSWR P
OUT
= 0–32 dBm 2:1
Forward Isolation PIN= -5 dBm, V
APC
= 0.1 V -48 dBm
PIN= 10 dBm, V
APC
= 0.1 V -20 dBm
Harmonics 2 F0…7 F
0
-10 dBm
Noise in the RXBand 1805–1880 MHz, 100 KHz BW -76 dBm
Ruggedness Output VSWR = 10:1 No Module Damage
All Phase Angles, VCC= 4.2 V, or Permanent PIN=10 dBm, V
APC
= 1.9 V Performance Degradation
Stability Output VSWR = 10:1 -36 dBm
All Phase Angles, VCC= 4.2 V,
PIN= 10 dBm, V
APC
= 1.9 V
DCS/PCS Mode
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC= 3.2 V, PIN= 6 dBm and temperature = 25°C
Page 3
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 3
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module AP134-501
P
OUT
(dBm) and Gain (dB)
Power Added Efficiency (%)
V
APC
(V)
VCC = 3.2 V, Frequency = 900 MHz,
P
IN
= 6 dBm
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
Gain
PAE
P
OUT
(dBm) and Gain (dB)
Power Added Efficiency (%)
V
APC
(V)
VCC = 3.2 V, Frequency = 1750 MHz,
P
IN
= 6 dBm
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
Gain
PAE
P
OUT
(dBm) and Gain (dB)
Power Added Efficiency (%)
V
APC
(V)
VCC = 3.2 V, Frequency = 1910 MHz,
P
IN
= 6 dBm
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
Gain
PAE
P
OUT
(dBm) and Gain (dB)
Power Added Efficiency (%)
V
APC
(V)
VCC = 2.8 V, Frequency = 900 MHz,
P
IN
= 6 dBm
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
880 MHz
P
OUT
900 MHz
P
OUT
915 MHz
PAE
880 MHz
PAE
900 MHz
PAE
915 MHz
P
OUT
(dBm)
Power Added Efficiency (%)
V
APC
(V)
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
and PAE vs. V
APC
and
Frequency, V
CC
= 3.2 V, PIN = 6 dBm
P
OUT
880 MHz
P
OUT
900 MHz
P
OUT
915 MHz
PAE
880 MHz
PAE
900 MHz
PAE
915 MHz
P
OUT
(dBm)
Power Added Efficiency (%)
V
APC
(V)
P
OUT
and PAE vs. V
APC
and Frequency, V
CC
= 4.2 V, PIN = 6 dBm
-40
-30
-20
-10
0
10
20
30
40
-10
0
10
20
30
40
50
60
70
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
P
OUT
880 MHz
P
OUT
900 MHz
P
OUT
915 MHz
PAE
880 MHz
PAE
900 MHz
PAE 915 MHz
Typical Performance Data
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5–7% in PAE.
Page 4
4 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module AP134-501
P
OUT
(dBm)
Power Added Efficiency (%)
V
APC
(V)
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
-10
0
10
20
30
40
50
60
70
P
OUT
and PAE vs. VCC and V
APC
P
IN
= 6 dBm
P
OUT
@
VCC = 2.8
P
OUT
@ VCC = 3.2
P
OUT
@ VCC = 4.2
PAE @ VCC = 2.8
PAE @
VCC = 3.2
PAE @
VCC = 4.2
0.20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
P
OUT
(dBm)
Power Added Efficiency (%)
Control Voltage – V
APC
(V)
-30
-20
-10
0
10
20
30
40
-10
0
10
20
30
40
50
60
P
OUT
and PAE vs. Temperature
V
CC
= 3.2 V, PIN = 6 dBm,
Frequency = 880 MHz
P
OUT
-25˚C
P
OUT
25˚C
P
OUT
75˚C
PAE -25˚C
PAE 25˚C
PAE 75˚C
0.20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
P
OUT
(dBm)
Power Added Efficiency (%)
Control Voltage – V
APC
(V)
-30
-20
-10
0
10
20
30
40
-10
0
10
20
30
40
50
60
P
OUT
and PAE vs. Temperature
V
CC
= 3.2 V, PIN = 6 dBm,
Frequency = 1710 MHz
P
OUT
-25˚C
P
OUT
25˚C
P
OUT
75˚C
PAE -25˚C
PAE 25˚C
PAE 75˚C
0.20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
P
OUT
(dBm)
Power Added Efficiency (%)
Control Voltage – V
APC
(V)
-30
-20
-10
0
10
20
30
40
-10
0
10
20
30
40
50
60
P
OUT
and PAE vs. Temperature
V
CC
= 3.2 V, PIN = 6 dBm,
Frequency = 1850 MHz
P
OUT
-25˚C
P
OUT
25˚C
P
OUT
75˚C
PAE -25˚C
PAE 25˚C
PAE 75˚C
P
OUT
(dBm)
Power Added Efficiency (%)
Duty Cycle (%)
Duty Cycle Effects on Module Performance
V
CC
= 3.2 V, Frequency = 900 MHz,
P
IN
= 6 dBm
34.0
34.2
34.4
34.6
34.8
35.0
35.2
35.4
35.6
35.8
36.0
0 20406080100
50
51
52
53
54
55
56
57
58
59
60
P
OUT
PAE
P
OUT
, F
0
2 F
0
and 3 F
0
(dBm)
-50
-40
-30
-20
-10
0
10
20
30
40
0 0.5 1.0 1.5 2.0
Harmonic Performance VCC = 3.2 V,
Frequency = 900 MHz, P
IN
= 6 dBm
V
APC
(V)
F0 (dBm)
2 F
0
(dBm)
3 F
0
(dBm)
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5–7% in PAE.
Page 5
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 5
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module AP134-501
1
2
3
4
5
13
12
11
10
9678
16 15 14
CMOS ASIC
V
APC
GND
V
CC
V
CC
V
BS
GND
DCS/PCS In
GSM In
V
cc
V
CC
GND
GND
GND
GND
DCS/PCS Out
GSM Out
Pin Out
1 16
2
3
4
5 6
13
9
11
V
CC
DCS/
PCS In
GSM
In
GSM
Out
V
APC
V
CC
V
CC
DCS/
PCS Out
V
CC
V
BS
50 Ω Microstrip50 Ω Microstrip
50 Ω Microstrip
50 Ω Microstrip
Application Schematic
Pin Out Description
Pin Symbol Description
1 DCS/ RF input to DCS/PCS power amplifier.
PCS_In
2V
APC
Analog power control input voltage. 10 nF RF bypassing capacitor recommended.
3VCCPower supply input voltage. A 10 µF
RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board.
4VBSBand select input voltage.
5 GSM_In RF input to GSM power amplifier.
6 VCC Power supply input voltage. 10 µF
RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board.
7 GND Ground connection.
8 GND Ground connection.
9 GSM_Out RF output for GSM amplifier.
10 GND Ground connection.
11 V
CC
Power supply input voltage. 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board.
12 GND Ground connection.
13 DCS/ RF output for DCS/PCS power
PCS_Out amplifier.
14 GND Ground connection.
15 GND Ground connection.
16 V
CC
Power supply input voltage. 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board.
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