Page 1
Symbol
Symbol
Typ
Max
A
A
B
Absolute Maximum Ratings T
=25°C unless otherwise noted
AO6414
V
1
2
3
4
5
6
Pin1
55V N-Channel MOSFET
General Description
The AO6414 uses advanced trench technology to
provide excellent R
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch.
TSOP6
Top View Bottom View
and low gate charge. It
DS(ON)
D
D D
G
Top View
Product Summary
(V) = 55V
DS
ID = 2.4A (V
R
R
< 160mΩ (VGS = 4.5V)
DS(ON)
< 200mΩ (VGS = 2.5V)
DS(ON)
D
S
= 4.5V)
GS
G
D
S
A
Parameter Maximum Units
Drain-Source Voltage 55 V
Gate-Source Voltage ±12 V
Continuous Drain
Current
A
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
2.3
1.9
9
1.56
1.1
A
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
58 80
94 120
37 50
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AO6414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=10mA, VGS=0V
VDS=44V, VGS=0V
VDS=0V, VGS=±12V
VDS=V
GS ID
=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=2.4A
VGS=2.5V, ID=1.5A
VDS=5V, ID=2.4A
IS=1A
55 V
0.002 1
TJ=55°C 5
±100 nA
0.6 1.3 2 V
10 A
125 160
TJ=125°C 175 210
157 200 mΩ
11 S
0.78 1 V
1.9 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
214 300 pF
31 pF
12.6 pF
1.3 3 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=4.5V, VDS=25V, ID=2.4A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=25V, RL=10.4Ω,
R
=3Ω
GEN
Turn-Off Fall Time
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
IF=2.4A, dI/dt=100A/µs
IF=2.4A, dI/dt=100A/µs
2.6 3.3 nC
0.6 nC
0.8 nC
2.3 ns
2.4 ns
16.5 ns
2 ns
20 30
ns
17 nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev1: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
Page 3
AO6414
10V
25°C
125°C
125°C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4.5V
8
3.5V
2.5V
6
(A)
D
I
4
2
VGS=2V
0
0 1 2 3 4 5
VDS (Volts)
Fig 1: On-Region Characteristics
200
180
)
Ω
Ω
Ω
Ω
160
VGS=2.5V
(m
140
DS(ON)
R
VGS=4.5V
120
100
0 1 2 3 4 5
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
8
VDS=5V
6
4
(A)
D
I
2
25°C
0
1 1.25 1.5 1.75 2 2.25 2.5
V
GS(Volts)
Figure 2: Transfer Characteristics
2
1.8
VGS=4.5V, 2.4A
1.6
1.4
VGS=2.5V,1.5A
1.2
Normalized On-Resistance
1
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
350
ID=2.4A
300
250
)
Ω
Ω
Ω
Ω
(m
200
DS(ON)
R
150
25°C
100
50
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
125°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
Page 4
AO6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
rss
100µs
10ms
1ms
0.1s
1s
10s
DC
limited
T
on
T
P
5
VDS=25V
4
ID=2.4A
3
(Volts)
GS
2
V
1
0
0 1 2 3
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
10.00
R
DS(ON)
10µs
1.00
(Amps)
D
I
0.10
T
=150°C
J(Max)
TA=25°C
0.01
0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
400
350
300
C
250
iss
200
150
Capacitance (pF)
100
C
oss
C
50
0
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
20
T
=150°C
15
J(Max)
TA=25°C
10
Power (W)
5
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=80°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
JA
θ
θ
θ
θ
Z
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Page 5
Page 6
Loading...