Datasheet AON6912ALS Datasheet (Alpha & Omega) [ru]

AON6912A

30V Dual Asymmetric N-Channel MOSFET

Q1

Q2

Absolute Maximum Ratings T

=25°C unless otherwise noted

Symbol

A D

C

C

C

Parameter

Units

Max Q1

Max Q2

General Description Product Summary

The AON6912A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R

to reduce conduction losses. The AON6912A is

DS(ON)

well suited for use in compact DC/DC converter
applications.

DFN5X6

DFN5X6

Top View Bottom View

Top View Bottom View

V

DS

ID (at VGS=10V) 34A 52A
R
R

(at VGS=10V) <13.7mΩ <7.3mΩ

DS(ON)

(at VGS = 4.5V) <19.3mΩ <10.4mΩ

DS(ON)

100% UIS Tested
100% Rg Tested

30V 30V

PIN1

PIN1

A

Drain-Source Voltage 30
Gate-Source Voltage

Continuous Drain
Current

TC=25°C
TC=100°C

Pulsed Drain Current
Continuous Drain

Current

TA=25°C

TA=70°C
Avalanche Current
Avalanche Energy L=0.1mH

TC=25°C

B

Power Dissipation

TC=100°C

TA=25°C

A

Power Dissipation

TA=70°C
Junction and Storage Temperature Range °C

V

DS

V

GS

I

D

I

DM

I

DSM

IAS, I
EAS, E

P

D

P

DSM

TJ, T

AR

STG

Top View

Top View

±20
34
21
85
10

8 10.8

22

AR

24 80
22

9

1.9 2.1

1.2 1.3

-55 to 150

52

33

130

13.8

28

30
12

Bottom View

Bottom View

mJ

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2

A

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

t ≤ 10s
Steady-State
Steady-State

R

θJA

R

θJC

29 24 35 29
56 50 67 60

4.5 3.5 5.5 4.2

Units

°C/W
°C/W
°C/W

V
V

A

A
A

W

W

www.aosmd.com Page 1 of 10

tr9

ns

Turn-On Rise Time

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

AON6912A

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A

1.5 1.9 2.5 V
85 A

9.8 13.7

100 nA

TJ=125°C 14.5 21.5
VGS=4.5V, ID=10A
VDS=5V, ID=10A
IS=1A,VGS=0V

12.9 19.3 mΩ
45 S

0.75 1 V

µA

mΩ

25 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

610 760 910 pF

88 125 160 pF
40 70 100 pF

0.8 1.6 2.4 Ω

SWITCHING PARAMETERS

Qg(10V) 11 14 17.0 nC
Qg(4.5V) 5 6.6 8.0 nC
Q

gs

Q

gd

t

D(on)

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

VGS=10V, VDS=15V, ID=10A

2.4 nC
3 nC

4.4 ns

VGS=10V, VDS=15V, RL=1.5Ω,
R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

GEN

=3Ω

17 ns

6 ns

IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

5.6

6.4

7 8.4 ns
8 9.6

nC

Rev1: Mar. 2011 www.aosmd.com Page 2 of 10

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4.5V

6V

25°C

4.5V

6V

AON6912A

60

60

10V

10V

50

50

4V

4V

30

30

VDS=5V

VDS=5V

25

25

40

40

(A)

(A)

30

30

D

D

I

I

20

20

10

10

0

0

0 1 2 3 4 5

0 1 2 3 4 5

VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

18

18

16

16

14

14

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

12

12

DS(ON)

DS(ON)

R

R

10

10

8

8

6

6

0 5 10 15 20 25 30

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

30

25

20

Ω

Ω)

Ω

Ω

(m

15

DS(ON)

R

10

5

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VDS(Volts)

VGS=4.5V

VGS=4.5V

VGS=10V

VGS=10V

Voltage (Note E)

Voltage (Note E)

VGS(Volts)

(Note E)

ID(A)

ID(A)

3.5V

3.5V

VGS=3V

VGS=3V

ID=10A

125°C

20

20

15

15

(A)

(A)

D

D

I

I

10

10

5

5

0

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.8

1.8

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

1.0E+02

1.0E+01

1.0E+00

40

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

125°C

125°C

125°C

VGS(Volts)

VGS(Volts)

VGS=10V

VGS=10V
ID=10A

ID=10A

Temperature (°C)

Temperature (°C)

(Note E)

(Note E)

25°C

VSD(Volts)

25°C

25°C

VGS=4.5V

VGS=4.5V
ID=10A

ID=10A

17

5
2

10

0

18

Rev1: Mar. 2011 www.aosmd.com Page 3 of 10

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10µs

Case (Note F)

10µs

on

P

10

10

VDS=15V

VDS=15V
ID=10A

ID=10A

8

8

6

6

(Volts)

(Volts)

GS

GS

4

4

V

V

2

2

0

0

0 2 4 6 8 10

0 2 4 6 8 10

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

1000.0

1000.0

100.0

100.0

R

R

DS(ON)

DS(ON)

limited

limited

10.0

10.0

(Amps)

(Amps)

1.0

1.0

D

D

I

I

0.1

0.1

Qg(nC)

Qg(nC)

T

=150°C

T

=150°C

J(Max)

J(Max)

TC=25°C

TC=25°C

DC

DC

100us

100us

1ms

1ms

1200

1200

1000

1000

C

C

iss

800

800

600

600

400

400

Capacitance (pF)

Capacitance (pF)

200

200

C

C

rss

rss

0

0

0 5 10 15 20 25 30

0 5 10 15 20 25 30

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

200

200

160

160

120

120

80

80

Power (W)

Power (W)

40

40

iss

C

C

oss

oss

VDS(Volts)

VDS(Volts)

T

T

J(Max)

J(Max)

TC=25°C

TC=25°C

=150°C

=150°C

AON6912A

0.0

0.0

0.01 0.1 1 10 100

0.01 0.1 1 10 100

Figure 9: Maximum Forward Biased

Figure 9: Maximum Forward Biased

VDS(Volts)

VDS(Volts)

Safe Operating Area (Note F)

10

1

D=Ton/T
T

J,PK=TC+PDM.ZθJC.RθJC

R

=5.5°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0

0.0001 0.001 0.01 0.1 1 10

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Figure 10: Single Pulse Power Rating Junction-to-

Pulse Width (s)

Case (Note F)

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJC

θ

θ

Z

Single Pulse

T

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Pulse Width (s)

Rev1: Mar. 2011 www.aosmd.com Page 4 of 10

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

100

TA=25°C

TA=25°C

TA=100°C

TA=100°C

TA=150°C

TA=150°C

TA=125°C

TA=125°C

(A) Peak Avalanche Current

(A) Peak Avalanche Current

AR

AR

I

I

10

10

0.000001 0.00001 0.0001 0.001

0.000001 0.00001 0.0001 0.001

Time in avalanche, tA(s)

Figure 12: Single Pulse Avalanche capability (Note

Figure 12: Single Pulse Avalanche capability (Note

40

40
35

35
30

30

(A)

(A)

D

D

25

25
20

20
15

15

Current rating I

Current rating I

10

10

5

5
0

0

0 25 50 75 100 125 150

0 25 50 75 100 125 150

Time in avalanche, tA(s)

C)

C)

T

(°°°°C)

T

(°°°°C)

CASE

Figure 14: Current De-rating (Note F)

Figure 14: Current De-rating (Note F)

CASE

25

25

20

20

15

15

10

10

Power Dissipation (W)

Power Dissipation (W)

5

5

0

0

0 25 50 75 100 125 150

0 25 50 75 100 125 150

T

(°°°°C)

T

(°°°°C)

CASE

CASE

TA=25°C

TA=25°C

10000

10000

1000

1000

Figure 13: Power De-rating (Note F)

Figure 13: Power De-rating (Note F)

17

100

100

Power (W)

Power (W)

10

10

1

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Figure 15: Single Pulse Power Rating Junction-to-

Figure 15: Single Pulse Power Rating Junction-to-

Pulse Width (s)

Pulse Width (s)

Ambient (Note H)

10

18

AON6912A

5
2

0

10

1

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=67°C/W

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Pulse Width (s)

Rev1: Mar. 2011 www.aosmd.com Page 5 of 10

tr2

ns

Turn-On Rise Time

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

AON6912A

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A

1.3 1.9 2.5 V

130 A

6.1 7.3

100 nA

TJ=125°C 8.5 10.2
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V

8.3 10.4 mΩ
60 S

0.7 1 V

µA

mΩ

35 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

870 1090 1300 pF
340 490 640 pF

22 38 53 pF

0.4 0.9 1.4 Ω

SWITCHING PARAMETERS

Qg(10V) 12 16 20 nC
Qg(4.5V) 5 7 9 nC
Q

gs

Q

gd

t

D(on)

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

VGS=10V, VDS=15V, ID=20A

2 2.5 3 nC

1.5 2.5 3.5 nC
5 ns

VGS=10V, VDS=15V, RL=0.75Ω,
R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

GEN

=3Ω

16 ns

2 ns

IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

10
20

13 16 ns
25 30

nC

Rev1: Mar. 2011 www.aosmd.com Page 6 of 10

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

100

100

10V

10V

4.5V

4.5V

80

80

60

60

(A)

(A)

D

D

I

I

40

40

20

20

0

0

0 1 2 3 4 5

0 1 2 3 4 5

VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

15

15

12

12

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

9

9

(m

(m

6

6

DS(ON)

DS(ON)

R

R

3

3

0

0

0 5 10 15 20 25 30

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

Voltage (Note E)

Voltage (Note E)

VGS=4.5V

VGS=4.5V

ID(A)

ID(A)

4V

4V

VGS=10V

VGS=10V

3.5V

3.5V

VGS=3V

VGS=3V

50

50

VDS=5V

VDS=5V

40

40

30

30

(A)

(A)

D

D

I

I

20

20

10

10

0

0

1 1.5 2 2.5 3 3.5 4

1 1.5 2 2.5 3 3.5 4

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

125°C

125°C

25°C

25°C

VGS(Volts)

VGS(Volts)

VGS=10V

VGS=10V
ID=20A

ID=20A

VGS=4.5V

VGS=4.5V
ID=20A

ID=20A

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

(Note E)

(Note E)

AON6912A

17

5
2

10

0

18

30

25

20

Ω

Ω)

Ω

Ω

(m

15

DS(ON)

R

10

5

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

VGS(Volts)

(Note E)

ID=20A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev1: Mar. 2011 www.aosmd.com Page 7 of 10

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10µs

1ms

100µs

C

10ms

10µs

1ms

100µs

C

on

P

10ms

AON6912A

10

10

VDS=15V

8

8

6

6

(Volts)

(Volts)

GS

GS

4

4

V

V

2

2

0

0

0 3 6 9 12 15 18

0 3 6 9 12 15 18

1000.0

1000.0

100.0

100.0

10.0

10.0

(Amps)

(Amps)

1.0

1.0

D

D

I

I

0.1

0.1

VDS=15V
ID=20A

ID=20A

Qg(nC)

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

R

R

DS(ON)

DS(ON)

limited

limited

Qg(nC)

T

T

J(Max)

J(Max)

DC

DC

=150°C

=150°C

1800

1800
1600

1600
1400

1400
1200

1200
1000

1000

800

800
600

600

Capacitance (pF)

Capacitance (pF)

400

400
200

200

0

0

0 5 10 15 20 25 30

0 5 10 15 20 25 30

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

200

200

160

160

120

120

80

80

Power (W)

Power (W)

40

40

VDS(Volts)

VDS(Volts)

C

C

iss

iss

T

=150°C

T

=150°C

J(Max)

J(Max)

TC=25°C

TC=25°C

C

C

oss

oss

0.0

0.0

0.01 0.1 1 10 100

0.01 0.1 1 10 100

Figure 9: Maximum Forward Biased Safe

Figure 9: Maximum Forward Biased Safe

10

D=Ton/T
T

1

R

VDS(Volts)

VDS(Volts)

Operating Area (Note F)

Operating Area (Note F)

J,PK=TC+PDM.ZθJC.RθJC

=4.2°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0

0.0001 0.001 0.01 0.1 1 10

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Figure 10: Single Pulse Power Rating Junction-to-

Pulse Width (s)

Case (Note F)

Case (Note F)

40

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJC

θ

θ

Z

Single Pulse

T

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Pulse Width (s)

Rev1: Mar. 2011 www.aosmd.com Page 8 of 10

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

on

P

100

100

TA=25°C

TA=25°C

TA=100°C

TA=100°C

TA=125°C

TA=125°C

TA=150°C

TA=150°C

(A) Peak Avalanche Current

(A) Peak Avalanche Current

AR

AR

I

I

10

10

0.000001 0.00001 0.0001 0.001

0.000001 0.00001 0.0001 0.001

Figure 12: Single Pulse Avalanche capability (Note

Figure 12: Single Pulse Avalanche capability (Note

60

60

50

50

(A)

(A)

D

D

40

40

30

30

20

20

Current rating I

Current rating I

10

10

Time in avalanche, tA(s)

Time in avalanche, tA(s)

C)

C)

AON6912A

35

35

30

30

25

25

20

20

15

15

10

10

Power Dissipation (W)

Power Dissipation (W)

5

5

0

0

0 25 50 75 100 125 150

0 25 50 75 100 125 150

Figure 13: Power De-rating (Note F)

Figure 13: Power De-rating (Note F)

10000

10000

1000

1000

100

100

Power (W)

Power (W)

10

10

T

T

CASE

CASE

(°°°°C)

(°°°°C)

TA=25°C

TA=25°C

17

10

5
2

1

0

0

0 25 50 75 100 125 150

0 25 50 75 100 125 150

Figure 14: Current De-rating (Note F)

Figure 14: Current De-rating (Note F)

10

1

T

(°°°°C)

T

(°°°°C)

CASE

CASE

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=60°C/W

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Figure 15: Single Pulse Power Rating Junction-to-

Figure 15: Single Pulse Power Rating Junction-to-

Pulse Width (s)

Pulse Width (s)

Ambient (Note G)

40

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

Single Pulse

0.001

T

T

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Pulse Width (s)

0

18

Rev1: Mar. 2011 www.aosmd.com Page 9 of 10

VDC

VDC

Rg

Rg

AON6912A

Gate Charge Test Circuit & Waveform

Gate Charge Test Circuit & Waveform

Vgs

Vgs

Qg

Qg

10V

Vds

Vds

10V

Qgs

Qgs

Qgd

Qgd

Charge

Charge

90%

90%

10%

10%

+

+

-

-

Vgs

Vgs

Ig

Ig

RL

RL

Vds

Vds

DUT

Vgs

Vgs

DUT

+

+

Vds

Vds

VDC

VDC

-

-

DUT

DUT

Resistive Switching Test Circuit & Waveforms

Resistive Switching Test Circuit & Waveforms

+

+

Vdd

Vdd

VDC

VDC

-

-

Vgs

Vds +

Vds -

Ig

Vgs

Vgs

Rg

Vgs

Isd

Vgs

Vds

Vds

Id

Id

DUT

Vgs

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

L

Vgs

+

Vdd

VDC

-

Vds

Vds

Id

t t

t t

r

r

d(on)

d(on)

t

t

on

on

E = 1/2 LI

E = 1/2 LI

AR

AR

t

t

t

t

d(off)

d(off)

t

t

off

off

2

2

AR

AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

Isd

Vds

I

F

dI/dt

rr

I

RM

f

f

BV

BV

DSS

DSS

I

AR

Vdd

Rev1: Mar. 2011 www.aosmd.com Page 10 of 10