Datasheet AO6604 Specification

20V Complementary MOSFET

D2

n-channel

p-channel

Pin1

S2

S1

1

2

3

4

5

6

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

A D

A

D2

n-channel

p-channel

Pin1

S2

S1

1

2

3

4

5

6

AO6604

General Description Product Summary

The AO6604 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R

. This device is ideal for load switch

DS(ON)

and battery protection applications.

N-Channel P-Channel

VDS= 20V -20V
ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V)
R

DS(ON)

R

DS(ON)

< 65mΩ (VGS=4.5V) < 75mΩ (VGS=-4.5V)
< 75mΩ (VGS=2.5V) < 95mΩ (VGS=-2.5V)
< 100mΩ (VGS=1.8V) < 115mΩ (VGS=-1.8V)

TSOP6

Top View Bottom View

Top View Bottom View

TSOP6

Top View

Top View

D1

G1

G1

G2

G2

A

D1

D2

D2

G1

G1

Max n-channel Max p-channel

V

DS

Gate-Source Voltage ±8 V
Continuous Drain

Current
Pulsed Drain Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

V

GS

I

D

I

DM

P

D

TJ, T

STG

2.5
13

0.7

-55 to 150

D1

D1

G2

G2

S1

S1

UnitsParameter

-20Drain-Source Voltage 20 V
±8

-2.53.4

-2

-13

1.11.1

0.7

S2

S2

A

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Rev 4: Sep 2010

Parameter Typ Max

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

78

110

106 150

64

80

www.aosmd.com

Units

°C/W
°C/W
°C/W

Page 1 of 9

t

D(off)

21

ns

Turn-Off DelayTime

R

GEN

=3

Ω

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

AO6604

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

20 V

VDS=20V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±8V
VDS=V

GS ID

=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3.4A

0.4 0.7 1 V
13 A

±100 nA

51 65

TJ=125°C 68 85
VGS=2.5V, ID=3A
VGS=1.8V, ID=2A
VDS=5V, ID=3.4A
IS=1A,VGS=0V

58 75 mΩ
68 100 mΩ
16 S

0.7 1 V

µA

mΩ

1.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

205 260 320 pF

33 48 63 pF
16 27 38 pF

1.5 3 4.5 Ω

SWITCHING PARAMETERS

Qg(4.5V) 2.9 3.8 nC
Q

gs

Q

gd

t

D(on)

t

r

Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time

VGS=4.5V, VDS=10V, ID=3.4A

VGS=5V, VDS=10V, RL=2.95Ω,

0.4 nC

0.6 nC

2.5 ns

3.2 ns

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

IF=3.4A, dI/dt=100A/µs
IF=3.4A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

3 ns

14

19 ns

3.8 nC

Rev 4: Sep 2010

www.aosmd.com

Page 2 of 9

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

V

=1.5V

125°C

25°C

125°C

V

=1.5V

16

16

4.5V

4.5V

12

12

(A)

(A)

8

8

D

D

I

I

4

4

0

0

0 1 2 3 4 5

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

2.5V

2.5V

VDS(Volts)

VDS(Volts)

2V

2V

16

16

VDS=5V

VDS=5V

12

12

8

8

(A)

(A)

D

D

I

I

4

4

0

0

0 0.5 1 1.5 2 2.5

0 0.5 1 1.5 2 2.5

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

VGS(Volts)

25°C

25°C

AO6604

120

120

100

100

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

80

80

DS(ON)

DS(ON)

R

R

60

60

40

40

0 3 6 9 12

0 3 6 9 12

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

120

100

Ω

Ω)

Ω

Ω

(m

80

DS(ON)

R

60

40

0 2 4 6 8

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS=1.8V

VGS=1.8V

VGS=2.5V

VGS=2.5V

VGS=4.5V

VGS=4.5V

ID(A)

ID(A)

Voltage (Note E)

Voltage (Note E)

VGS(Volts)

(Note E)

ID=3.4A

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8

-50 -25 0 25 50 75 100 125 150 175

-50 -25 0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

1.0E+02

1.0E+01

40

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (NoteE)

VGS=1.8V

VGS=1.8V
ID=2A

ID=2A

VGS=2.5V

VGS=2.5V
ID=3A

ID=3A

Temperature (°C)

Temperature (°C)

(Note E)

(Note E)

25°C

VSD(Volts)

VGS=4.5V

VGS=4.5V
ID=3.4A

ID=3.4A

17

5
2

10

0

18

Rev 4: Sep 2010

www.aosmd.com

Page 3 of 9

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

10µs

10s

DC

100µs

C

10µs

10s

DC

100µs

on

P

AO6604

5

5

VDS=10V

VDS=10V
ID=3.4A

ID=3.4A

4

4

3

3

(Volts)

(Volts)

GS

GS

2

2

V

V

1

1

0

0

0 1 2 3 4

0 1 2 3 4

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

100.0

100.0

10.0

10.0

R

R

DS(ON)

DS(ON)

limited

limited

1.0

1.0

(Amps)

(Amps)

D

D

I

I

0.1

0.1

T

T

J(Max)

J(Max)

TA=25°C

TA=25°C

=150°C

=150°C

Qg(nC)

Qg(nC)

1ms

1ms
10ms

10ms

400

400

300

300

200

200

Capacitance (pF)

Capacitance (pF)

100

100

1000

1000

100

100

Power (W)

Power (W)

10

10

0

0

C

C

oss

oss

0 5 10 15 20

0 5 10 15 20

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

C

C

VDS(Volts)

VDS(Volts)

iss

iss

TA=25°C

TA=25°C

1

0.0

0.0

0.01 0.1 1 10 100

0.01 0.1 1 10 100

Figure 9: Maximum Forward Biased Safe

Figure 9: Maximum Forward Biased Safe

VDS(Volts)

VDS(Volts)

Operating Area (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=150°C/W

θJA

1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

Figure 10: Single Pulse Power Rating Junction-

Pulse Width (s)

to-Ambient (Note F)

to-Ambient (Note F)

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

Pulse Width (s)

T

T

Rev 4: Sep 2010

www.aosmd.com

Page 4 of 9

AO6604

Gate Charge Test Circuit & Waveform

Gate Charge Test Circuit & Waveform

Vgs

Vgs

Qg

Qg

10V

Vds

Vds

10V

Qgs

Qgs

Qgd

Qgd

Charge

Charge

90%

90%

10%

10%

+

+

VDC

VDC

-

-

Vgs

Vgs

Ig

Ig

RL

RL

Vds

Vds

DUT

DUT

Rg

Rg

Vgs

Vgs

+

+

Vds

Vds

VDC

VDC

-

-

DUT

DUT

Resistive Switching Test Circuit & Waveforms

Resistive Switching Test Circuit & Waveforms

+

+

Vdd

Vdd

VDC

VDC

-

-

Vgs

Vds +

Vds -

Ig

Vgs

Vgs

Vgs

Rg

Isd

Vgs

Vds

Vds

Id

Id

DUT

Vgs

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

L

Vgs

+

Vdd

VDC

-

Vds

Vds

Id

t t

t t

r

r

d(on)

d(on)

t

t

on

on

E = 1/2 LI

E = 1/2 LI

AR

AR

t

t

t

t

d(off)

d(off)

t

t

off

off

2

2
AR

AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

Isd

Vds

I

F

dI/dt

rr

I

RM

f

f

BV

BV

DSS

DSS

I

AR

Vdd

Rev 4: Sep 2010

www.aosmd.com

Page 5 of 9

V

T

T

I

V

V

V

V

I

V

V

t

D(off)

53

ns

Turn-Off DelayTime

R

GEN

=6

Ω

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

AO6604

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

=-250µA, VGS=0V

D

=-20V, VGS=0V -1

DS

=55°C -5

J

-20 V

VDS=0V, VGS= ±8V

DS=VGS ID
GS
GS

GS
GS
DS

=-1A,VGS=0V

S

=-250µA
=-4.5V, VDS=-5V
=-4.5V, ID=-2.5A

=-2.5V, ID=-2A
=-1.8V, ID=-1A
=-5V, ID=-2.5A

=125°C 80 105

J

-0.4 -0.65 -1 V

-13 A
56 75

70 95 mΩ
85 115 mΩ
13 S

-0.7 -1 V

µA

±100 nA

mΩ

-1.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

560 745 pF

80 pF
70 pF
15 23 Ω

SWITCHING PARAMETERS

Qg(4.5V) 8.5 11 nC
Q

gs

Q

gd

t

D(on)

t

r

Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time

VGS=-4.5V, VDS=-10V, ID=-2.5A

VGS=-4.5V, VDS=-10V, RL=4Ω,

1.2 nC

2.1 nC

7.2 ns
36 ns

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

IF=-2.5A, dI/dt=100A/µs
IF=-2.5A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

56 ns
37 49
27

ns

nC

Rev 4: Sep 2010

www.aosmd.com

Page 6 of 9

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

-

3V

-

3.5V

125°C

-

3V

-

3.5V

25

25

20

20

15

15

(A)

(A)

D

D

-I

-I

10

10

5

5

0

0

150

150

130

130

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

110

110

(m

(m

DS(ON)

DS(ON)

R

R

-4V

-4V

-4.5V

-4.5V

VGS=-1.5V

VGS=-1.5V

0 1 2 3 4 5

0 1 2 3 4 5

-VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

90

90

70

70

50

50

0 2 4 6 8 10

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

-VDS(Volts)

VGS=-1.8V

VGS=-1.8V

-ID(A)

-ID(A)

Voltage (Note E)

Voltage (Note E)

VGS=-2.5V

VGS=-2.5V

VGS=-4.5V

VGS=-4.5V

-2.5V

-2.5V

-2V

-2V

20

20

VDS=-5V

VDS=-5V

15

15

(A)

(A)

10

10

D

D

-I

-I

5

5

0

0

0 0.5 1 1.5 2 2.5 3

0 0.5 1 1.5 2 2.5 3

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

-VGS(Volts)

VGS=-2.5V

VGS=-2.5V
ID=-2A

ID=-2A

Temperature (°C)

Temperature (°C)

25°C

25°C

VGS=-1.8V

VGS=-1.8V
ID=-1A

ID=-1A

(Note E)

(Note E)

AO6604

17

VGS=-4.5V

VGS=-4.5V

5

ID=-2.5A

ID=-2.5A

2

10

0

18

180

160

140

Ω

Ω)

Ω

Ω

120

(m

100

DS(ON)

R

80

25°C

60

40

0 2 4 6 8

Figure 5: On-Resistance vs. Gate-Source Voltage

-VGS(Volts)

125°C

(Note E)

ID=-2.5A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

-I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 4: Sep 2010

www.aosmd.com

Page 7 of 9

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

10µs

10s

C

10µs

10s

on

P

5

5

VDS=-10V

VDS=-10V
ID=-2.5A

ID=-2.5A

4

4

3

3

(Volts)

(Volts)

GS

GS

2

2

-V

-V

1

1

0

0

0 2 4 6 8 10

0 2 4 6 8 10

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

100.0

100.0

10.0

(Amps)

(Amps)

-I

-I

10.0

D

D

1.0

1.0

0.1

0.1

R

R

DS(ON)

DS(ON)

limited

limited

T

T
TA=25°C

TA=25°C

J(Max)

J(Max)

Qg(nC)

Qg(nC)

=150°C

=150°C

100µs

100µs
1ms

1ms
10ms

10ms

1400

1400

1200

1200

1000

1000

800

800

600

600

Capacitance (pF)

Capacitance (pF)

400

400

200

200

0

0

0 5 10 15 20

0 5 10 15 20

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

1000

1000

100

100

Power (W)

Power (W)

10

10

C

C

oss

oss

C

C

iss

iss

-VDS(Volts)

-VDS(Volts)

AO6604

TA=25°C

TA=25°C

0.0

0.0

0.01 0.1 1 10 100

0.01 0.1 1 10 100

Figure 9: Maximum Forward Biased Safe

Figure 9: Maximum Forward Biased Safe

10

D=Ton/T
T

1

R

-VDS(Volts)

-VDS(Volts)

Operating Area (Note F)

Operating Area (Note F)

J,PK=TA+PDM.ZθJA.RθJA

=150°C/W

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

Figure 10: Single Pulse Power Rating Junction-

Pulse Width (s)

to-Ambient (Note F)

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

Single Pulse

T

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Pulse Width (s)

Rev 4: Sep 2010

www.aosmd.com

Page 8 of 9

-

Rg

Rg

VDC

VDC

AO6604

Gate Charge Test Circuit & Waveform

Gate Charge Test Circuit & Waveform

Vgs

Vgs

Qg

Qg

-

-

-

+

+

DUT

DUT

Vgs

Vgs

Ig

Ig

RL

RL

Vds

Vds

DUT

Vgs

Vgs

DUT

-

Vds

Vds

VDC

VDC

+

+

Resistive Switching Test Circuit & Waveforms

Resistive Switching Test Circuit & Waveforms

-

-

Vdd

Vdd

VDC

VDC

+

+

Vgs

Vgs

-10V

-10V

t t

t t

d(on)

d(on)

Qgd

Qgs

Qgs

t

t

on

on

r

r

Qgd

Charge

Charge

t

t

off

off

t

t

t

t

d(off)

d(off)

f

f

90%

90%

Vgs

Vgs

Vgs

Vds +

Vds -

Ig

Vgs

Rg

Isd

Vgs

Vds

Vds

Id

Id

DUT

Vds

Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

L

Vgs

Vgs

VDC

­+

Vdd

E = 1/2 LI

E = 1/2 LI

AR

AR

Vds

Vds

Id

2

2

AR

AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

-Isd

-Vds

-I

F

dI/dt

rr

-I

RM

I

Vdd

10%

10%

BV

BV

AR

DSS

DSS

Rev 4: Sep 2010

www.aosmd.com

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